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    Qualtek Electronics Corporation FDD1-17251DBMW33

    FAN AXIAL 172X51MM 24VDC WIRE
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    Qualtek Electronics Corporation FDD1-17251DBMW3C

    FAN AXIAL 172X51MM 24VDC WIRE
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    Qualtek Electronics Corporation FDD1-17251DBMW39

    FAN AXIAL 172X51MM 24VDC WIRE
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    Qualtek Electronics Corporation FDD1-17251DBMW32

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    Qualtek Electronics Corporation FDD1-17251DBMW39-L

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    51DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN6487

    Abstract: BX6487 FP6487 TM6487
    Text: Available as: RF AMPLIFIER MODEL TM6487 TM6487, 4 Pin TO-8 T4 TN6487, 4 Pin Surface Mount (SM3) FP6487, 4 Pin Flatpack (FP4) BX6487, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51dBm (Typ.)


    Original     		PDF TM6487 TM6487, TN6487, FP6487, BX6487, 51dBm TN6487 BX6487 FP6487 TM6487

    Untitled

    Abstract: No abstract text available
    Text: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


    Original     		PDF WJA1505 51dBm OT-89 WJA1505 1-800-WJ1-4401

    JDSU ETX 500

    Abstract: JDSU ETX 75 JDSU ETX 100 0603CS LTC2208 LTC6400 LTC6400CUD-26 LTC6400IUD-26 LTC6401
    Text: LTC6400-26 1.9GHz Low Noise, Low Distortion Differential ADC Driver for DC-300MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.9GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)


    Original     		PDF LTC6400-26 DC-300MHz 94dBc 70MHz 51dBm) 71dBc 300MHz 255mW) 16-Lead LT6600-5 JDSU ETX 500 JDSU ETX 75 JDSU ETX 100 0603CS LTC2208 LTC6400 LTC6400CUD-26 LTC6400IUD-26 LTC6401

    EGNC105MK

    Abstract: No abstract text available
    Text: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 51dBm EGNC105MK -j100 EGNC105MK

    Untitled

    Abstract: No abstract text available
    Text: EGNC105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 51dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 20dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNC105MK 51dBm 25deg

    132-60 wj 70

    Abstract: MARKING A1505 A1505 JESD22-A114 WJA1505 WJA1505-PCB
    Text: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


    Original     		PDF WJA1505 51dBm OT-89 WJA1505 1-800-WJ1-4401 132-60 wj 70 MARKING A1505 A1505 JESD22-A114 WJA1505-PCB

    Untitled

    Abstract: No abstract text available
    Text: LTC6400-20 1.8GHz Low Noise, Low Distortion Differential ADC Driver for 300MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.8GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)


    Original     		PDF LTC6400-20 300MHz 94dBc 70MHz 51dBm) 65dBc 300MHz 270mW) 16-Lead LT6600-5

    Untitled

    Abstract: No abstract text available
    Text: LT6402-20 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 20dB DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 300 MHz –3dB Bandwidth Fixed Gain of 20dB Low Distortion: 51dBm OIP3, –81dBc HD3 (20MHz, 2VP-P) Low Noise:


    Original     		PDF LT6402-20 300MHz 51dBm 81dBc 20MHz, 20MHz) 16-Lead 300MHz. LT6402-20 LT6600-20

    Untitled

    Abstract: No abstract text available
    Text: LTC6400-26 1.9GHz Low Noise, Low Distortion Differential ADC Driver for DC-300MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.9GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)


    Original     		PDF LTC6400-26 DC-300MHz 94dBc 70MHz 51dBm) 71dBc 300MHz 255mW) 16-Lead LT6600-5

    EGNC105MK

    Abstract: hemt 105w JESD22-A114 0 280 130 094
    Text: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNC105MK 51dBm Dissi11 EGNC105MK hemt 105w JESD22-A114 0 280 130 094

    bandpass filter f center 20MHz group

    Abstract: LTC6400 LTC6400 LCCS LTC2208 LTC6400CUD-20 LTC6401 LTC6401-20
    Text: LTC6400-20 1.8GHz Low Noise, Low Distortion Differential ADC Driver for 300MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.8GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)


    Original     		PDF LTC6400-20 300MHz 94dBc 70MHz 51dBm) 65dBc 300MHz 270mW) 16-Lead LT6600-5 bandpass filter f center 20MHz group LTC6400 LTC6400 LCCS LTC2208 LTC6400CUD-20 LTC6401 LTC6401-20

    Untitled

    Abstract: No abstract text available
    Text: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


    Original     		PDF WJA1505 WJA1505 OT-89 51dBm

    AM000551SF-2H

    Abstract: amcomusa
    Text: High Power Amplifier Module 30 – 500MHz, 26dB, 125 Watts AM000551SF-2H April 2010 Rev 3 DESCRIPTION AM000551SF-2H is a Broadband High Power Amplifier designed for high power RF applications. It operates from 30MHz to 500MHz and typically delivers 51dBm CW output power and 28dB small signal gain. The amplifier


    Original     		PDF 500MHz, AM000551SF-2H AM000551SF-2H 30MHz 500MHz 51dBm 500MHz 51dBm, 28VDC amcomusa

    AM091251SF-1H

    Abstract: No abstract text available
    Text: High Power Amplifier Module 0.95 – 1.25GHz, 10dB, 125 Watts AM091251SF-1H April 2010 Rev 2 DESCRIPTION AMCOM’s AM091251SF-1H is a Broadband Power Amplifier designed for high power microwave applications. It operates from 950MHz to 1250MHz and typically delivers 51dBm CW output power and 10dB gain small signal .


    Original     		PDF 25GHz, AM091251SF-1H AM091251SF-1H 950MHz 1250MHz 51dBm 1250MHz 51dBm, 31VDC

    LA4550 equivalent

    Abstract: LA4550
    Text: Ordering number:ENN1718B Monolithic Linear IC LA4550 2-Channel AF Power Amplifier for Radio, Tape Recorder Use Features Package Dimensions • Low quiescent current. • On-chip 2 channels permitting use in stereo and bridge amplifier applications. • High output.


    Original     		PDF ENN1718B LA4550 022A-DIP12F LA4550] 26max 51min LA4550 equivalent LA4550

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    KESTX01

    Abstract: KESTX02
    Text: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a


    Original     		PDF KESTX01/KESTX02 900MHz AN4807 KESTX01 KESTX02 290-470MHz 900MHz KESTX01

    56F8037

    Abstract: MC56F8037 CH1837A BSS 97 NV 15F v.8bis XE0092 56F8323 56F8346 56F8357
    Text: Freescale Semiconductor Application Note Document Number: AN3607 Rev. 0, 4/2008 A Low-Cost Soft Modem Using the Freescale Digital Signal Controller MC56F802x/3x Series Using On-Chip ADC and DAC by: John L. Winters Systems and Applications Engineering Tempe, Arizona, USA


    Original     		PDF AN3607 MC56F802x/3x 22bis 56F802x/3x 56F8037 MC56F8037 CH1837A BSS 97 NV 15F v.8bis XE0092 56F8323 56F8346 56F8357

    LTC 1993

    Abstract: ETC1-1-13 LT1993-4 LT1993CUD-4 LT1993IUD-4 LTC2255
    Text: LT1993-4 900MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 4V/V DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1993-4 is a low distortion, low noise Differential Amplifier/ADC driver for use in applications from DC to


    Original     		PDF LT1993-4 900MHz 900MHz. LT1993-4 12bit 14-bit 175MHz 47dBm LTC 1993 ETC1-1-13 LT1993CUD-4 LT1993IUD-4 LTC2255

    sigma sc30

    Abstract: STMicroelectronics supressor ST75C530 ST75C530FP-A ST75C540 ST75C540FP-A T104 TQFP80 wiring diagram echo microphone schematics analog satellite receiver
    Text: ST75C530 ST75C540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNET & POTS LINES SUMMARIZED FEATURES for detailed features, see page 4 . . . . . . . . SINGLE CHIP FAX Up to 14.4Kbps (V.17) FULL DUPLEX DATA MODEM UP TO


    Original     		PDF ST75C530 ST75C540 32Bis) 16Kbps 650mW ST75C530xpress sigma sc30 STMicroelectronics supressor ST75C530 ST75C530FP-A ST75C540 ST75C540FP-A T104 TQFP80 wiring diagram echo microphone schematics analog satellite receiver

    1000 watt amplifier

    Abstract: 1000 watts power amp AD8362 RF power amplifier MHz 2 Watt rf Amplifier
    Text: Model SM08010-51LD 800 - 1000 MHz 120 Watt Power Amplifier The SM08010-51LD is an 800-1000 MHz LDMOS amplifier designed for various military and commercial applications. Features • • • Mis-Match Protected with BuiltIn Isolator Single Power Supply Temperature Compensation


    Original     		PDF SM08010-51LD SM08010-51LD AD8362 40dBm 51dBm 1000 watt amplifier 1000 watts power amp RF power amplifier MHz 2 Watt rf Amplifier

    LA4550

    Abstract: No abstract text available
    Text: Ordering number:ENN1718B Monolithic Linear IC LA4550 2-Channel AF Power Amplifier for Radio, Tape Recorder Use Features Package Dimensions • Low quiescent current. • On-chip 2 channels permitting use in stereo and bridge amplifier applications. • High output.


    Original     		PDF ENN1718B LA4550 022A-DIP12F LA4550] 26max 51min DIP12F LA4550

    autobaud

    Abstract: 1E97 0C00 B103 ST18933 ST75C502
    Text: APPLICATION NOTE ST75C502 - RAM MAPPING By William GLASS CONTENTS Page I INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 II ECHO CANCELLER V.32bis only . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF ST75C502 32bis autobaud 1E97 0C00 B103 ST18933

    Common PCN Handset Specification Phase 2 v4.2

    Abstract: sim 300 GSM MODEM AT commands sim 300s gsm modem datasheet SMS controlled LED based scrolling message display sim card chips sim 300s gsm modem 3g call flow str 630 msc gsm MC75 siemens
    Text: Multi-Tech Wireless EDGE Modem AT Commands Reference Guide Copyright and Technical Support AT Commands for Multi-Tech EDGE Modems Reference Guide PN S000371A, Revision A Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from


    Original     		PDF S000371A, S000371A) Common PCN Handset Specification Phase 2 v4.2 sim 300 GSM MODEM AT commands sim 300s gsm modem datasheet SMS controlled LED based scrolling message display sim card chips sim 300s gsm modem 3g call flow str 630 msc gsm MC75 siemens