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    48N50 Search Results

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    48N50 Price and Stock

    Littelfuse Inc IXFK48N50

    MOSFET N-CH 500V 48A TO264AA
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    DigiKey IXFK48N50 Tube 1,007 1
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    RS IXFK48N50 Bulk 8 Weeks 25
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    IXYS Corporation IXFN48N50

    MOSFET N-CH 500V 48A SOT-227B
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    IXYS Corporation IXFN48N50Q

    MOSFET N-CH 500V 48A SOT-227B
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    IXYS Corporation IXFE48N50Q

    MOSFET N-CH 500V 41A SOT-227B
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    IXYS Corporation IXFK48N50Q

    MOSFET N-CH 500V 48A TO264AA
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    48N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    48N50 IXYS N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr: 500v, 48a Original PDF

    48N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    123B16

    Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM


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    44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q PDF

    44n50

    Abstract: 48N50
    Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30


    Original
    SMOS44/48N50D2, SMOS44/48N50D3 OT-227 5ID25 300us, 00A/us; 80A/us; 44n50 48N50 PDF

    48N50

    Abstract: 48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS on 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    44N50Q 48N50Q 44N50 48N50 OT-227 E153432 48N50 48N50Q 44N50 PDF

    48N50Q

    Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original
    ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q PDF

    44N50

    Abstract: 48N50 48N50Q ixys ixfk 44n50
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


    Original
    48N50Q 44N50Q 247TM 44N50 48N50 ixys ixfk 44n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original
    ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q: PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50


    Original
    44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS Test Conditions TO-264 AA IXFK Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50


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    O-264 44N50 48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


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    44N50Q 48N50Q 227TM 728B1 123B1 728B1 PDF

    48N50Q

    Abstract: s 404 p
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings


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    44N50Q 48N50Q 728B1 123B1 728B1 065B1 48N50Q s 404 p PDF

    48N50Q

    Abstract: IXFN48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


    Original
    44N50Q 48N50Q 227TM IXFN48N50Q 44N50Q: 48N50Q: 48N50Q 44N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


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    48N50Q 44N50Q 247TM O-264 44N50 48N50 PDF

    48N50

    Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513
    Text: IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 VDSS ID25 RDS on IXFK/FN 44N50 500 V 44 A 0.12 Ω IXFK/FN 48N50 500 V 48 A 0.10 Ω TM HiPerFET Power MOSFET N-Channel Enhancement Mode TO-264 Packages Avalanche Rated, High dv/dt, Low trr (trr ≤ 250) ns


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    44N50/50S 48N50/50S 44N50 48N50 44N50 48N50 O-264 SMD-264 TAB 429 H ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513 PDF

    48N50

    Abstract: 44N50
    Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30


    Original
    SMOS44/48N50D2, SMOS44/48N50D3 OT-227 5ID25 300us, 00A/us; 80A/us; 48N50 44N50 PDF

    IXFR44N50Q

    Abstract: IXFR48N50Q 48N50Q ixfr48n5
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original
    ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1 IXFR44N50Q IXFR48N50Q 48N50Q ixfr48n5 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 44N50


    Original
    44N50Q 48N50Q 44N50 48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A


    Original
    44N50Q 48N50Q 44N50 48N50 48N50 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original
    ISOPLUS247TM, 44N50Q 48N50Q 48N50Q -55ss PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions


    Original
    ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1 PDF

    buck-boost chopper

    Abstract: buck pfc sot 227b diode fast 48N50Q IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 IXFK48N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V 48N50QD2 48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol


    Original
    IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 227TM 44N50Q 48N50Q IXFK48N50Q buck-boost chopper buck pfc sot 227b diode fast 48N50Q IXFK48N50 PDF

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original
    mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 PDF

    ot 409

    Abstract: SMD-264 K44N50
    Text: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A


    OCR Scan
    44N50 48N50 48N50 Cto150 OT-227 E153432 ot 409 SMD-264 K44N50 PDF

    ixys ixfk 44n50

    Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
    Text: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns


    OCR Scan
    44N50/50S 48N50/50S 44N50 48N50 48N50 ixys ixfk 44n50 DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 SMD-264 PDF

    48n50u2

    Abstract: 44N50U2 IXFN44N50U2 44N50U
    Text: m xY S HiPerFET Power MOSFETs VDSS IXFN 44N50U2 /U3 IX FN 48N50U2/U3 p cont DS(on) 500 V 44 A 0.12 Q 35 ns 500 V 48 A 0.10 a 35 ns Buck & Boost Configurations for PFC & Motor Control Circuits U2 U3 I k Preliminary data Lm lu % o s Is u. « : CL X IA Symbol


    OCR Scan
    44N50U2 48N50U2/U3 44N50 48N50 48N50 OT-227 E153432 IXFN48N50U2 48n50u2 IXFN44N50U2 44N50U PDF