FDPF5n50u
Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP5N50U
FDPF5N50UT
January2012
FDPF5N50UT
FDPF5n50u
diode 4A 400v ultra fast
N-channel 500V mosfet
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FDPF5N50UT
Abstract: fdp5n50u FDPF5n50u FDPF5N50
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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Original
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PDF
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FDP5N50U
FDPF5N50UT
FDPF5N50UT
FDPF5n50u
FDPF5N50
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FDPF5n50u
Abstract: No abstract text available
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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Original
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PDF
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FDP5N50U
FDPF5N50UT
FDPF5n50u
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FDPF5N50UT
Abstract: FDPF5n50u FDP5N50U
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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Original
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PDF
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FDP5N50U
FDPF5N50UT
May2012
FDPF5N50UT
FDPF5n50u
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