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    50NA Search Results

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    50NA Price and Stock

    TDK Corporation AVRH10C270KT350NA8

    VARISTOR 27V 8A 0402
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    DigiKey AVRH10C270KT350NA8 Reel 10,000 10,000
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    Avnet Americas AVRH10C270KT350NA8 Reel 10 Weeks 10,000
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    Avnet Abacus AVRH10C270KT350NA8 15 Weeks 20,000
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    Chip One Stop AVRH10C270KT350NA8 Cut Tape 8,300
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    JST Manufacturing SFO-2.5-250NA

    TAB-ON FLAG CHAIN TERMINAL
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    DigiKey SFO-2.5-250NA Cut Tape 5,950 1
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    SFO-2.5-250NA Reel 3,000 3,000
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    Littelfuse Inc 0251.250NAT1L

    FUSE BRD MT 250MA 125VAC/VDC AXL
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    DigiKey 0251.250NAT1L Cut Tape 5,312 1
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    CoreStaff Co Ltd 0251.250NAT1L 2,551
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    Sager 0251.250NAT1L 5,000
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    STMicroelectronics STD14NM50NAG

    MOSFET N-CH 500V 12A DPAK
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    DigiKey STD14NM50NAG Digi-Reel 2,532 1
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    STD14NM50NAG Cut Tape 2,532 1
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    STD14NM50NAG Reel 2,500 2,500
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    Avnet Americas STD14NM50NAG Reel 16 Weeks 2,500
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    Mouser Electronics STD14NM50NAG 1,957
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    Newark STD14NM50NAG Cut Tape 2,508 1
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    STMicroelectronics STD14NM50NAG 1,957 1
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    Avnet Silica STD14NM50NAG 2,500 17 Weeks 2,500
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    Chip One Stop STD14NM50NAG Cut Tape 2,295
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    EBV Elektronik STD14NM50NAG 17 Weeks 2,500
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    Bel Power Solutions SSQE48T13050-NAB0G

    DC DC CONVERTER 5V 65W
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    DigiKey SSQE48T13050-NAB0G Tray 198 1
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    Onlinecomponents.com SSQE48T13050-NAB0G
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    Sager SSQE48T13050-NAB0G 10
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    Find more 50NA price and stock on Findchips.com

    50NA Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    50NA0.47MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 0.47UF 50V 20% RADIAL Original PDF
    50NA100MEFC10X16 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 100UF 50V 20% RADIAL Original PDF
    50NA10MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 10UF 50V 20% RADIAL Original PDF
    50NA1MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1UF 50V 20% RADIAL Original PDF
    50NA220MEFC12.5X20 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    50NA2.2MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 2.2UF 50V 20% RADIAL Original PDF
    50NA22MEFC6.3X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 22UF 50V 20% RADIAL Original PDF
    50NA2R2M5X11 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    50NA2R2MEFC5X11 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2.2UF 20% 50V THRUHOLE Original PDF
    50NA3.3MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 3.3UF 50V 20% RADIAL Original PDF
    50NA33MEFC6.3X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 33UF 50V 20% RADIAL Original PDF
    50NA4.7MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 4.7UF 50V 20% RADIAL Original PDF
    50NA47MEFC8X11.5 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 47UF 50V 20% RADIAL Original PDF
    50NA4R7M5X11 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF

    50NA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DAC7512

    Abstract: No abstract text available
    Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V


    Original     		DAC7512 SBAS156B 12-Bit 200nA OT23-6 DAC7512 PDF

    marking code D3 SOT23-6 DAC

    Abstract: d12n marking DAC7512 D12N DAC7512E DAC7512N
    Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V


    Original     		DAC7512 SBAS156B 12-Bit 200nA OT23-6 DAC7512 DAC75reproduction marking code D3 SOT23-6 DAC d12n marking D12N DAC7512E DAC7512N PDF

    Untitled

    Abstract: No abstract text available
    Text: WEITRON WSD420 Surface Mount Schottky Barrier Diodes Features: *Low Power Rectification *Small Surface Mounting Type *Low I R IR =50nA Typ *High Reliability Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping,


    Original     		WSD420 OT-23 OT-23 PDF

    2N3906V

    Abstract: 2N3904V 1N916
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity.


    Original     		2N3904V 2N3906V. 100mA 2N3906V 2N3904V 1N916 PDF

    KN2907A

    Abstract: 2222a KN2222 KN2907
    Text: SEMICONDUCTOR KN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.


    Original     		KN2907/A -50nA -150mA, -15mA. KN2222/2222A. KN2907 KN2907A KN2907A 2222a KN2222 PDF

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.


    Original     		KN3905S -50mA, -50nA KN3903S. Width300 100kHz KN3903S KN3905S PDF

    DAC7512

    Abstract: marking code 10 sot23 NATIONAL SEMICONDUCTOR MARKING CODE sot D12N DAC7512E DAC7512N D12e d12n marking
    Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V


    Original     		DAC7512 SBAS156B 12-Bit 200nA OT23-6 DAC7512 DAC75plifiers marking code 10 sot23 NATIONAL SEMICONDUCTOR MARKING CODE sot D12N DAC7512E DAC7512N D12e d12n marking PDF

    Operational Amplifiers SOT-23-5

    Abstract: No abstract text available
    Text: You are in Databook Vol. 3 • Click for Main Menu February 18, 1999 Operational Amplifier Selection Guide Description GBW Slew Rate MIC6211 High-Voltage Op Amp 2.5MHz 6V/µs 1.2mA 7mV 50nA MIC6251 GainBlock Amplifier 2MHz 6V/µs 1.3mA 14mV MIC6252 GainBlock™ Amplifier


    Original     		MIC6211 MIC6251 MIC6252 LMC7101 MIC7111 MIC7201 25kHz 400kHz 500mV/ MIC7300 Operational Amplifiers SOT-23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3904E 2N3906E. x10-4 100mA Width300 PDF

    2N3906E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		2N3906E -50nA -50mA, 2N3904E. x10-4 -10mA, -10mA -50mA 2N3906E PDF

    KN3903

    Abstract: KN3905
    Text: SEMICONDUCTOR KN3903 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌLow Leakage Current : ICEX=50nA Max. , @VCE=30V, VEB=3V. ᴌLow Saturation Voltage N E K : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.


    Original     		KN3903 KN3905. KN3903 KN3905 PDF

    1N916

    Abstract: 2N2906E
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity.


    Original     		2N2906E -50nA -50mA, 1N916 2N2906E PDF

    DAC7512

    Abstract: dac interfacing with 8051 microcontroller marking 332 sot23-6 400H DAC7512E
    Text: DAC7512 DAC 751 2 DAC 751 2 www.ti.com Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V ● GUARANTEED MONOTONIC BY DESIGN


    Original     		DAC7512 12-Bit 200nA OT23-6 DAC7512 DAC751customer dac interfacing with 8051 microcontroller marking 332 sot23-6 400H DAC7512E PDF

    DAC7512

    Abstract: No abstract text available
    Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V


    Original     		DAC7512 SBAS156B 12-Bit 200nA OT23-6 DAC7512 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.


    Original     		2N2906E -50nA -50mA, PDF

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906 PDF

    2N5551

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage


    OCR Scan     		2N5551 100MHz 2N5551 PDF

    2N5401

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V


    OCR Scan     		2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage


    OCR Scan     		2N3904U 2N3906U. PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1572 UC2572 UC3572 U N IT R O E 3E FEATURES DESCRIPTION • Simple Single Inductor Flyback PWM for Negative Voltage Generation • Drives External PMOS Switch • Contains UVLO Circuit • Includes Pulse-by-Pulse Current Limit • Low 50nA Sleep Mode Current


    OCR Scan     		UC1572 UC2572 UC3572 UC3572 com-----15k 10kHz 200kHz. UDG-9409S 100nF PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity


    OCR Scan     		YTS39Q6 -50nA -50mA, YTS3904 PDF

    2N3906U

    Abstract: Scans-00124840
    Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .


    OCR Scan     		2N3906U -50nA -50mA, 300ns 1n916 20/xs 300//S, 2N3906U Scans-00124840 PDF

    KN2907AS

    Abstract: KN2907S KN2907S/2907AS
    Text: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.


    OCR Scan     		KN2907S/AS -50nA -150mA, -15mA. KN2222S/AS. KN2907S KN2907AS 10x8x0 KN2907AS KN2907S/2907AS PDF

    Untitled

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R 2N3904E TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. r —7—-1 FEATURES • Low Leakage Current : ICEjj=50nA Max. , IBL=50nA(Max.) @Vce=30V, Veb=3V. D IM M IL L IM E T E R S A


    OCR Scan     		2N3904E 2N3906E. 300iiS, PDF