Untitled
Abstract: No abstract text available
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
JANSR2N7398
FSL430R4
|
PDF
|
2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
|
Original
|
FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
|
PDF
|
2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
|
Original
|
FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
OCR Scan
|
FSL430D,
FSL430R
36MeV/mg/cm2
O-205AF
254mm)
|
PDF
|
2E12
Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
Rad Hard in Fairchild for MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
|
Original
|
IRSM836-025MA
IRSM836-025MA
12x12mm
|
PDF
|
DIODE JS
Abstract: No abstract text available
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
|
Original
|
IRSM836-025MA
IRSM836-025MA
12x12mm
DIODE JS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
|
Original
|
RDD022N50
SC-63)
OT-428)
022N50
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
|
Original
|
RDD023N50
SC-63)
OT-428)
023N50
R1102A
|
PDF
|
JANSR2N7398
Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7398
FSL430R4
JANSR2N7398
2E12
3E12
FSL430R4
Rad Hard in Fairchild for MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
|
Original
|
2SK2178
F2E50VX2)
|
PDF
|
E102h
Abstract: No abstract text available
Text: JANSR2N7398 S MAEESS August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
OCR Scan
|
JANSR2N7398
1-800-4-HARRIS
E102h
|
PDF
|
power mosfet 220 v 1a
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 2A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
|
Original
|
2SK2178
F2E50VX2)
power mosfet 220 v 1a
|
PDF
|
FDPF5n50u
Abstract: No abstract text available
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
|
Original
|
FDP5N50U
FDPF5N50UT
FDPF5n50u
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500
|
OCR Scan
|
FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
004S703
|
PDF
|
2N50
Abstract: 547B
Text: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
O-220F
O-252
QW-R502-547
2N50
547B
|
PDF
|
FSL430R
Abstract: tf 115 250v 2a 4010 IC data sheet MIL-S-19500 2E12 3E12 FSL430D fsl430
Text: S E M I C O N D U C T O R FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
Original
|
FSL430D,
FSL430R
100KRADS
100ghts
1-800-4-HARRIS
FSL430R
tf 115 250v 2a
4010 IC data sheet
MIL-S-19500
2E12
3E12
FSL430D
fsl430
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1
|
OCR Scan
|
2SK2715
SC-63
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
|
PDF
|
irt 1260
Abstract: HIP5500IB HIP5500 HIP5500IP RFV10N50BE
Text: HIP5500 July 1998 WN ITHDRA TE W T R A P O LE S S OB S N S PROCE IG S W DE NO NE Features • 500V Maximum Rating • 2A Peak Gate Drive • Ability to Interface and Drive N-Channel Power Devices With Complimentary Outputs For Buffered FETs • Fault Output, Overcurrent Detection and Undervoltage
|
Original
|
HIP5500
600kHz
HIP5500,
irt 1260
HIP5500IB
HIP5500
HIP5500IP
RFV10N50BE
|
PDF
|
UEI 410
Abstract: 2SK2715
Text: Transistors Small switching 500V, 2A 2SK2715 • Features • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5±0.2 5 1+02 r i, f V 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e guara ntee d at Voss = ± 3 0 V .
|
OCR Scan
|
2SK2715
SC-63
UEI 410
2SK2715
|
PDF
|
ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
|
Original
|
SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
|
PDF
|
547 MOSFET
Abstract: "by 236" diode 2n50 500v 2A mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
O-220F
O-252
QW-R502-547
547 MOSFET
"by 236" diode
2n50
500v 2A mosfet
|
PDF
|
2E12
Abstract: 3E12 FRM430D FRM430H FRM430R
Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRM430D
FRM430H
FRM430R
|
PDF
|
H30E2
Abstract: H30E271
Text: ’ HARRIS SEniCOND SECTOR H A R R bSE ]> IS S E M IC O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H • H3QE271 QDMTClSb IbT « H A S 2N7282D, 2N7282R 2N7282H Radiation Hardened N-Channel Power MOSFETs June 1993 Package Features
|
OCR Scan
|
H3QE271
FRS430
2N7282D,
2N7282R
2N7282H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
H30E2
H30E271
|
PDF
|
