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    4KX1 STATIC RAM Search Results

    4KX1 STATIC RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    4KX1 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    block diagram 8 bit booth multiplier

    Abstract: 4kx4 ram ProASIC3 AC323 32 bit adder brent kung adder A500K hamming code FPGA sense amplifier bitline memory device
    Text: Application Note AC323 Dynamic Power Reduction in Flash FPGAs Introduction Due to the dramatic increase in portable and battery-operated applications, lower power consumption has become a necessity in order to prolong battery life. Power consumption is an important part of the


    Original     		PDF AC323 block diagram 8 bit booth multiplier 4kx4 ram ProASIC3 AC323 32 bit adder brent kung adder A500K hamming code FPGA sense amplifier bitline memory device

    4kx4 ram

    Abstract: AC323 A500K wallace tree multiplier
    Text: Application Note AC323 Dynamic Power Reduction in Flash FPGAs Introduction Due to the dramatic increase in portable and battery-operated applications, lower power consumption has become a necessity in order to prolong battery life. Power consumption is an important part of the


    Original     		PDF AC323 4kx4 ram AC323 A500K wallace tree multiplier

    sje 607

    Abstract: SUNYO hamming code FPGA IGLOO2 COOLRUNNER-II examples 8-bit brentkung adder
    Text: Power-Aware FPGA Design by Hichem Belhadj, Vishal Aggrawal, Ajay Pradhan, and Amal Zerrouki February 2009 Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    QPSK using xilinx

    Abstract: cable tv using internet block Diagram ofdm modem chip encoder OFDM BY XILINX satellite modem FPGA PQ208 pb sram 256x16* STATIC RAM "Western Digital" pci standards Tv set top BOX Diagram
    Text: Spartan-II FPGAs in Set-Top Boxes - Customer Tutorial April 2000 File Number Here Agenda Introduction Market Overview Spartan-II Set-Top Box Solutions Programmable ASSP Summary Xilinx at Work in Hot New Technologies ® www.xilinx.com Overview Xilinx - The Industry Leader in FPGAs/CPLDs


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    256x16* STATIC RAM

    Abstract: AZ 280 memory 4Kx4 rom DS234
    Text: Single-Port Block Memory v5.0 DS234 v0.1 November 1, 2002 Product Specification Features • Fully synchronous drop-in module for Virtex , Virtex-II, Virtex-II Pro™, Spartan™-II, Spartan-IIE, and Spartan-3 FPGAs • Supports all three Virtex-II write mode options:


    Original     		PDF DS234 xcv800 xcv1000 xcv50E xcv100E xcv200E xcv300R xcv400E xcv600E xcv1000E 256x16* STATIC RAM AZ 280 memory 4Kx4 rom DS234

    8kx1 RAM

    Abstract: 8kx1
    Text: Application Note Axcelerator Family Memory Blocks I n tro du ct i on blocks in each device depends on the number of core tiles. For example, in an AX125 device with a single core tile, the number of available memory blocks is 4, while the AX500, with four core tiles, has 16 memory blocks. Note that the


    Original     		PDF AX125) AX2000) 128x36, 256x18, 512x9, 8kx1 RAM 8kx1

    8kx1 RAM

    Abstract: AX125 AX2000 AC164
    Text: Application Note AC164 Axcelerator Family Memory Blocks I n tro du ct i on blocks in each device depends on the number of core tiles. For example, in an AX125 device with a single core tile, the number of available memory blocks is 4, while the AX500, with four core tiles, has 16 memory blocks. Note that the


    Original     		PDF AC164 AX125 AX500, AX250 AX125) AX2000) 8kx1 RAM AX2000 AC164

    256x16* STATIC RAM

    Abstract: 32Kx1 false RAMB16 XC2S100 XC2S15 XC2S150 XC2S200 XC2S30 XC2S50
    Text: Single-Port Block Memory Core v6.2 DS234 April 28, 2005 Features • Fully synchronous drop-in module for Virtex , Virtex-II, Virtex-II Pro, Virtex-4, Spartan™-II, Spartan-IIE, Spartan-3, and Spartan-3E FPGAs • Supports all three Virtex-II write mode options:


    Original     		PDF DS234 256x16* STATIC RAM 32Kx1 false RAMB16 XC2S100 XC2S15 XC2S150 XC2S200 XC2S30 XC2S50

    Untitled

    Abstract: No abstract text available
    Text: Dual-Port Block Memory v5.0 DS235 v0.1 November 1, 2002 Product Specification Features • Drop-in module for Virtex , Virtex-E, Virtex-II, Virtex-II Pro™, Spartan™-II, Spartan-IIE, and Spartan-3 FPGAs • Supports all three Virtex-II write mode options:


    Original     		PDF DS235 xcv50E xcv100E xcv200E xcv300R xcv400E xcv600E xcv1000E xcv1600E xcv2000E

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


    OCR Scan     		PDF IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80

    4kx1 static ram

    Abstract: MS1203 IMS1203A-25M IMS1203M IMS1203M-25 IMS1203M-2S IMS1203M-35 IMS1203M-45 1203M
    Text: IM S 1 2 0 3 M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1203M is a high speed CMOS 4Kx1 static RAM processed in full compliance to MIL-STD883C. The IMS1203M provides performance enhance­ ments with the additional CMOS benefits of lower power


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mil IMS1203M MIL-STD-883C. 1203S-25M IMS1203A-25M 4kx1 static ram MS1203 IMS1203A-25M IMS1203M-25 IMS1203M-2S IMS1203M-35 IMS1203M-45 1203M

    A1t smd

    Abstract: IMS1203M sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold
    Text: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C ÏTüTIOS* D ESCR IPTIO N FE A TU R ES The IN M O S IM S 1203M is a high speed C M O S 4Kx1 static RAM processed in full compliance to MIL-STD883C . The IM S1203M provides performance enhance­


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mii MIL-STD-883C IMS1203M 254mm A1t smd sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold

    Untitled

    Abstract: No abstract text available
    Text: Emm semi FEA TU R E S • Single +5V Power Supply ■ 4Kx1 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Separate Data In and Data Out


    OCR Scan     		PDF 41024x1 Number4801 40961-bit

    Untitled

    Abstract: No abstract text available
    Text: STATIC CMOS RAMs, COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE DESCRIPTION PART TAA ns PACKAGES/PINS SIZE NUMBER P J S PP 22 P93U422 35 24 256x4 1K P4C422 22 10/12/15/25/35 24 256x4 1K P4C147 18 10/12/15/20/25 4Kx1 w/Separate I/O 4K P4C148 18 10/12/15/20/25


    OCR Scan     		PDF P93U422 256x4 P4C422 P4C147 P4C148 P4C149 P4C150 P4C168 P4C169

    Z80A CPU

    Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
    Text: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit


    OCR Scan     		PDF 1024x1 2316E 512x8 4096x1 Z80/Z80A Z80A CPU Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    dram zip 256kx16

    Abstract: I8833C
    Text: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM irnos DESCRIPTION FEATURES INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 4K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times Fully TTL Compatible


    OCR Scan     		PDF IMS1203 300-mil IMS1203

    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


    OCR Scan     		PDF 32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420

    IMS1203M

    Abstract: IMS1203P-25 IMS1203P-35 IMS1203S-25 IMS1203P-45
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM m o s DESCRIPTION FEATURES INMOS' Very High Speed CMOS Advanced Process - 1.6 Micron Design Rules 4K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times Fully TTL Compatible


    OCR Scan     		PDF IMS1203 300-mil IMS1203 IMS1203M IMS1203P-25 IMS1203P-35 IMS1203S-25 IMS1203P-45

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


    OCR Scan     		PDF EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256

    Untitled

    Abstract: No abstract text available
    Text: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C 17103« FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules •Specifications guaranteed over full military temperature range -55° C to + 125“ C


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mil IMS1203M MIL-STD883C. 254mm

    4kx1 static ram

    Abstract: MS-1203 S1203
    Text: „ I M : •■■■■■Si ■■■■ Mm OS* cmos High Performance 4K x 1 Static RAM MIL-STD-883C FEA TU R E S D E SCR IPTIO N • IN M O S' Very High Speed C M OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military


    OCR Scan     		PDF 18-Pin, 300-mil MIL-STD-883C 1203M IL-STD883C S1203M a203M 254mm 4kx1 static ram MS-1203 S1203

    Untitled

    Abstract: No abstract text available
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM mos FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 4 K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1203 300-mil IMS1203