MTO thyristor
Abstract: mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v
Text: SDM170HK2 500A, 4500V 53mm MTOTM Thyristor Features Package 500A, 4500V Voltage Control Turn-Off Capability Low Power Gate Driver A = 75.2mm, B = 48.3mm, D = 27.2mm Symmetrical Blocking Capability Description MTOTM Thyristor is a new hybrid high power bipolar MOS turn-off thyristor. It is
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SDM170HK2
Sdm170v2
MTO thyristor
mos Turn-off Thyristor
100a 1000v thyristor
GTO thyristor 100A, 2000V
300A thyristor gate control circuit
100A gate turn-off thyristor
300a 1000v thyristor
150A 2000V GTO thyristor
100a 1000v GTO
150a gto 2000v
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Untitled
Abstract: No abstract text available
Text: Solid State Relays G3RV Slimmest OMRON plug-in SSR with maximum width 6.2 mm • Long electrical life and high speed switching • Large plug-in terminals for reliable connection • G3RV-D DC load models can manage resistive loads of 100 µA to 3.0 A • LED indicator for visible operation checking
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J180-E1-02
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G3RV-D03SL
Abstract: G3RV-SL700 G3RV-202S 24VAC RELAY DRIVER P2RVM 202SL EN60947-7-1
Text: Slim Relay G3RV The World's First Industrial Slim Relay • G2RV compatible • LED indicator built in SSR • Push-in terminals and accessories for easy wiring. Model Number Structure • Model Number Legend G3RV-SL @ @ @ - @ 1 2 3 4 4. Output voltage specifications
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J180-E1-01
G3RV-D03SL
G3RV-SL700
G3RV-202S
24VAC RELAY DRIVER
P2RVM
202SL
EN60947-7-1
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Untitled
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM13415CA-S •概要 ■特長 ELM13415CA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ・ Id=-4A Vgs=-4.5V オン抵抗という特性を備えた大電流 MOS FET です。 また、 保護回路によって ESD 耐性があります。
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ELM13415CA-S
AO3415
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Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM14354AA-N •概要 ■特長 ELM14354AA-N は低ゲート入力電荷 低いゲー ・ Vds=30V ト電圧、 及び低いオン抵抗という特性を備えた大電流 ・ Id=23A Vgs=10V MOS FET です。
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ELM14354AA-N
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AO4456
Abstract: No abstract text available
Text: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4456
AO4456
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ao4456
Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
7716 mosfet
24V 20A SMPS
30V 20A smps
TYP31
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Untitled
Abstract: No abstract text available
Text: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in
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AO4726
AO4726
00A/us
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ao4712
Abstract: No abstract text available
Text: AO4712 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4712
AO4712
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Untitled
Abstract: No abstract text available
Text: AON7702A 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON7702A
AON7702A
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AO4712
Abstract: No abstract text available
Text: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4712
AO4712
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aon7702
Abstract: No abstract text available
Text: AON7702 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON7702
AON7702
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pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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BUK657-500A
Abstract: BUK657-500B BUK657 BUK657-500C T0220AB buk657-500 r gb 489
Text: N AMER PHILIPS/DISCRETE 5SE D • 0D2071D T ■ PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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OCR Scan
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fabS3131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
r-39-J3
BUK657
-500A
-500B
-500C
T0220AB
buk657-500
r gb 489
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BUK657-500C
Abstract: No abstract text available
Text: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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bbS3T31
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
9/76m
BUK657-500C
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BUK637-500B
Abstract: diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C BUK637
Text: Philips Components BUK637-500A BUK637-500B BUK637-500C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancem ent mode lield-effect power transistor in a plastic envelope. F R E D F E T with last recovery reverse diode,
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
M89-1167/RC
BUK637-500B
diod rj 93
500a fet
Diode 500A
BUK637-500A
BUK637-500C
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BUK637-500B
Abstract: BUK637-500A BUK637-500C
Text: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 *7 -is* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
BUK637-500C
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
BUK627
si70Id
Q020fc
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE 25E ]> • bbS3T31 aaaQbTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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bbS3T31
BUK655-500A
BUK655-500B
BUK655-500C
BUK655
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GS 069 LF
Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
T-39-15
GS 069 LF
HCA-120
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500c t2
Abstract: BUK627-500A BUK627-500B BUK627-500C
Text: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
-r-37-
BUK627
-500A
-500B
-500C
500c t2
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diode t25 4 L0
Abstract: BUK655-500A BUK655-500B BUK655-500C T0220AB BUK655-500 1c7s
Text: 2SE J> N AflER P H IL I P S / I > I S C R E T E bbS 3T31 QD20t.cÎS 7 BUK655-500A BUK655-500B BUK655-500C PowerMOS transistor Fast Recovery Diode FET T - 3 7 - /3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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bbS3131
Q020t.
BUK655-500A
BUK655-500B
BUK655-500C
BUK655
-500A
-500B
-500C
diode t25 4 L0
T0220AB
BUK655-500
1c7s
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BUK655-500A
Abstract: BUK655-500B BUK655-500C T0220AB dlp afe 1000
Text: N AMER P H I L I PS /D IS CR ET E 25E » • bbS3T31 QOEObTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B . BUK655-500C T - 3 7 - /3 g e n e r a l d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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bbS3131
a020t.
BUK655-500A
BUK655-500B
BUK655-500C
T-37-/3
BUK655
-500A
-500B
-500C
BUK655-500C
T0220AB
dlp afe 1000
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BUK627-500A
Abstract: BUK627-500B BUK627-500C
Text: N AMER PHILIPS/DISCRETE SSE D m b b 5 3 c131 GD2Gbba P o w erM O S tra n s isto r Fast R ecovery D iode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly
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OCR Scan
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
-r-37-
BUK627
-500A
-500B
-500C
-ID/100
BUK627-500A
BUK627-500B
BUK627-500C
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