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    Abstract: No abstract text available
    Text: STT2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.


    Original     		STT2622 520mA, STT2622 OT-26 01-Jun-2002 PDF