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    4K X 1 DRAM Search Results

    4K X 1 DRAM Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    4K X 1 DRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: L4B7SE5 □ Q 4f l cì 7 3 M5T NECE NEC 16M DRAMs cont ORGANIZATION FEATURES PACKAGE 2M x 8 Fast-page access, 4K refresh, self-refresh 2M x 8 2M x 8 2M x 8 1 M x 16 1 M x 16 1 M x 16 1M x 16 Fast-page access, 4K refresh, self-refresh Hyper-page access, 4K refresh


    OCR Scan     		400-mil) uPD4216800LE-60 uPD4216800LE-70 uPD4216800LE-80 iPD4216800LE PD4216800G5 lPD4216805LE PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)


    OCR Scan     		HB56EW472ETC-A HB56EW872ETK-A 32/64MB 72-bit, ADE-203-844 HB56EW472ETC-A, 64-Mbit PDF

    CAPACITOR 64 680 4J

    Abstract: 11DQ12 8dq9 Nippon capacitors
    Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)


    OCR Scan     		HB56EW472ETC-A HB56EW872ETK-A 32/64MB 72-bit, ADE-203-844 HB56EW 472ETC-A, 872ETK-A CAPACITOR 64 680 4J 11DQ12 8dq9 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: 8K x 8 4K x 8 CMOS FourPort RAM MODULE PRELIMINARY IDT7MB1041 IDT7MB1042 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 64K /32K -bit C M O S FourPort RAM Modules • 8K x 8 ID T 7 M B 1 0 4 1 or 4K x 8 (ID T 7 M B 1 042) option


    OCR Scan     		IDT7MB1041 IDT7MB1042 100ns 120-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56HW464ETNC-5/6, HB56HW864ETNK-5/6 32/64MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4k Refresh, 1 Bank Module 8-Mword X 64-bit, 4k Refresh, 2 Bank Module 4/8 pcs of 4M X 16 components HITACHI ADE-203-901A (Z) Rev. 1.0 Apr. 14, 1998 Description The HB56HW464ETNC, HB56HW864ETNK belong to 8-byte DIMM (Dual in-line Memory Module)


    OCR Scan     		HB56HW464ETNC-5/6, HB56HW864ETNK-5/6 32/64MB 64-bit, ADE-203-901A HB56HW464ETNC, HB56HW864ETNK HB56HW464ETNC 64Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366F203CK KMM366F213CK DRAM MODULE KMM366F203CK & KMM366F213CK EDO Mode without buffer 2M x 64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3CK is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung


    Original     		KMM366F203CK KMM366F213CK KMM366F213CK KMM366F20 300mil 168-pin 100Min PDF

    NEC c

    Abstract: No abstract text available
    Text: Part Number 64M DRAM 1 x 4 / x 8 /¿PD4264 4 00L E - A 70 NEC CMOS Dynamic RAM —^ 64M Dynamic RAM, Refresh Cycle — 6 4 : 8K Refresh 65 : 4K Refresh O :x 4 8 : x8 Fast Page M o d : TSOP (II)(400mil)


    OCR Scan     		uPD4264400LE-A70 400mil) jUPD4264 300mil) /tPD42 NEC c PDF

    KMM366F213BK

    Abstract: KM48V2104
    Text: KMM366F203BK KMM366F213BK DRAM MODULE KMM366F203BK & KMM366F213BK EDO Mode without buffer 2M x 64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3B is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung


    Original     		KMM366F203BK KMM366F213BK KMM366F213BK KMM366F20 300mil 168-pin KM48V2104 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216E3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16M x 1


    Original     		UG216E3654HKG 72Pin 16Mx4 400mil 300mil 1000mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO,1M x 1 6 ,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50n CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576


    OCR Scan     		MCM516165BV MCM516165BV) MCM518165BV) MCM518165BV MCM51 xxxxBV-70 MCM516165BV-70 MCM518165BV PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216C3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs in 400mil Package and 4 pcs of 16M x 1 DRAMs in


    Original     		UG216C3654HKG 72Pin 16Mx4 400mil 300mil 1000mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216E3661GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3661GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3661GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package mounted on 72 Pin


    Original     		UG216E3661GJG 72Pin 16Mx1 1250mil) PDF

    we 510

    Abstract: No abstract text available
    Text: UG216E3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin


    Original     		UG216E3261GJG 72Pin 16Mx1 1250mil) we 510 PDF

    u18 312

    Abstract: we 510
    Text: UG216E3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216E3211GJG 72Pin 16Mx1 ABT16 1250mil) u18 312 we 510 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216C3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAM in SOJ Package and 2 pcs of ABT16


    Original     		UG216C3611GJG 72Pin 16Mx1 ABT16 1250mil) PDF

    we 510

    Abstract: ras 510 UG216C3261GJG 45388
    Text: UG216C3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin


    Original     		UG216C3261GJG 72Pin 16Mx1 we 510 ras 510 45388 PDF

    ras 510

    Abstract: we 510 UG216C3211GJG
    Text: UG216C3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216C3211GJG 72Pin 16Mx1 ABT16 ras 510 we 510 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216E3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216E3611GJG 72Pin 16Mx1 ABT16 1250mil) PDF

    UG216C3221GJG

    Abstract: No abstract text available
    Text: UG216C3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216C3221GJG 72Pin 16Mx1 ABT16 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216E3621GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3621GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3621GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216E3621GJG 72Pin 16Mx1 ABT16 1500mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216C3661GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3661GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3661GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package mounted on 72 Pin


    Original     		UG216C3661GJG 72Pin 16Mx1 1250mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216E3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216E3221GJG 72Pin 16Mx1 ABT16 1500mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG216C3621GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3621GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3621GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		UG216C3621GJG 72Pin 16Mx1 ABT16 1500mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes


    Original     		F59L1G81A 200us it/528 PDF