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    FLM717 Price and Stock

    FUJITSU Limited FLM7177-4C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLM7177-4C 31
    • 1 $185.0223
    • 10 $185.0223
    • 100 $158.5905
    • 1000 $158.5905
    • 10000 $158.5905
    		Buy Now

    Sumitomo Wiring Systems LTD FLM7179-8F/610

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLM7179-8F/610 23
    • 1 $185.5053
    • 10 $180.2051
    • 100 $169.6048
    • 1000 $169.6048
    • 10000 $169.6048
    		Buy Now

    FUJITSU Limited FLM7177-8C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLM7177-8C 9
    • 1 $351.8953
    • 10 $321.7328
    • 100 $321.7328
    • 1000 $321.7328
    • 10000 $321.7328
    		Buy Now

    FLM717 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLM7177-12D Unknown FET Data Book Scan PDF
    FLM7177-4C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM7177-4C/D Unknown FET Data Book Scan PDF
    FLM7177-4D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM7177-8C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM7177-8C/D Unknown FET Data Book Scan PDF
    FLM7177-8D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM7179-12F Eudyna Devices C-Band Internally Matched FET Original PDF
    FLM7179-12F Fujitsu C-Band Internally Matched FET Original PDF
    FLM7179-18F Fujitsu C-Band Internally Matched FET Original PDF
    FLM7179-18F Unknown C-Band Internally Matched FET Original PDF
    FLM7179-4F Fujitsu C-Band Internally Matched FET Original PDF
    FLM7179-4F Unknown C-Band Internally Matched FET Original PDF
    FLM7179-6F Eudyna Devices FET Misc, C-Band Internally Matched FET Original PDF
    FLM7179-6F Fujitsu C-Band Internally Matched FET Original PDF
    FLM7179-8F Fujitsu C-Band Internally Matched FET Original PDF
    FLM7179-8F Unknown C-Band Internally Matched FET Original PDF

    FLM717 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-18F -46dBc FLM7179-18F

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-6F -46dBc FLM7179-6F FCSI0598M200

    FLM7179-8F

    Abstract: No abstract text available
    Text: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-8F -46dBc FLM7179-8F FCSI0598M200

    108 to 174 mhz

    Abstract: FLM7179-4F
    Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-4F -46dBc FLM7179-4F FCSI0999M200 108 to 174 mhz

    27.5dbm ,GaAs FET

    Abstract: FLM7179-6F
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-6F -46dBc FLM7179-6F 27.5dbm ,GaAs FET

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: hadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-18F -46dBc FLM7179-18F FCSI0599M200

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-12F -46dBc FLM7179-12F FCSI0599M200

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-12F -46dBc FLM7179-12F

    FLM7179-12F

    Abstract: No abstract text available
    Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-12F -46dBc FLM7179-12F FCSI0599M200

    FLM7179-18F

    Abstract: No abstract text available
    Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-18F -46dBc FLM7179-18F

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-8F -46dBc FLM7179-8F FCSI0598M200

    FLM7179-8F

    Abstract: No abstract text available
    Text: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-8F -46dBc FLM7179-8F

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-4F -46dBc FLM7179-4F FCSI0999M200

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-4F -46dBc FLM7179-4F FCSI0598M200

    K1461

    Abstract: BD189 BD185 735M
    Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com­


    OCR Scan     		PDF Q0flM717 BD185 BD189 K1461 735M

    Untitled

    Abstract: No abstract text available
    Text: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature


    OCR Scan     		PDF FLM7177-IHDA 37dBm ------34dBm

    7177-4C

    Abstract: No abstract text available
    Text: FLM7177-4C Internally M atch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		PDF FLM7177-4C 30dBm 7177-4C

    FLM7179-8F

    Abstract: No abstract text available
    Text: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF -46dBc FLM7179-8F FLM7179-8F FCSI0598M200

    FLM7177-18DA

    Abstract: U/25/20/TN26/15/850/FLM6472-18DA
    Text: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-18DA UJ111 -45dBc FLM7177-18DA U/25/20/TN26/15/850/FLM6472-18DA

    FLM7177-8C

    Abstract: No abstract text available
    Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		PDF FLM7177-8C 39dBm 7177-8C FLM7177-8C

    7177-8C

    Abstract: FLM7177-8C/D
    Text: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-8C 39dBm FLM7177-8C 7177-8C FLM7177-8C/D

    FLM7177-12D

    Abstract: FLM7177
    Text: çP FLM7177-12DA lUJI I j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-12DA -45dBc 30dBm FLM7177-12DA FLM7177-12D FLM7177

    FLM7177-8D

    Abstract: i80m
    Text: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz


    OCR Scan     		PDF FLM7177-8D 39dBm -45dBc 28dBm FLM7177-8D 7177-8D i80m

    FLM7179-12F

    Abstract: cq 443 fet 2819 18 g
    Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF -46dBc FLM7179-12F FLM7179-12F FCSI0599M200 cq 443 fet 2819 18 g