HYM76V4M655HGLT6-8
Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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PC100
4Mx16
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYM76V4M655HGLT6-8
HYM76V4M655HGLT6-P
HYM76V4M655HGLT6-S
HYM76V4M655HGT6-P
HYM76V4M655HGT6-S
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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KMM372F404CS
KMM372F404CS
4Mx16
KMM372F404C
4Mx72bits
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372V804CS
KMM372V804CS
4Mx16
KMM372V804C
8Mx72bits
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits
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KMM374F804CS1
KMM374F804CS1
4Mx16
8Mx72bits
4Mx16bits
400mil
300mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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Original
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8Mx64
PC133
4Mx16
HYM76V8M635HG
HYM76V8M635AT6
8Mx64bits
4Mx16bits
400mil
54pin
168pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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Original
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4Mx64
PC133
4Mx16
HYM76V4M635HG
HYM76V4M635HGT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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PDF
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KMM372F804BS
Abstract: No abstract text available
Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372F804BS
KMM372F804BS
4Mx16
KMM372F804B
8Mx72bits
KMM372F804B
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372V804BS DRAM MODULE KMM372V804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372V804BS
KMM372V804BS
4Mx16
KMM372V804B
8Mx72bits
KMM372V804B
4Mx16bits
400mil
168-pin
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PDF
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KMM372F404BS
Abstract: No abstract text available
Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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KMM372F404BS
KMM372F404BS
4Mx16
KMM372F404B
4Mx72bits
KMM372F404B
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits
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M372V0405DT0-C
M372V0405DT0-C
4Mx16
4Mx72bits
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits
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KMM366F40
4Mx16,
4Mx64bits
4Mx16bits
400mil
168-pin
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PDF
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K4E641612D-T
Abstract: No abstract text available
Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs
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M374F0405DT1-C
M374F0405DT1-C
4Mx16
4Mx72bits
4Mx16bits
300mil
168-pin
K4E641612D-T
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PDF
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KMM5328000BSW
Abstract: No abstract text available
Text: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328000BSW/BSWG
KMM5328000BSW/BSWG
4Mx16,
KMM5328000B
8Mx32bits
KMM5328000B
4Mx16bits
72-pin
KMM5328000BSW
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PDF
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KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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4Mx64
PC133
4Mx16
HYM76V4635HGT6
HYM76V4635AT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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PDF
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KMM366F404BS1
Abstract: No abstract text available
Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits
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KMM366F40
4Mx16,
4Mx64bits
4Mx16bits
400mil
168-pin
KMM366F404BS1
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PDF
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KMM5328004BSW
Abstract: KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
KMM5328004BSW
KMM5328004BSWG
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PDF
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KMM5324004BSW
Abstract: KMM5324004BSWG
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
4Mx16,
KMM5324004B
4Mx32bits
KMM5324004B
4Mx16bits
72-pin
KMM5324004BSW
KMM5324004BSWG
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PDF
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HYNIX process code
Abstract: S08H hynix internal process code hynix module internal process code hym76v8m655hgt sdram dimm module hynix so 128 144
Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M655HG L T6 Series DESCRIPTION The Hynix HYM71V8M655HG(L)T6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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8Mx64
PC100
4Mx16
HYM76V8M655HG
HYM71V8M655HG
8Mx64bits
4Mx16bits
400mil
54pin
168pin
HYNIX process code
S08H
hynix internal process code
hynix module internal process code
hym76v8m655hgt
sdram dimm module hynix so 128 144
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series DESCRIPTION The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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Original
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4Mx64
PC133
4Mx16
HYM76V4M635HG
HYM76V4M635HGT6
4Mx64bits
4Mx16bits
400mil
54pin
168pin
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PDF
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HYM7V65801B BLTQ-10S BA
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series DESCRIPTION The Hyundai’ s HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP
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8Mx64
PC100
4Mx16
HYM7V65801B
8Mx64bits
4Mx16bits
400mil
54pin
144pin
HYM7V65801B BLTQ-10S BA
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin
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OCR Scan
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HYM76V4M655HG
4Mx64,
PC100
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYW6V4M655HG
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS
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OCR Scan
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KMM5368005ASW/ASWGEDO
KMM5368005ASW/ASWG
4Mx16
KMM5368005ASW
cycles/64ms
KMM5368005ASWG
1000mil)
KMM5368005A
8Mx36bits
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PDF
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EM009
Abstract: EM-009
Text: HYM76V8M635HG L T6 8Mx64, 4Mx16 based, PC133 DESCRIPTION The Hynix HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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OCR Scan
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HYM76V8M635HG
8Mx64,
4Mx16
PC133
HYM76V8M635AT6
8Mx64bits
4Mx16bits
400mil
54pin
168pin
EM009
EM-009
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PDF
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