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    4M DRAM EDO Search Results

    4M DRAM EDO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    4M DRAM EDO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A43L4616

    Abstract: RA12
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz 133Mhz A43L4616 RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz PDF

    UG44W6446HSG

    Abstract: No abstract text available
    Text: UG44W644 8 6HSG Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 4 pcs 4M x 16 DRAM with LVTTL, 4K & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM


    Original     		UG44W644 144-Pin UG44W6446HSG PDF

    DQ60-DQ63

    Abstract: gu50
    Text: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte


    Original     		64-Bit 72-Bit HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin V4045 GU-60 HYM64 DQ60-DQ63 gu50 PDF

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11217-1E MEMORY CMOS 4M x 64 FAST PAGE MODE DRAM MODULE MB8504D064AA-60/-70 CMOS 4M × 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module


    Original     		DS05-11217-1E MB8504D064AA-60/-70 MB8504D064AA MB8117400A 168-pad F9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG54W7446HK S G 32M Bytes (4M x 72) DRAM 168Pin DIMM based on 4M x 16 / 4M x 4 General Description Features The UG54W7446HK(S)G is a 4,194,304 bits by 72 DRAM module With ECC. The UG54W7446HK(S)G is assembled using 4 pcs of 4Mx16 4K refresh DRAMs in 50-pin SOJ/TSOP


    Original     		UG54W7446HK 168Pin 4Mx16 50-pin 100Max 54Max) 200Max PDF

    chip18

    Abstract: MB85317A
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11204-1E MEMORY CMOS 4M x 72 Bit FAST PAGE MODE DRAM MODULE MB85317A-60/-70 CMOS 4M × 72 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting


    Original     		DS05-11204-1E MB85317A-60/-70 MB85317A MB8116400A 168-pad F9703 chip18 PDF

    SL32

    Abstract: SL32S6C4M4E-A60C edo dram 60ns 72-pin simm
    Text: SL32 S/T 6C4M4E-A60C 4M X 32 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL32(S/T)6C4M4E-A60C is a 4M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).


    Original     		6C4M4E-A60C 72-Pin 6C4M4E-A60C 50-pin 400-mil 104ns cycles/64ms A0-A11 BDQ16-23 BDQ8-15 SL32 SL32S6C4M4E-A60C edo dram 60ns 72-pin simm PDF

    SO-DIMM

    Abstract: SL32D6C4M4E-A60V 72-Pin SO-DIMM SL32D6C4M4E-A50V
    Text: SL32D6C4M4E-AxxV 4M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D6C4M4E-AxxV is a 4Mx 32 bits Dynamic RAM (DRAM) Small Outline-Dual Inline Memory Module (SODIMM). This module consists of two CMOS 4M x 16 bits DRAMs


    Original     		SL32D6C4M4E-AxxV SL32D6C4M4E-AxxV 50-pin 400-mil 72-pin -A50V -A60V 114ns DQ8-15 A0-A11 SO-DIMM SL32D6C4M4E-A60V 72-Pin SO-DIMM SL32D6C4M4E-A50V PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    Original     		64-Bit 72-Bit HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin V4045 GU-60 HYM64 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG54E6424GJ T G-6XC Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode buffered DIMM based on 16 pcs 4M x 4 DRAM & 2 pcs buffers with LVTTL, 2K Refresh PIN ASSIGNMENT (Front View) 168-Pin DIMM FEATURES Pr


    Original     		UG54E6424GJ 1000mil) 118DIA PDF

    72-Pin SO-DIMM

    Abstract: edge connector 22 pin DQ26
    Text: SL32D4B4M2E-A60V 4M X 32 Bits DRAM 72-Pin SO-DIMM EDO Memory Module FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL32D4B4M2E-A60V is a 4M x 32 bits Dynamic RAM DRAM Small Outline Dual Inline Memory Module (SODIMM) . This module consists of eight CMOS 4M x 4 bits DRAMs


    Original     		SL32D4B4M2E-A60V 72-Pin SL32D4B4M2E-A60V 24-pin 104ns cycles/32ms A0-A10 72-Pin SO-DIMM edge connector 22 pin DQ26 PDF

    72-Pin SO-DIMM

    Abstract: edge connector 22 pin SO-DIMM
    Text: SL32D4B4M2E-A60 4M X 32 Bits DRAM 72-Pin SO-DIMM EDO Memory Module FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL32D4B4M2E-A60 is a 4M x 32 bits Dynamic RAM DRAM Small Outline Dual Inline Memory Module (SODIMM) . This module consists of eight CMOS 4M x 4 bits DRAMs


    Original     		SL32D4B4M2E-A60 72-Pin SL32D4B4M2E-A60 24-pin 104ns cycles/32ms A0-A10 72-Pin SO-DIMM edge connector 22 pin SO-DIMM PDF

    HYM5V64414

    Abstract: HV51V17404A HYM5V64414AC
    Text: -HYUNDAI HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE -with EXTENDED DATA OUT DESCRIPTION TheHYM5V64414A is a 4M x 64-bit EDO m ode CMOS DRAM mod ule consisting of sixteen HY51V17404A in 24/26


    OCR Scan     		HYM5V64414A 64-bit HV51V17404A HYM5V64414AKG/ATKG/ASLKG/ASLTKG OOS4CI13> GDDSR31 6-10-APR9S HYM5V64414 HYM5V64414AC PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F40 1 0B is a 4M x72bits Dynamic • Part Identification


    OCR Scan     		KMM372F400BK/BS KMM372F41OBK/BS KMM372F41 KMM372F40 x72bits 372F400BK cycles/64m 372F400BS PDF

    44C4104

    Abstract: No abstract text available
    Text: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM53240 1 04CK is a 4M x32bits RAM high density memory


    OCR Scan     		KMM53240 x32bits KMM5324004CK/CKG KMM5324104CK/CKG KMM5324004CK/CKG KMM5324104CK/CKG 5324004CK cycles/64m 5324004CKG 44C4104 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72V4005GU-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •


    OCR Scan     		64-Bit 72-Bit 168pin HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72V4005GU-50/-60/-70 HYM72V4045GU-50/-60/-70 V4005/45GU-50/-60/-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS, INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic


    OCR Scan     		EDI4164MEV-RP egx16 cydes/64m pr64M EV50SI 4164M EV60SI EDI4164MEV70SI EDI4164MEV-RP PDF

    44C4104

    Abstract: No abstract text available
    Text: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KM M 53240 1 04CK is a 4M x32bits RAM high density memory


    OCR Scan     		KMM5324004CK/CKG KMM5324104CK/CKG KMM5324104CK/CKG x32bits 5324004CK cycles/64m 5324004CKG 24-pin 44C4104 PDF

    EDI4164MEV50SM

    Abstract: ed09 EDI4164MEV-RP Edd 44 EDI4164MEV60SM EDI4164MEV60SI EDI4164MEV
    Text: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS. INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic


    OCR Scan     		EDI4164MEV-RP 4Megx16 cycles/64ms 4Mx16 EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI 01581USA EDI4164MEV50SM ed09 EDI4164MEV-RP Edd 44 EDI4164MEV PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •


    OCR Scan     		64-Bit 72-Bit HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin B235bD5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404AS1 -L KMM466F404AS1-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Sam sung KM M 466F404AS1-L is a 4M x64bits Dynamic RAM high density KM M 466F404A S1-L m em ory


    OCR Scan     		KMM466F404AS1 KMM466F404AS1-L 4Mx16, 466F404AS1-L x64bits x16bits 466F404A cycles/128m PDF

    HYM64V4045GU50

    Abstract: GU50
    Text: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    OCR Scan     		64-Bit 72-Bit 168pin HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 HYM64 V4005/45GU-50/-60 L-DIM-168-12 HYM64V4045GU50 GU50 PDF

    M404A

    Abstract: No abstract text available
    Text: V7SH VM43217400D.VM83217400D 4M,8Mx32-Bit Dynamic RAM Module Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM


    OCR Scan     		VM43217400D 50/60ns VM43217400D VM83217400D 8Mx32-Bit 32-bit VG2617400D) M404A PDF