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    51L2200

    Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
    Text: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.


    Original     		51L2800 5SYA1103-01 51L2600 51L2200 CH-5600 51L2200 IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb PDF

    5SDD51L2200

    Abstract: k 175 parameters
    Text: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current


    OCR Scan     		51L2800 51L2800 51L2600 51L2200 5SYA1103 CH-5600 5SDD51L2200 k 175 parameters PDF