SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
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KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
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14Q7
Abstract: No abstract text available
Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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K3P4C1000D-D
/512Kx16)
100ns
K3P4C1000D-DC
42-DIP-600
K3P4C1000D-GC
44-SOP-600
K3P4C1000DD
14Q7
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29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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Untitled
Abstract: No abstract text available
Text: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501
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WE512K16-XG4X
512Kx16
200ns
128Kx16
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
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Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
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WSF2816-39XX
128Kx16
512Kx16
WSF2816-39G2UX
WSF2816-39H1X
ICCx16
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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FM23MLD16
Abstract: 3.3v 1Mx8 static ram high speed
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz
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FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
3.3v 1Mx8 static ram high speed
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Untitled
Abstract: No abstract text available
Text: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001
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HY62SF16806A
512Kx16bit
HYSF6806A
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kor 2001
Abstract: No abstract text available
Text: HY62LF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release Draft Date Remark May.29.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
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HY62LF16804B
512Kx16bit
16bits.
HYLF6804B
100ns
00/May.
kor 2001
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Untitled
Abstract: No abstract text available
Text: K6T8016C3M Family CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 18, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from
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K6T8016C3M
512Kx16
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Untitled
Abstract: No abstract text available
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F800SG 8M 512Kx16 Smart Voltage
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LH28Fxxx
LH28F800SG
512Kx16)
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Untitled
Abstract: No abstract text available
Text: HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary
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HY62UF16804A
512Kx16bit
HY62UF16803A
HY62UF16804A
ChanY62UF16804A
HYUF6804A
10/Jan.
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HY29F800T
Abstract: PSOP 44 Pattern HY29F800B
Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800
1Mx8/512Kx16)
HY29F800T
PSOP 44 Pattern
HY29F800B
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SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
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WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
WSF512K16-XG2X
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Untitled
Abstract: No abstract text available
Text: K3N4V U 1000D-TC(E) CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)
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1000D-TC
/512Kx16)
100ns
120ns
44-TSOP2-400
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HYSF6804A
Abstract: HY62SF16804A HY62SF16804A-C HY62SF16804A-I
Text: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary
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HY62SF16804A
512Kx16bit
HY62QF16803A
HY62QF16804A
Prelimi2SF16804A
HYSF6804A
HYSF6804A
HY62SF16804A-C
HY62SF16804A-I
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
44-TSQP2-400
KM23V8100DET
KM23V8100DT
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)
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WSF512K16-XXX
512Kx16SRAM
120ns
120ns
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FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
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WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
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