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    1000AL Search Results

    1000AL Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    10018783-11000ALF Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Through Hole, x1, 36 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
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    1000AL Price and Stock

    TDK Corporation FS1406-1000-AL

    DC DC CONVERTER 1V
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    DigiKey FS1406-1000-AL Digi-Reel 2,444 1
    • 1 $6.67
    • 10 $5.715
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    • 1000 $3.78216
    • 10000 $3.54403
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    FS1406-1000-AL Cut Tape 2,444 1
    • 1 $6.67
    • 10 $5.715
    • 100 $6.67
    • 1000 $3.78216
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    Avnet Americas FS1406-1000-AL Reel 10 Weeks 4,000
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    Mouser Electronics FS1406-1000-AL 2,978
    • 1 $5.76
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    • 100 $4.73
    • 1000 $3.79
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    TTI FS1406-1000-AL Reel 4,000
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    Avnet Abacus FS1406-1000-AL 25 Weeks 4,000
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    Globetek Inc WR9HE1000ALTW-F(R6B)

    AC/DC WALL MOUNT ADAPTER 12V 12W
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    DigiKey WR9HE1000ALTW-F(R6B) Bulk 1,036 1
    • 1 $19.96
    • 10 $19.96
    • 100 $17.764
    • 1000 $17.054
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    RAF Electronic Hardware 1100-0-AL

    1/8 RD X 1/8 X .064 ID
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    DigiKey 1100-0-AL Bulk 811 1
    • 1 $0.44
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    Mouser Electronics 1100-0-AL 486
    • 1 $0.36
    • 10 $0.288
    • 100 $0.248
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    Newark 1100-0-AL Bulk 6,791 736
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    DB Roberts 1100-0-AL
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    Master Electronics 1100-0-AL
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    • 1000 $0.2076
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    Zaber Technologies Inc X-LRT1000AL-E08C-KX14N

    Linear Stage 1000mm Fpitch
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    DigiKey X-LRT1000AL-E08C-KX14N Ammo Pack 5 1
    • 1 $6034.6
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    Z-Communications Inc CRO1000A-LF

    VCO Frequency 1000 MHz - 1000 MH
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    DigiKey CRO1000A-LF 1
    • 1 $34.95
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    • 100 $32.95
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    1000AL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight 1000AL devices.


    OCR Scan     		PDF MB98B7514 MB814400AL MB81C1000AL 88-pin 18-bit 36-bit MB98B7514-80 CRD-88P-M01)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K 1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.


    OCR Scan     		PDF KM44C1000AL KM44C1OOOAL 130ns OOOAL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


    OCR Scan     		PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    hyb511000a

    Abstract: HYB511000 511000a HYB511000AL
    Text: B aeiSbGS GGS037b 5 Ó S I E G SIEMENS AKTIENGESELLSCHAF 47E D * T - Lf £ ' Z 3 * fS HYB 1000AL-60/-70 1M x 1-Bit Dynamic RAM Low Power Version Advance Information • 1 048 576 x 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time (HYB 1000AL-60)


    OCR Scan     		PDF GGS037b 511000AL-60/-70 511000AL-60) HYB511Q0QAL-70) cycles/64 P-DIP-18-T 1000AL P-SOJ-26/20 511000AJL P-ZIP-20/19 hyb511000a HYB511000 511000a HYB511000AL

    km44c1000alt

    Abstract: KM44C1000AL-10 samsung hv capacitor
    Text: 1000AL CM OS DRAM 1 M X 4 B it C M OS Dynam ic R A M with F ast Page M ode FEATURES • GENERAL DESCRIPTION P e rfo rm a n c e range: tRAC ¡ tcAC K M 44C 1 000A L- 7 70ns 2 0 ns 13 0n s KM 44C 1 000A L- 8 80ns 2 0 ns 150ns K M 4 4 C 1 0 0 0 A L -1 0


    OCR Scan     		PDF KM44C1000AL KM44C1 KM44C1000AL-10 100ns 130ns 150ns 180ns cycles/128ms 70/80/100ns) km44c1000alt KM44C1000AL-10 samsung hv capacitor

    hall 04E

    Abstract: dar PLUS transformer shaded pole motor TROUBLESHOOTING GUIDE PD GTO gate drive unit mitsubishi 630F660 lug ucm m4 semiconductors cross index DMS 800 cabinet mitsubishi dc motor crane GTO gate drive unit westcode
    Text: aUEH-BRADLEÏ B„He«n1352C-5.3SV*«em M anual Installation a n d M a in t e n a a c e »»B » iatkilri8Bi fes'#* M M m ^^ !!!!#^ Important User Information Because of the variety of uses for this equipment and because of the


    OCR Scan     		PDF 1352C-5 hall 04E dar PLUS transformer shaded pole motor TROUBLESHOOTING GUIDE PD GTO gate drive unit mitsubishi 630F660 lug ucm m4 semiconductors cross index DMS 800 cabinet mitsubishi dc motor crane GTO gate drive unit westcode

    N42C

    Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
    Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A


    OCR Scan     		PDF N41256A 1256A N41257A-08 256/4ms 6-P-0300A QFJ018-P-R290 ZIP016-P-0300 DIP016-P-0300A N42C N41C MN41256a N4146 4141-00 41410 TSOP044-P0400A N4141

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000AL 130ns 150ns 20-LEAD

    44C1000AL

    Abstract: No abstract text available
    Text: 1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1000AL 44C1000AL KM44C1000AL 20-LEAD

    FG1000AL

    Abstract: No abstract text available
    Text: m n m xm 7BT4b21 DOQS' ì b' ì I PRX b'ì'ì 1000AL Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A ., 428 Avenue G. Durand, BP107, 72003 L e Marts, France(43) 72.75.15 P 0 Ü IER EX b4E IN ! D Asymmetric Gate-Turn-Off Thyristors


    OCR Scan     		PDF 7BT4b21 FG1000AL BP107, FG1000AL

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 1000AL 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000AL 130ns 1000AL- 150ns 20-LEAD

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    Untitled

    Abstract: No abstract text available
    Text: 1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1000AL 20-LEAD