51L2200
Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
Text: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.
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51L2800
5SYA1103-01
51L2600
51L2200
CH-5600
51L2200
IGCT
ABB 5STP 5SDD
igct abb
51L2800
high power igct abb
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V mΩ 5SDD 51L2800 Doc. No. 5SYA1103-01 Feb. 05 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.
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Original
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PDF
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51L2800
5SYA1103-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.
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Original
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PDF
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51L2800
5SYA1103-02
CH-5600
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