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    21DQ03 Search Results

    21DQ03 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    21DQ03 Unknown Original PDF
    21DQ03 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    21DQ03 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    21DQ03 Nihon Inter Electronics SCHOTTKY BARRIER DIODE Scan PDF
    21DQ03L Nihon Inter Electronics 30 V, diode Original PDF
    21DQ03L Nihon Inter Electronics SCHOTTKY BARRIER DIODE Scan PDF
    21DQ03TR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    21DQ03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 30 Volts 1.7A Avg. 21DQ03L SBD •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷


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    21DQ03L PDF

    21DQ03L

    Abstract: No abstract text available
    Text: 1.7A Avg. 30 Volts SBD 21DQ03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷


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    21DQ03L 21DQ03L PDF

    21DQ03L

    Abstract: No abstract text available
    Text: SBD Type : 21D 21DQ03L OUTLINE DRAWING FEATURES * Miniature Size * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings


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    21DQ03L 30volts 100volts 21DQ03L PDF

    21DQ03L

    Abstract: No abstract text available
    Text: SBD Type : 21D 21DQ03L OUTLINE DRAWING FEATURES * Miniature Size * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings


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    21DQ03L 30volts 100volts 21DQ03L PDF

    21DQ03

    Abstract: No abstract text available
    Text: 21DQ03 - 21DQ04 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 30 - 40 Volts IO : 2.0 Amperes D2 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low cost 1.00 25.4


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    21DQ03 21DQ04 UL94V-O MIL-STD-202, PDF

    3PHA 20

    Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
    Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は,次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様


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    TYPE/SOD-123 10DDA EP05DA EP05DA40 10JDA 10EDA 10EDB EC10DS 3PHA 20 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045 PDF

    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    21DQ03

    Abstract: 21DQ04
    Text: SCHOTTKY BARRIER DIODE 21DQ03 21DQ04 1.9A/30—40V FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volts Types Available o 52mm Inside Tape Spacing Package Available Approx. Net Weight: 0.38 Grams


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    21DQ03 21DQ04 21DQ0 bbl5123 21DQ04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 2a / s o v 21DQ03L FEATURES o M in iatu re Size o E x tre m e ly L ow F o rw a rd V oltage D rop o L ow P o w er Loss, H igh E fficiency o H igh S urge C apability 0 20 V olts th ru 100 V olts T y p es A vailable 0 52m m Inside T a p e S pacing P a c k a g e A vailiable


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    21DQ03L 21DQ03L PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 21DQ03 21DQ04 1.9A/30— 40V FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability o 20 Volts thru 100 Volts Types Available o 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS


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    21DQ03 21DQ04 21DQ0 bbl5123 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 21DQ03L 2a / s o v FEATURES o M iniature Size M üi§î d ia o E xtrem ely Low Forw ard V oltage Drop o Low Pow er Loss, High Efficiency 0.9C035 DIA 0.7C027) o High Surge Capability 0 2 0 V olts thru 100 Volts Types Available 26 1.02)


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    21DQ03L 9C035) 7C027) 10xi0m btlS123 DDD17Ã JUMC710H bblS123 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 21DQ03 21DQ04 1.9A/30— 40V FEA TUR ES « Miniature Size 0 Low Forward Voltage Drop 0 Low Power Loss, High Efficiency 0 High Surge Capability «20 Volts thru 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S


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    A/30-- 21DQ03 21DQ04 10x10mm PDF

    21dq

    Abstract: No abstract text available
    Text: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics


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    0D05041 11DQ03 11DQ05 21DQ03 31DQ03 31DQ05 11DQ04 11DQ06 21DQ04 31DQ04 21dq PDF

    50PQSA045

    Abstract: 21DQ10 50PHSA12 11EQS04 11DQ10 11EQS10 31DQ04 10EHA20 21dq03l 11DQ04
    Text: Latest Data sheets are available at URL : http://www.niec.to.jp/ f f * "fy"' - Mton Inter Electronics Corporation •FOREIGN SALES V The value would changed without notice. Printed in MARCH 2009 1-19-5 Nishi-Shinjuku.Meiho Bidg.#2 Shinjuku-ku, Tokyo 16 0-0 023 JA PA N


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    11EQS03L 11EQS04 11EQS06 11EQS10 10EHA20 11EQ04 11EQ06 11EQ10 11DQ03L 11DQ04 50PQSA045 21DQ10 50PHSA12 11DQ10 31DQ04 21dq03l PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    10jq030

    Abstract: 10jq100
    Text: INTERNATIONAL R E C T I F I E R HE D | Schottky Rectifiers 4355455 O O l Q D n 1 | t - o 3 - ' 3-1 1.1 T O 5 .5 AM PS Part Number • f AU @ T q VRWM VFM (V) (A) (°C) ' fm (A) 1.1 1.1 1.1 1.1 10JQ100 30 40 50 60 90 100 25 25 25 25 25 25 11DQ03 11DQ04


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    10JQ100 11DQ03 11DQ04 110Q05 110Q06 11DQ09 11DQ10 21DQ03 10JQ030 10JQ040 10jq030 10jq100 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    50SQ100

    Abstract: 80SQ045 8TQ090 31DQ10 10TQ030 10TQ035 21DQ03 D0204AR
    Text: Schottky Rectifiers International iori Rectifier Single Chip Devices 1.1-18 Am ps >F AV @ Tc VFM @ 'FM •FSM (1) >RM @ Tj - 125°C & Max. Tj totoH V r w M (mA) (V) (A) <°C) = 'F(AV) Tj = 100°C (V) (A) (A) <°C) Case Outline Number (8) 11DQ03 11DQ04 11DQ05


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    11DQ03 11DQ04 11DQ05 11DQ06 11DQ09 11DQ10 21DQ03 21DQ04 21DQ05 21DQ06 50SQ100 80SQ045 8TQ090 31DQ10 10TQ030 10TQ035 D0204AR PDF