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    5082282 Search Results

    5082282 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5082-2824 Advanced Semiconductor Diode Original PDF
    5082-2824 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
    5082-2824 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5082-2826 Agilent Technologies Rectifier Diode, Schottky Diode, Single, 15V, Outline 15, 2-Pin Original PDF
    5082-2826 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    5082282 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 5082-3080

    Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-xxxx 5082-xxxx 5968-4304E diode 5082-3080 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711 PDF

    IR 10e

    Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-XXXX IR 10e HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5082-2827 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq2.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0 Maximum Conversion Loss (dB)4.6


    Original     		Min250 PDF

    5082-2080

    Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
    Text: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05


    Original     		MIL-STD-750. 1N5711/12 DOD-HDBK-1686 5082-28XX 5082-2080 5082-2826 5082-2835 MTTF 5965-8870E Y2272 PDF

    HP5082-2750

    Abstract: 5082-2750 square-law video Log Amplifier detector 18 GHz flicker meter K623
    Text: Schottky Barrier Diode Video Detectors Application Note 923 I. Introduction This Application Note describes the characteristics of Hewlett-Packard Schottky Barrier Diodes intended for use in video detector or video receiver circuits, and discusses some design features of such circuits.


    Original     		MTT-14, HP5082-2750 5082-2750 square-law video Log Amplifier detector 18 GHz flicker meter K623 PDF

    5082-2824

    Abstract: 5082282
    Text: 5082-2824 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2824 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. MAXIMUM RATINGS


    Original     		PDF

    1N5712 spice

    Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented


    Original     		1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D PDF

    IN5712

    Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
    Text: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-xxxx 5082-xxxx IN5712 1N5711 1N5712 N5712 1N5712 spice 5082282 PDF

    diode t25 13 Go

    Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
    Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in


    Original     		1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811 PDF

    1N5712

    Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring


    Original     		5082-28xx 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N5712 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice PDF

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800 PDF

    5082-2826

    Abstract: No abstract text available
    Text: 5082-2826 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB) Maximum Conversion Loss (dB)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 5082-2824 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandD-J Test Freq2.0G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit


    Original     		PDF

    diode hp 2835 schottky

    Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
    Text: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available


    OCR Scan     		1N5711 1N5712 5082-XXXX 5965-8844E 5966-0930E diode hp 2835 schottky diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 PDF

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815 PDF

    5082-2815

    Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
    Text: Ihp% 1"KM Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/


    OCR Scan     		1N5711, JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 1N5711 5082-2815 5082-2370 5082-2813 150 AVP 5082-2800 diode 5082-2800 5082-2811 PDF

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912 PDF

    ic 5082

    Abstract: TC 5082 P 5082-275 5082-2824 2824I
    Text: HEWLETT-PACKARD/ CMPNTS blE D • 44475ÖM ODOTbSS 881 «HPA W h a t HEWLETT IL 'ttM PACKARD S ch ottk y B arrier D iod es for D etectors Technical Data 5082-2750/51 5082-2755 5082-2787 5082-2824 Features • Improved D etection Sensitivity TSS of -55 dBm a t 10 GHz


    OCR Scan     		44475A4 ic 5082 TC 5082 P 5082-275 5082-2824 2824I PDF

    diode hpa 2800

    Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
    Text: HEWLETT-PACKARD/ CMPNTS blE D • 4447564 QQOIbeb 7ST * H P A Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V


    OCR Scan     		1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 diode hpa 2800 5082-2815 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301 PDF

    5082-2811

    Abstract: No abstract text available
    Text: warn H EW L E T T m¡3¡M PA CK A R D Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 niA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		1N5711 1N5712 5082-XXXX 5082-2811 PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 PDF

    diode hp 2835 schottky

    Abstract: diode hp 2811 HP 5082-2900 IN5711 hp2811 hp 5082-2900 diode diode hp 2800 hp 5082-2800 diode diode hp 5082-2080 diode hp 2900
    Text: m H EW LETT PA CK A RD S c h o ttk y B arrier D io d e s for G en eral P u rp ose A p p lic a tio n s Technical Data F eatures • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico S econ d Sw itching Speed • High Breakdow n Voltage Up to 70 V • M atched C haracteristics


    OCR Scan     		1N5711 1N5712 1N5711, 1N5712, 5967-5767E diode hp 2835 schottky diode hp 2811 HP 5082-2900 IN5711 hp2811 hp 5082-2900 diode diode hp 2800 hp 5082-2800 diode diode hp 5082-2080 diode hp 2900 PDF

    5082-2811

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PA C K A R D Schottky Barrier D iodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Sw itching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		1N5711 1N5712 5082-XXXX 5082-2811 PDF

    diode hp 5082-2751

    Abstract: MIL-STD-750 METHOD 2036 5082-2824 5082-2750 5082 schottky
    Text: What H E W LE T T PACKARD Schottky Barrier Diodes for Detectors Technical Data Features • Improved Detection Sensitivity TSS of-55 dBm at 10 GHz • Low 1/f Noise Typical Noise-Temperature Ratio = 4 dB at 1 kHz • High Peak Power Dissipation 4.5 W RF Peak Pulse Power


    OCR Scan     		of-55 diode hp 5082-2751 MIL-STD-750 METHOD 2036 5082-2824 5082-2750 5082 schottky PDF