SST2622
Abstract: d265
Text: SST2622 520m 0 A, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2622 utiltzed advance processing techniques to achieve the lowest 0.45 REF 0.60 REF 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.
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Original
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PDF
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SST2622
520mA,
OT-26
90REF
95REF
SST2622
OT-26
15-Jun-2010
d265
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Untitled
Abstract: No abstract text available
Text: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.
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Original
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PDF
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SST2622
520mA,
OT-26
37Ref.
SST2622
OT-26
20Ref.
01-Jun-2002
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