Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4BANKS Search Results

    4BANKS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin

    b1a12

    Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
    Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit


    Original     		PDF PC133/100 M390S2950MTU M390S2950MTU 128Mx72 128Mx4, 128Mx4 400mil 18bits b1a12 M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design

    M374S6453CTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M374S6453CTS M374S6453CTS 64Mx72 32Mx8, 400mil 168-pin

    M390S3320DT1-C7A

    Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range


    Original     		PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, M390S3320DT1-C7C 24-pin 133MHz M390S3320DT1-C7A M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    M374S3253ATS

    Abstract: M374S3253CTU
    Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S3253CTU PC133/PC100 M374S3253ATS 32Mx72 32Mx8, M374S3253CTU 400mil 168-pin

    M390S2858DTU

    Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
    Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked


    Original     		PDF M390S2858DTU PC133/PC100 M390S2858DTU 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    M374S1623DT0

    Abstract: M374S1623DT0-C7A
    Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M374S1623DT0 PC133 M374S1623DT0 16Mx72 400mil M374S1623DT0-C7A

    K4S561632C

    Abstract: M464S1654CTS
    Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with


    Original     		PDF M464S1654CTS PC133/PC100 M464S1654CTS 16Mx64 16Mx16, 144-pin 100MHz K4S561632C

    b1a12

    Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
    Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit


    Original     		PDF M390S6450DTU PC133/PC100 M390S6450DTU 64Mx72 64Mx4, 64Mx4 400mil 18bits b1a12 M390S6450DTU-C7A M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design

    M390S3253CTU

    Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
    Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous


    Original     		PDF M390S3253CTU PC133/PC100 M390S3253CTU 32Mx72 32Mx8, 32Mx8 400mil 18-bits M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin

    SM32200K

    Abstract: IS42SM32200K
    Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 200K-6BLI IS42SM32200K-75BLI 90-ball -40oC 2Mx32 IS42RM32200K-6BLI SM32200K IS42SM32200K

    IS42RM16160E

    Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
    Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E IS42VM16160E-75BLI IS42VM16160E is42vm16160

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    HY57V281620A

    Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI

    M366S0824ET0

    Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
    Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S0824ET0 M366S0824ET0 8Mx64 4Mx16, 400mil 168-pin M366S0824ET0-C1H M366S0824ET0-C1L

    HY57V56820BT-H

    Abstract: HY57V56820B HY57V56820BT-6 HY57V56820BT-K
    Text: HY57V12820 L T 4 Banks x 16M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 16,777,216x8.


    Original     		PDF HY57V12820 HY57V56820B 512-Mbit 216x8. 400mil 54pin HY57V56820BT-H HY57V56820BT-6 HY57V56820BT-K

    nanya

    Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
    Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:


    Original     		PDF NT128S64VH4A0GM 128MB 16Mx64 16Mx16, 13/9/2TECHNOLOGY 010Max nanya NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B

    HY57V561620T

    Abstract: HY57V561620
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of


    Original     		PDF HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin HY57V561620T