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    51C SEMICONDUCTOR Search Results

    51C SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    51C SEMICONDUCTOR Price and Stock

    Diotec Semiconductor AG TGL34-51C

    TVS Diode - MiniMelf - 41.3V - 150W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL34-51C
    • 1 -
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    • 10000 $0.0409
    		Buy Now

    Diotec Semiconductor AG TGL41-51C

    TVS Diode - Melf - 41.3V - 400W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL41-51C
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0442
    		Buy Now

    51C SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TLWW9600

    Abstract: No abstract text available
    Text: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW9600 D-74025 22-Apr-03 TLWW9600

    TLWW9900

    Abstract: No abstract text available
    Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW9900 D-74025 22-Apr-03 TLWW9900

    Untitled

    Abstract: No abstract text available
    Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW9900 D-74025 18-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW9600 D-74025 23-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a


    Original     		PDF TLMW3146 TLMW3146 CIE1931 55ake D-74025 18-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW9900 D-74025 23-Feb-04

    TLWW8600

    Abstract: No abstract text available
    Text: TLWW8600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW8600 D-74025 22-Apr-03 TLWW8600

    Untitled

    Abstract: No abstract text available
    Text: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW8900 D-74025 25-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.


    Original     		PDF TLWW8900 D-74025 22-Apr-03

    smd 41B

    Abstract: No abstract text available
    Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a


    Original     		PDF TLMW3146 TLMW3146 CIE1931 55ake D-74025 03-May-04 smd 41B

    2SC4764

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display


    Original     		PDF 2SC4764 2SC4764

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch ­


    OCR Scan     		PDF MSM51C256A 144-Word 144-w

    c 2316

    Abstract: No abstract text available
    Text: O K I semiconductor MSC2316-xxYS9 262,144 BY 9 BIT DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e Oki M S C 2316-xxY S 9 is a fully decoded, 262,144 word x 9 bit C M O S dynam ic random access memory com posed of nine 2 5 6 K D R A M s in plastic leaded chip carrier M SM 51C 256JS . T h e mounting


    OCR Scan     		PDF MSC2316-xxYS9 2316-xxY 256JS) 256JS; c 2316

    TPC 8406

    Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
    Text: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast


    OCR Scan     		PDF HY51C1000 M131202A-SEP90 HY51C1000 576X1 002-A K29793/4 K23955/6 TPC 8406 HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id

    20 mf 25 metal rectifier diode

    Abstract: 2N6277 equivalent 1N5817 2N2222 2N6277 MBR1020 MBR1035 MBR1045 2N22220
    Text: 6367255 MOTOROLA SC 51C D I O D E S /OPTO ;t3t?aSS 005753fl 57538 î - /7 I MOTOROLA M B R 1 0 2 0 M B R 1 0 3 5 SEM IC O N D U C TO R S M B R I0 4 5 P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 n a y SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S


    OCR Scan     		PDF 005753fl MBR1020 MBR1035 MBR1045 221B-01 O-220AC MBR1045 2N6277 20 mf 25 metal rectifier diode 2N6277 equivalent 1N5817 2N2222 2N6277 2N22220

    FZJ 131

    Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
    Text: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF OD04143 MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 FZJ 131 BE454 MSM51C256-12 MSM51C256RS L262144 dynamic ram binary cell

    specification IC 741C

    Abstract: No abstract text available
    Text: TMS320C240, TMS320F240 DSP CONTROLLERS S PR S 042A-O C TO BER 1996-R E V IS E D DECEMBER 1997 • • • High-Performance Static CMOS Technology Includes the T320C2xLP Core CPU - Object Com patible With the TMS320C2xx - Source Code Compatible With TMS320C25


    OCR Scan     		PDF TMS320C240, TMS320F240 42A-O 1996-R XDS510TM) TMS320C240 TMS320C2xx 16-bit specification IC 741C

    75W HI FI AMPLIFIER

    Abstract: SC54B 2SC54b S-059
    Text: D E J| c]Qcì7SSD OGOlñST 1 iñ TOSHIBA {D ISCRETE/ OPTO } 39C 0 1 8 5 9 , SEMICONDUCTOR D T " 3 3 -Ö TOSHIBA TRANSISTOR 2 SC54B ^ 2 S I L I C O N NPN E P I T A X I A L TECHNICAL DATA » P LANAR fi I * ffl IN D U S T R IA L A P P L IC A T IO N S O VHF * * * <S ffl


    OCR Scan     		PDF SC54B 100mA 150mA 250mA 400MHZ 175MKI 75W HI FI AMPLIFIER SC54B 2SC54b S-059

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C464A 65,536-Word x 4-Bit DYNAMIC RÀM GENERAL DESCRIPTION T h e M S M 5 1 C 4 6 4 A is a n e w g e n e ra tio n d y n a m ic R A M o rg a n iz e d a s 6 5 .5 3 6 -w o rd x 4 -b it. T h e te c h n o lo g y u s e d to fa b ric a te th e M S M 5 1 C 4 6 4 A is O K I’s C M O S s ilic o n g a te p ro c e s s te c h n o l­


    OCR Scan     		PDF MSM51C464A 536-Word

    18-PIN

    Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
    Text: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF MSM51C464A 536-Word MSM51C464A 256cycles/4ms 18-Pin 300mil b72M240 20-PIN MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177

    MG10G6EL2

    Abstract: No abstract text available
    Text: "TG TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE I T t m s s o D D G lb n S a | ~ 90D 16195 D TOSHIBA GTR MODULE MG10G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG10G6EL2 EGA-MG10G6EL2-1 EGA-MG10G6EL2-4 MG10G6EL2

    a22t

    Abstract: No abstract text available
    Text: TOSHIBA SEMICONDUCTOR TOSHIBA LED LAMP T LRAG 2 9 6 t e c h n ic a l d a t a GaA l A s RE D / G a P G r e e n L I G H T E M I S S I O N TENTATIVE DUAL COLOR PANEL CIRCUIT INDICATOR 5mm DIAMETER Tl-3/4 FE A T U R E S . H igh Bri g h t D u a l C o l o r Emi s s i o n


    OCR Scan     		PDF TLRAG296 a22t