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    4GB NAND FLASH SAMSUNG Search Results

    4GB NAND FLASH SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    4GB NAND FLASH SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    MCP 256M nand samsung mobile DDR

    Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
    Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF KA100O015E-BJTT A10/AP MCP 256M nand samsung mobile DDR MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D

    K9K8G08U0D

    Abstract: K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9K8G08U1D K9F4G08U0D K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB
    Text: Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB

    K9K8G08U0D

    Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
    Text: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    16GB Nand flash dual channel

    Abstract: hynix nand flash samsung 8Gb nand flash Hynix 64Gb Nand flash micron DDR3 SODIMM address mapping edge connector nand flash HYNIX MLC dms-59 WD3RE04GX818 hynix nand flash 2gb wd2ue01Gx818
    Text: ourl ocat i ons FLASH EMBEDDED PRODUCTS DRAM MODULES Wi nt ecI ndust r i esBr anches USA LosAngel es,CA Nor cr oss,Geor gi a Pi scat away,New Jer sey Eur ope Br aunschwei g,Ger many Asi a Tai pei ,Tai wan Kowl oon,HongKong Shenzhen,Chi na Wi nt ecI ndust r


    Original     		PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    PHISON

    Abstract: PS2153 PS2151
    Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel: 886-3-5833899-3001 or 1001 or 1005 Fax: 886-3-5833666 Email : sales@phison.com kspua@phison.com Phison Electronics Corporation USB 2.0 Flash Controller Specification


    Original     		PDF PS2153 S-05004 PHISON PS2153 PS2151

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    phison

    Abstract: Phison Electronics LGA-52 hynix nand flash 1.8v 4Gb uP8051 spi hynix nand flash 2gb LGA52 hynix nand 512M 8GB MODULE MLC phison nand flash
    Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899-3001 or 1001 or 1005 Fax： 886-3-5833666 Email：Sales@phison.com Phison Electronics Corporation version 1.1 All rights are strictly reserved. Any portion of this paper shall not be reproduced, copied, or


    Original     		PDF S-05007 phison Phison Electronics LGA-52 hynix nand flash 1.8v 4Gb uP8051 spi hynix nand flash 2gb LGA52 hynix nand 512M 8GB MODULE MLC phison nand flash

    K9F4G08 512MB NAND Flash

    Abstract: Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash
    Text: S3F49FAX FLASH Controllers for Compact Flash / PC Card / IDE Disk REFERENCE GUIDE MANUAL HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) REFERENCE GUIDE MANUAL S3F49FAX Table of Contents 1.1


    Original     		PDF S3F49FAX S3F49FAX K9F4G08 512MB NAND Flash Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    KLM4G1FE3B-B001

    Abstract: KLM8G2FE3B-B001 samsung eMMC 4.5 Samsung eMMC 4.41 KLMAG4FE3B-A001 emmc 5.0 KLM4G1FE "Manufacturer ID" eMMC KLM4G1 emmc 4.5
    Text: Rev. 1.0, Oct. 2011 KLMxGxFE3B-x00x Samsung e•MMC Product family e.MMC 4.41 Specification compatibility datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF KLMxGxFE3B-x00x KLM4G1FE3B-B001 KLM8G2FE3B-B001 samsung eMMC 4.5 Samsung eMMC 4.41 KLMAG4FE3B-A001 emmc 5.0 KLM4G1FE "Manufacturer ID" eMMC KLM4G1 emmc 4.5

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DISK PRELIMINARY AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG Solid State Disk On Chip SSDoC FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported - PIO Mode 4 supported - MWDMA Mode 2 supported


    Original     		PDF AS3SSD16GB5PBG

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		PDF 108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    16GB Nand flash dual channel

    Abstract: Application Note for NAND Flash Memory, Rev. 2.0, samsung 16GB Nand flash sata to pata chips capacitor AA7 mwdma samsung 8Gb nand flash samsung sata CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram samsung IDED10
    Text: AUSTIN SEMICONDUCTOR, INC. SOLID PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip SSDoC ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported


    Original     		PDF AS3SSD16GB5PBG 16GB Nand flash dual channel Application Note for NAND Flash Memory, Rev. 2.0, samsung 16GB Nand flash sata to pata chips capacitor AA7 mwdma samsung 8Gb nand flash samsung sata CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram samsung IDED10

    16GB Nand flash dual channel

    Abstract: Samsung 16GB Nand flash AB22-AB23
    Text: AUSTIN SEMICONDUCTOR, INC. SOLID PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip SSDoC ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported


    Original     		PDF AS3SSD16GB5PBG AS3SSD16GB5PBG 16GB Nand flash dual channel Samsung 16GB Nand flash AB22-AB23

    A104

    Abstract: AA10 AS3SSD16GB5PBG ata commands 16GB Nand flash dual channel flash chip 8gb silicon power 4GB AB22-AB23
    Text: SOLID STATE DISK PRELIMINARY Solid State Disk On Chip SSDoC AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG Not recommended for new designs. Contact Micross Marketing & Sales to discuss availability. The new microSSD is the recommended replacement part. FEATURES


    Original     		PDF AS3SSD16GB5PBG A104 AA10 AS3SSD16GB5PBG ata commands 16GB Nand flash dual channel flash chip 8gb silicon power 4GB AB22-AB23

    16GB Nand flash dual channel

    Abstract: samsung 16GB Nand flash AUSTIN SEMICONDUCTOR pata chips ssd hdd device AB22-AB23 AC18-AC19
    Text: AUSTIN SEMICONDUCTOR, INC. SOLID PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip SSDoC ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported


    Original     		PDF AS3SSD16GB5PBG AS3SSD16GB5PBG 16GB Nand flash dual channel samsung 16GB Nand flash AUSTIN SEMICONDUCTOR pata chips ssd hdd device AB22-AB23 AC18-AC19

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand