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    5 WATT POWER TRANSISTOR BD Search Results

    5 WATT POWER TRANSISTOR BD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    5 WATT POWER TRANSISTOR BD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    MJE371 equivalent

    Abstract: MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry


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    MJE371 MJE521 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE371 equivalent MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062 PDF

    transistor 2n222a

    Abstract: 2n222a npn transistor 2n222a 2n222a datasheet 2n222A TRANSISTOR BDC 47 transistor TRansistor 648 2n2222a SOT23 pin configuration transistor 2N2222A bs170 substitute
    Text: EVALUATION KIT FOR TC642/TC646/648 BDC FAN CONTROLLERS TC642EV TC642EV EVALUATION KIT FOR TC642/TC646/648 BDC FAN CONTROLLERS FEATURES GENERAL DESCRIPTION • TC642EV is a fully assembled 4 inch by 6 inch circuit board that allows the user to evaluate and prototype brushless


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    TC642/TC646/648 TC642EV TC642/TC646/648 TC642EV TC642, TC646 TC648 TC642) TC646/TC648) transistor 2n222a 2n222a npn transistor 2n222a 2n222a datasheet 2n222A TRANSISTOR BDC 47 transistor TRansistor 648 2n2222a SOT23 pin configuration transistor 2N2222A bs170 substitute PDF

    CAPACITOR chip murata mtbf

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15030/D MRF15030 MRF15030/D* PDF

    K1461

    Abstract: BD189 BD185 735M
    Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com­


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    Q0flM717 BD185 BD189 K1461 735M PDF

    transistor sc 236

    Abstract: transistor sc 238
    Text: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers


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    BD234 BD236 BD238 transistor sc 236 transistor sc 238 PDF

    transistor d 188

    Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor
    Text: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing


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    ym 238

    Abstract: transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237
    Text: "nOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC Tt 9 6D 8 0 5 7 3 CXSTRS/R F D T-33-09 BD233 BD235 BD237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE POWER TRANSISTOR P LA STIC M E D IU M POW ER S IL IC O N N P N TR A N S IS TO R NPN SILICO N . . . designed for use in 5 to 10 Watt audio amplifiers and drivers


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    T-33-09 BD233 BD235 BD237 3b7254 ym 238 transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237 PDF

    BD179

    Abstract: BD179-10 BD180 NPN bipolar junction transistors max hfe 2000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 B D 179-10 P lastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD179 BD180 BD179-10 BD180 NPN bipolar junction transistors max hfe 2000 PDF

    TRANSISTOR C 3205

    Abstract: transistor c 3228 TRANSISTOR C 3205 CIRCUIT DIAGRAM 3205 transistor lambda LAS 3205 las 3228 lambda Lambda POWER Hybrid VOLTAGE REGULATOR LAMBDA Voltage Regulator CURRENT12-3 LAS 3228
    Text: VEEC O/L AM BD A SEMICOND GE D | T4M7b3b ODOOTÖB 1 T - S Z 'U A LAMBDA LINEAR REGULATORS -1 3 LAS 3 2 0 0 SERIES 10 AMP, 140 WATT POSITIVE HYBRID VOLTAGE REGULATORS . ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAXIMUM UNITS V,N 40 Volts Input-O utput


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    0D007Ã 000D7Ã 075-k-| TRANSISTOR C 3205 transistor c 3228 TRANSISTOR C 3205 CIRCUIT DIAGRAM 3205 transistor lambda LAS 3205 las 3228 lambda Lambda POWER Hybrid VOLTAGE REGULATOR LAMBDA Voltage Regulator CURRENT12-3 LAS 3228 PDF

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


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    BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810 PDF

    transistor tt 2206

    Abstract: TT 2206 transistor diagram transistor tt 2206 TT 2206 TT 2206 pin FEATURES tt 2206 LAMBDA Voltage Regulator CURRENT12-3 LAS2212 Adjustable Positive Voltage Regulator 50v
    Text: A LAM BDA LIN EAR REGULATORS LAS 2 2 0 0 SERIES 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PAR AM ETER SYM BOL M A X IM U M U N ITS VlN 40 Volts Input-Output Voltage Differential V,N-V0 37.5 Volts Power Dissipation' Input Voltage


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    BD506

    Abstract: BD509 BD510 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507
    Text: BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PN P SILIC O N A U D IO T R A N S IS T O R S PN P SILIC O N A N N U LA R * 20 - 30 - 40 VOLTS 10 WATTS T R A N S IS T O R S . . designed for complementary symmetry audio circuits • Excellent Current G ain Linearity — 1.0 m A dc to 1.0 A d c


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    BD506 BD508 BD510 BD505. BD507, BD509 BDS06. BD506-1, BD506-5, BD508 BD506 BD509 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507 PDF

    rohm mtbf

    Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ PDF

    10 watt power transistor bd

    Abstract: BD 166, 168, 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60,80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD165 BD169 10 watt power transistor bd BD 166, 168, 170 PDF

    capacitor mallory

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf PDF

    TRANSISTOR motorola 416 IC

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio am plifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD180 BD179 BD180T TRANSISTOR motorola 416 IC PDF

    10 watt power transistor bd

    Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc


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    BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140 PDF

    transistor BD 139

    Abstract: transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 BD135
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary o r quasi com plementary circuits. • • DC Current Gain — hpE = 40 Min @ l c = 0.15 Adc


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    BD135 BD137 BD139 transistor BD 139 transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 PDF

    transistor BD 522

    Abstract: A 798 transistor bd801 Bd798
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor "Motorola Preferred Dtvlo« 8 AMPERE POWER TRANSISTORS NPN 8ILIC0N 100 VOLTS 05 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


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    BD801 BD801 transistor BD 522 A 798 transistor Bd798 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD237 PDF

    BD179

    Abstract: transistor d179 TRANSISTOR motorola 416 IC
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use ¡n 5.0 to 10 Watt audio am plifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD179 BD180 BD179-10 transistor d179 TRANSISTOR motorola 416 IC PDF

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


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    1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 PDF