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    501N04 Price and Stock

    IXYS Corporation DE150-501N04A

    Mosfet, N, Rf, 500V, De150; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation:200W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C; Msl:-Rohs Compliant: Yes |Ixys Rf DE150-501N04A
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    SMC Corporation of America PFMB7501-N04-E

    Flow Switch, for air, 2 color, digital,5-500L/min,1/2NPT, PNP+anal, leadwire | SMC Corporation PFMB7501-N04-E
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    RS PFMB7501-N04-E Bulk 1 1
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    SMC Corporation of America PFMB7501-N04-B

    FLOW SWITCH, 2-COLOR DIGITAL FOR AIR, PFM | SMC Corporation PFMB7501-N04-B
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    RS PFMB7501-N04-B Bulk 1
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    SMC Corporation of America PFMB7501-N04-DW

    FLOW SWITCH FOR AIR, DIGITAL, 2 COLOR, IP40, 5-500 L/MIN | SMC Corporation PFMB7501-N04-DW
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    RS PFMB7501-N04-DW Bulk 5 Weeks 1
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    SMC Corporation of America PF2MC7501-N04-D

    FLOW SWITCH, 3 COLOR DISPLAY DIGITAL, PFM SERIES | SMC Corporation PF2MC7501-N04-D
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    RS PF2MC7501-N04-D Bulk 5 Weeks 1
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    501N04 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    501N04 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    501N04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    501N04

    Abstract: DE-150-501N04 DE-150
    Text: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-150 501N04 150oC 501N04 DE-150-501N04

    nec 2401

    Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A nec 2401 DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60

    nec 2401

    Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
    Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04

    200W MOSFET POWER AMP

    Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A 501N04A 200W MOSFET POWER AMP DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02

    TCI balun

    Abstract: tci hf antenna 225 400 MHz transmitting antenna TCI antenna balun 50 kW tci model 501 TCI 501 501-1-N hf antenna balun TCI antenna balun
    Text: MODEL 501 Short Range Antenna Most communicators are well aware of the problems associated with “close-in” HF communications. Frequently it is easier to raise a station 2,000 km away than it is one’s base of operations 100 miles distant. To a large extent, the problems of short-range


    Original     		PDF 501-N-02 501-N-03 501-N-04 501-N-06 TCI balun tci hf antenna 225 400 MHz transmitting antenna TCI antenna balun 50 kW tci model 501 TCI 501 501-1-N hf antenna balun TCI antenna balun

    503-4-N

    Abstract: 503-3-N TCI vertical log periodic antenna TCI antenna Antenna TCI tci model 501 TCI antenna 503 RS-222C 5030-304
    Text: MODEL 503 Vertical Curtain Antenna TCI’s Model 503 family of antennas provides efficient long-haul or sectoral coverage service. The Model 503 is a vertically polarized log-periodic dipole antenna with a narrow, low-angle elevation plane pattern, suitable for medium or long distance


    Original     		PDF 501-3H-N 503-4-N 503-5-N 503-6-N 503-7-N 503-10-N 503-4-N 503-3-N TCI vertical log periodic antenna TCI antenna Antenna TCI tci model 501 TCI antenna 503 RS-222C 5030-304

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		PDF DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05