wiring diagrams POWER COMMAND Hmi 211
Abstract: bR2335 equivalent J2/wiring diagrams POWER COMMAND Hmi 211
Text: SEL-421 Relay Protection and Automation System Instruction Manual User’s Guide 20130627 *PM421-01-NB* 2001–2013 by Schweitzer Engineering Laboratories, Inc. All rights reserved. All brand or product names appearing in this document are the trademark or registered trademark of their respective holders. No SEL
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Original
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SEL-421
PM421-01-NB*
SEL-421-1
SEL-421-2
wiring diagrams POWER COMMAND Hmi 211
bR2335 equivalent
J2/wiring diagrams POWER COMMAND Hmi 211
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MG150
Abstract: MG150Q2YS40 56i2
Text: TOSHIBA 50Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)
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MG150Q2YS40
02YS40
MG150
MG150Q2YS40
56i2
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage
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MG150Q2YS50
50Q2YS50
TjS125Â
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50Q2
Abstract: No abstract text available
Text: TOSHIBA 50Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.
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MG150Q2YS40
50Q2YS40
2-109C1A
50Q2
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG150Q2YS51
Temperat30000
TjS125
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG150Q2YS50
TjS125
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toshiba P
Abstract: 50Q2YS50
Text: TOSHIBA M G I 50Q2YS5Q TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG 50Q2YS50 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm M O TO R CONTROL APPLICATIONS 4 -FA ST -O N -T A B # 110 • • H igh Input Impedance High Speed : tf=0.3,us M ax. @ Inductive Load
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50Q2YS5Q
150Q2YS50
2-95A4A
MG15QQ2YS50
toshiba P
50Q2YS50
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG150Q2YS51
50Q2YS51
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MG*Q2YS51
Abstract: 50Q2 MG150Q MG150Q2YS51 MG150
Text: TO SHIBA 50Q2YS51 MG1 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode
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MG150Q2YS51
50Q2YS51
MG*Q2YS51
50Q2
MG150Q
MG150Q2YS51
MG150
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150Q2YS50
Abstract: MG150Q2YS50
Text: T O S H IB A 50Q2YS50 MG1 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)
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MG150Q2YS50
150Q2YS50
2-95A4A
150Q2YS50
MG150Q2YS50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 50Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.
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MG150Q2YS40
50Q2YS40
2-109C1A
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JW030B
Abstract: 0us0 8852c lucent dc-dc jc030 JC030C-M
Text: Data Sheet January 1997 microelectronics group Lucent Technologies Bell Labs Innovations JC030-Series Power Modules: 18 Vdc to 36 Vdc Inputs; 30 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ Low output noise ■ Constant frequency ■ Industry-standard pinout
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JC030-Series
confiC030B-M
JC030C-M
MHSTxxx40,
0002b72
JW030B
0us0
8852c
lucent dc-dc jc030
JC030C-M
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smd diode code a6I
Abstract: A1s smd TRANSISTOR 4c7 SMD grid tie inverters circuit diagrams ATT3000 grid tie inverter schematics n993 smd transistor A1s ATT3020 ATT3042
Text: Data Sheet October 1993 -— s u A T « T — M l * Microelectronics ATT3000 Series Field-Programmable Gate Arrays -50, -70, -100, -125, and -150 MHz Features Description • High performance—up to 150 MHz toggle rates The CMOS ATT3000 Series Field-Programmable Gate
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ATT3000
XC3000*
ATT3090
00s002t>
smd diode code a6I
A1s smd TRANSISTOR
4c7 SMD
grid tie inverters circuit diagrams
grid tie inverter schematics
n993
smd transistor A1s
ATT3020
ATT3042
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MOR01W
Abstract: No abstract text available
Text: ROYALOHM Metal Oxide Film Fixed Resistors Performance Specification Tem perature C oefficient ±350PPM /°C Short Tim e Overload Normal size: ± 1.0% + 0.05Q M ax, with no evidence o f mechanical damage. Small size: +(2.0% + 0.05i2)M ax, with no evidence o f mechanical damage.
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350PPM
100KQ
MOR05U
500-SS
MOR01W
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royalohm mor
Abstract: mor royalohm ROYALOHM MOF 20U15 MOR04S ROYALOHM mor01w royalohm
Text: ROYALOHM Metal Oxide Film Fixed Resistors Performance Specification Temperature Coefficient ±350PPM/°C Short Time Overload Normal size: + 1.0% + 0.05Q Max, with no evidence of mechanicaldamage. Small size: ±(2.0% + 0.05£2)Max, with no evidence of mechanical damage.
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350PPM/Â
MOR04S
400-S
100KQ
MOR05S
500-S
MOR05U
MOR500-SS
5Q-100KQ
royalohm mor
mor royalohm
ROYALOHM MOF
20U15
ROYALOHM
mor01w royalohm
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Untitled
Abstract: No abstract text available
Text: Data Sheet April 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. TheT7121 HDLC Interface for ISDN (HIFI-64) con
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T7121
HIFI-64)
TheT7121
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Untitled
Abstract: No abstract text available
Text: Advance Data Sheet March 1996 ÉHAT&T Microelectronics JW050F, JW075F, JW100F, JW150F Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 33 W to 99 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 80% typical
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JW050F,
JW075F,
JW100F,
JW150F
JW150F
JW050F
JW075F
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1 amp FET switch
Abstract: KSS oscillator LB1132AC Scans-00392 high-voltage bipolar transistor
Text: A T & T MELEC I C ESE D • G0S0D2b 00D27bl 1 ■ SWITCHED-MODE PULSE-WIDTH MODULATOR LB1132AC T\53-//~3) Description The LB1132AC Switched-Mode Pulse-Width Modulator (PWM) features a single-ended output which can either sink or source currents up to 200 mA. Consisting of eight functional blocks, the device is suitable for performing the basic
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00QS7bl
LB1132AC
T\53-//
LB1132AC
t-52h
1 amp FET switch
KSS oscillator
Scans-00392
high-voltage bipolar transistor
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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Snubber circuit Design
Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac teristics are closely related each other and cannot be considered independently are further, very
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30U6P42
50U6P43
75U6P43
100U6P43
Snubber circuit Design
MG15G6EL1
MG20G6EL1
MG25N6EK1
160U2G43 equivalent
MG300G1UL1
IGBT snubber for inductive load
calculation of IGBT snubber
MG400G1UL1
what is fast IGBT transistor
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Untitled
Abstract: No abstract text available
Text: Advance Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations L8576 Dual Subscriber Line Interface Circuit SLIC Features Description • Distortion-free, on-hook transmission The L8576 electronic dual subscriber line interface
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L8576
L8576
12-25B7
005002b
0025m
44-Pin
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100 K ohm Trimmer Trim Pot Variable Resistor
Abstract: 100T0002 silver conductive ink resins 10K0H 00t0011 prob sensor moisture
Text: Until that far-off time when electronic circuits are perfect, you'll need to include variable resistors in your designs. D uring each o f the next 12 m onths. Bourns and EDN w ill bring you easy-to-read excerpts from o u r popular "Trim m er P rim e r" series. For m any o f you, the Trim mer ABG Program w ill be a refresher course; fo r
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S-311-P-4/08G08P1
Abstract: c 9050 6001
Text: MCC New Concepts in Capacitors m M ATSUO since 1949 WET TANTALUM CAPACITORS FenixBSERIES Type 311 TANTAC Excellent stability & high reliability OF.,1 i*5r tim b e r’ - TAN TA C ® 311 i ± ^ y ^ M m (D S jz m m ^ y ^ y v -z :to TANTAC ® Type 311 is a G lass-to-Tantalum
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5082-0200
Abstract: No abstract text available
Text: Part No. 83 84 83 84 83 84 83 84 83 84 83 84 83 84 83 84 63 84 63 84 83 64 83 84 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 107 107 107 107 107 107 107 107 103 103 103 103 103 104 104 104 104 82 82 82 82 B2 62 82 62
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2B2-00
2C1-00
2C2-00
600S-1
5082-0200
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