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    4N10L22

    Abstract: No abstract text available
    Text: IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS on ,max4) 22 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPG20N10S4L-22 4N10L22 4N10L22