Untitled
Abstract: No abstract text available
Text: DRAM MODULE 466F404AS1 -L 466F404AS1-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Sam sung KM M 466F404AS1-L is a 4M x64bits Dynamic RAM high density KM M 466F404A S1-L m em ory
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KMM466F404AS1
KMM466F404AS1-L
4Mx16,
466F404AS1-L
x64bits
x16bits
466F404A
cycles/128m
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Untitled
Abstract: No abstract text available
Text: Preliminary 466F404AS-L DRAM MODULE 466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung 466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM466F404AS-L
KMM466F404AS-L
4Mx64
4Mx16,
466F404AS-L
cycles/128ms,
1000mil)
DDBE733
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .
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KMM466F404BS2-L
4Mx64
4Mx16
466F404AS1-Lto
KMM466F404BS2-L
466F404AS2-L
4Mx16,
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM466F404BS1 -L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KMM466F404BS1 -L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters t Changed the parameter t c a c p (access c a c (access ELECTRONICS
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KMM466F404BS1
4Mx64
4Mx16
KMM466F404AS1-L
4Mx16,
466F404AS1-L
4Mx64bits
4Mx16bits
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KM416V4104AS
Abstract: No abstract text available
Text: 466F404AS1-L ELECTRONICS DRAM Module 466F404AS1 -L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung 466F404AS1-L is a 4M bit x 64 • Part Identification Dynamic RAM high density memory module. The
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KMM466F404AS1-L
KMM466F404AS1
4Mx64
4Mx16,
KMM466F404AS1-L
4Mx16bit
50-pin
400mil
144-pin
KM416V4104AS
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