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    4MX36 Price and Stock

    Gates 14MX-36S-20

    Belt Sprocket, Poly Chain GT2 Sprockets,14MM | Gates 14MX-36S-20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 14MX-36S-20 Bulk 1
    • 1 $244.41
    • 10 $232.19
    • 100 $207.75
    • 1000 $207.75
    • 10000 $207.75
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    Gates 14MX-36S-37

    Belt Sprocket, Poly Chain GT2 Sprockets,14MM | Gates 14MX-36S-37
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    RS 14MX-36S-37 Bulk 1
    • 1 $305.22
    • 10 $305.22
    • 100 $305.22
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    Martin Sprocket & Gear Inc PB14MX36S90

    Poly Chain Sprocket, MPC, rough stock bore, 14MM belt, 90MM belt width, 36 teet | Martin Sprocket & Gear PB14MX36S90
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PB14MX36S90 Bulk 6 Weeks 1
    • 1 $608.89
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    • 100 $608.89
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    Gates 14MX-36S-90

    Poly Chain GT Sprocket, 14MM | Gates 14MX-36S-90
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 14MX-36S-90 Bulk 3 Weeks 1
    • 1 $558.31
    • 10 $558.31
    • 100 $558.31
    • 1000 $558.31
    • 10000 $558.31
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    Gates 14MX-36S-68

    Belt Sprocket, Poly Chain GT2 Sprockets,14MM | Gates 14MX-36S-68
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 14MX-36S-68 Bulk 1
    • 1 $483.72
    • 10 $483.72
    • 100 $483.72
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    4MX36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5117404B

    Abstract: No abstract text available
    Text: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM536A814B 8Mx36 4Mx36-bit HY5117404B HYM536A814BM HYM536A814BMG 72-Pin

    4Mx4 dram simm

    Abstract: 4MX36 simm 72 pin edo
    Text: 4M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 364056ES52m09JB 72 Pin 4Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1


    Original     		PDF 364056ES52m09JB 4Mx36 72-pin DS592-05e 4Mx4 dram simm simm 72 pin edo

    4Mx4 dram simm

    Abstract: No abstract text available
    Text: 4M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364056-S52m09JB 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1 14


    Original     		PDF 364056-S52m09JB 4Mx36 72-pin DS592-05f 4Mx4 dram simm

    KMM5364003CSW

    Abstract: KMM5364003CSWG
    Text: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5364003CSW/CSWG 4Mx36 4Mx16 KMM5364003CSW/CSWG KMM5364003C 4Mx36bits KMM5364003C KMM5364003CSW KMM5364003CSWG

    KMM5364003BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


    Original     		PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG 4Mx16 KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003BSW

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM


    Original     		PDF M53640400DW0/DB0 M53640410DW0/DB0 M53640400DW0/DB0 M53640410DW0/DB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM


    Original     		PDF M53620400DW0/DB0 M53620410DW0/DB0 M53620400DW0/DB0 M53620410DW0/DB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    HY5117400B

    Abstract: HY514100A
    Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin

    HY5117404A

    Abstract: No abstract text available
    Text: HYM536A414A M-Series 4Mx36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414A is a 4M x 36-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1§ Þand 0.01§ Þdecoupling are mounted for


    Original     		PDF HYM536A414A 4Mx36-bit 36-bit HY5117404A HYM536A414AM/ASLM HYM536A414AMG/ASLMG DQ0-DQ35) 1CE16-10-APR95

    364006EQS4G04TF

    Abstract: No abstract text available
    Text: 4M x 36 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 364006EQS4G04TF 100 Pin 4Mx36 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61


    Original     		PDF 364006EQS4G04TF 4Mx36 4Mx16 256x8

    ic 74142

    Abstract: No abstract text available
    Text: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A


    OCR Scan     		PDF KMM5364003ASW/ASWG KMM5364003ASW/ASWG 4Mx16 KMM5364003A 4Mx36bits 4Mx16bits 72-pin KMM5364003ASW ic 74142

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


    OCR Scan     		PDF KMM5364103AK/AKG 4Mx36 KMM5364103AK 24-pin 20-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:


    OCR Scan     		PDF KMM5364000AH 4Mx36 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM5364003BK/BKG DRAM MODULE_KMM5364103BK/BKG KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung KMM53640 1 03BK is a 4M bit x 36


    OCR Scan     		PDF KMM5364003BK/BKG KMM5364103BK/BKG KMM5364103AK/AKG 4Mx36 300mil KMM53640 24-pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic HAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS


    OCR Scan     		PDF KMM53641OOAH 4Mx36 KMM5364100AH 24-pin 72-pin

    samsung pram

    Abstract: No abstract text available
    Text: PRAM MODULE / _16 Mega Byte 77 KMM5364000C/CG Fast Page Mode 4Mx36 DRAM SIMM Using 4Mx1 DRAM, 5V ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5364000C is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000C consists of thirty six CMOS


    OCR Scan     		PDF KMM5364000C/CG 4Mx36 KMM5364000C 110ns 130ns 150ns samsung pram

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5364000AH is a 4M bit x 36 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5364000AH 4Mx36 5364000AH 24-pin

    Untitled

    Abstract: No abstract text available
    Text: ^ H Y U N D A I • HYM536A414C M-Series > 4Mx36 bit EOO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A414C M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of nine HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM536A414C 4Mx36 4Mx36-bit HY5117404C HYM536A414CM HYM536A414CMG 72-Pin 256ms

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS


    OCR Scan     		PDF KMM53641OOAKH 4Mx36 KMM53641 24-pin 72-pin KMM5364100AKH

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5364100A/AG 4Mx36 364100A 24-pin 20-pin 72-pin KMM5364100A

    bas 33 equivalent

    Abstract: km44c4105bk EZ 720 kmm5364105bk
    Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 53640 1 05BK is a 4M bit x 36


    OCR Scan     		PDF KMM5364005BK/BKG KMM5364105BK/BKG KMM5364005BK/BKG KMM5364105BK/BKG 4Mx36 KMM53640 24-pin 28-pin 72-pin bas 33 equivalent km44c4105bk EZ 720 kmm5364105bk

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364000AKH Fast Page Mode P r e lim in a r v n R a m SIMM c i m m , 4K a \c n o f r o c h c:\/ 4Mx36 DRAM Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION p r e lim in a r y FEATURES • Performance Range: The Sam sung KM M 5364000AKH is a 4M bit x 36


    OCR Scan     		PDF 4Mx36 5364000AKH KMM5364000AKH 24-pin KMM53640If

    KM41C4000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS


    OCR Scan     		PDF KMM5364100A1 4Mx36 24-pin 20-pin 72-pin KM41C4000CJ