TLWW9600
Abstract: No abstract text available
Text: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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TLWW9600
D-74025
22-Apr-03
TLWW9600
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TLWW9900
Abstract: No abstract text available
Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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TLWW9900
D-74025
22-Apr-03
TLWW9900
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Untitled
Abstract: No abstract text available
Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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Original
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TLWW9900
D-74025
18-Feb-04
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Untitled
Abstract: No abstract text available
Text: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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TLWW9600
D-74025
23-Feb-04
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Untitled
Abstract: No abstract text available
Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMW3146
TLMW3146
CIE1931
55ake
D-74025
18-Jun-04
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Untitled
Abstract: No abstract text available
Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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Original
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TLWW9900
D-74025
23-Feb-04
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TLWW8600
Abstract: No abstract text available
Text: TLWW8600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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Original
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TLWW8600
D-74025
22-Apr-03
TLWW8600
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PDF
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Untitled
Abstract: No abstract text available
Text: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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TLWW8900
D-74025
25-Feb-04
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Untitled
Abstract: No abstract text available
Text: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.
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TLWW8900
D-74025
22-Apr-03
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smd 41B
Abstract: No abstract text available
Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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Original
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TLMW3146
TLMW3146
CIE1931
55ake
D-74025
03-May-04
smd 41B
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2SC4764
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display
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2SC4764
2SC4764
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch
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OCR Scan
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MSM51C256A
144-Word
144-w
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c 2316
Abstract: No abstract text available
Text: O K I semiconductor MSC2316-xxYS9 262,144 BY 9 BIT DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e Oki M S C 2316-xxY S 9 is a fully decoded, 262,144 word x 9 bit C M O S dynam ic random access memory com posed of nine 2 5 6 K D R A M s in plastic leaded chip carrier M SM 51C 256JS . T h e mounting
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OCR Scan
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MSC2316-xxYS9
2316-xxY
256JS)
256JS;
c 2316
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TPC 8406
Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
Text: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast
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OCR Scan
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HY51C1000
M131202A-SEP90
HY51C1000
576X1
002-A
K29793/4
K23955/6
TPC 8406
HY51C1000-12
HY51C1000-10
RM1410
W777777
29793
83464
hyundai chip id
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PDF
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20 mf 25 metal rectifier diode
Abstract: 2N6277 equivalent 1N5817 2N2222 2N6277 MBR1020 MBR1035 MBR1045 2N22220
Text: 6367255 MOTOROLA SC 51C D I O D E S /OPTO ;t3t?aSS 005753fl 57538 î - /7 I MOTOROLA M B R 1 0 2 0 M B R 1 0 3 5 SEM IC O N D U C TO R S M B R I0 4 5 P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 n a y SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S
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OCR Scan
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005753fl
MBR1020
MBR1035
MBR1045
221B-01
O-220AC
MBR1045
2N6277
20 mf 25 metal rectifier diode
2N6277 equivalent
1N5817
2N2222
2N6277
2N22220
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FZJ 131
Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
Text: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The
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OCR Scan
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OD04143
MSM51C256RS/JS
MSM51C256
DIP/18
MSM51C256-8
MSM51C256-10
FZJ 131
BE454
MSM51C256-12
MSM51C256RS
L262144
dynamic ram binary cell
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specification IC 741C
Abstract: No abstract text available
Text: TMS320C240, TMS320F240 DSP CONTROLLERS S PR S 042A-O C TO BER 1996-R E V IS E D DECEMBER 1997 • • • High-Performance Static CMOS Technology Includes the T320C2xLP Core CPU - Object Com patible With the TMS320C2xx - Source Code Compatible With TMS320C25
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OCR Scan
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TMS320C240,
TMS320F240
42A-O
1996-R
XDS510TM)
TMS320C240
TMS320C2xx
16-bit
specification IC 741C
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PDF
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75W HI FI AMPLIFIER
Abstract: SC54B 2SC54b S-059
Text: D E J| c]Qcì7SSD OGOlñST 1 iñ TOSHIBA {D ISCRETE/ OPTO } 39C 0 1 8 5 9 , SEMICONDUCTOR D T " 3 3 -Ö TOSHIBA TRANSISTOR 2 SC54B ^ 2 S I L I C O N NPN E P I T A X I A L TECHNICAL DATA » P LANAR fi I * ffl IN D U S T R IA L A P P L IC A T IO N S O VHF * * * <S ffl
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OCR Scan
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SC54B
100mA
150mA
250mA
400MHZ
175MKI
75W HI FI AMPLIFIER
SC54B
2SC54b
S-059
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM51C464A 65,536-Word x 4-Bit DYNAMIC RÀM GENERAL DESCRIPTION T h e M S M 5 1 C 4 6 4 A is a n e w g e n e ra tio n d y n a m ic R A M o rg a n iz e d a s 6 5 .5 3 6 -w o rd x 4 -b it. T h e te c h n o lo g y u s e d to fa b ric a te th e M S M 5 1 C 4 6 4 A is O K I’s C M O S s ilic o n g a te p ro c e s s te c h n o l
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OCR Scan
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MSM51C464A
536-Word
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PDF
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18-PIN
Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
Text: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The
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OCR Scan
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MSM51C464A
536-Word
MSM51C464A
256cycles/4ms
18-Pin
300mil
b72M240
20-PIN
MSM51C464A-10
MSM51C464A-70
MSM51C464A-80
ZIP20-P-400
msm51c464
DD177
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PDF
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MG10G6EL2
Abstract: No abstract text available
Text: "TG TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE I T t m s s o D D G lb n S a | ~ 90D 16195 D TOSHIBA GTR MODULE MG10G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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OCR Scan
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MG10G6EL2
EGA-MG10G6EL2-1
EGA-MG10G6EL2-4
MG10G6EL2
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PDF
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a22t
Abstract: No abstract text available
Text: TOSHIBA SEMICONDUCTOR TOSHIBA LED LAMP T LRAG 2 9 6 t e c h n ic a l d a t a GaA l A s RE D / G a P G r e e n L I G H T E M I S S I O N TENTATIVE DUAL COLOR PANEL CIRCUIT INDICATOR 5mm DIAMETER Tl-3/4 FE A T U R E S . H igh Bri g h t D u a l C o l o r Emi s s i o n
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OCR Scan
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TLRAG296
a22t
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PDF
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