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    60N60A

    Abstract: c5021-0
    Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90


    OCR Scan     		PDF 50N60AU1 O-264 JEDECTO-264AA 100-C 50N60AU1 60N60A c5021-0

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    Abstract: No abstract text available
    Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20


    OCR Scan     		PDF 50N60AU1 25cCto O-247 50N80AU1 1999IXYS

    ixys ml 075

    Abstract: 50N60A
    Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES


    OCR Scan     		PDF IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A