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    485MHZ Price and Stock

    Renesas Electronics Corporation FXTC-HE73PR-148.5-MHZ

    XTAL OSC TCXO 148.5000MHZ HCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FXTC-HE73PR-148.5-MHZ 1
    • 1 $81.33
    • 10 $81.33
    • 100 $81.33
    • 1000 $81.33
    • 10000 $81.33
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    RXD Technologies MP33-1.0485MHZ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MP33-1.0485MHZ 165 2
    • 1 -
    • 10 $2.184
    • 100 $1.5681
    • 1000 $1.4559
    • 10000 $1.4559
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    TE Connectivity FG24008

    Antennas OMNI,FG,2400-2485MHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI FG24008 Each 6 1
    • 1 $80.05
    • 10 $65.4
    • 100 $65.4
    • 1000 $65.4
    • 10000 $65.4
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    Vishay Intertechnologies IHLP1616BZERR10M0H

    Power Inductors - SMD .10uH 20% High Freq, DC/DC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IHLP1616BZERR10M0H Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.37
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    TE Connectivity MD24-12

    Antennas Dir,Mini,Fixed,NF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI MD24-12 Bulk 11
    • 1 -
    • 10 -
    • 100 $27.88
    • 1000 $27.88
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    Find more 485MHZ price and stock on Findchips.com

    485MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    485MHz

    Abstract: JXWBLB-T-BP-485-5
    Text: JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-485-5/T-4CS 1 JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Technical Specification 485 Center Frequency f0 ( MHz) 5 3dB Bandwidth(MHz)


    Original     		JXWBLB-T-BP-485-5/T-4CS 485MHz 10-2000Hz -40dB -60dB JXWBLB-T-BP-485-5 PDF

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 PDF

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 PDF

    toko a50

    Abstract: 1820-2000 WBC1-1TL DC1027A LT5568
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Up or Downconverting Applications Noise Figure: 9.3dB Typical at 900MHz Output Conversion Gain: 2.4dB Typical IIP3: 9dBm Typical at ICC = 10mA Adjustable Supply Current: 4mA to 13.4mA


    Original     		LT5560 01MHz 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm LT5537 toko a50 1820-2000 WBC1-1TL DC1027A LT5568 PDF

    TN4-26011

    Abstract: crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


    Original     		MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps TN4-26011 crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna PDF

    437MHz

    Abstract: 447MHZ MA08247 TB0205A 4514
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C


    Original     		70MHz MA08247 TB0205A 10dB/Div -30dB TB0205A 437MHz 447MHZ MA08247 4514 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


    Original     		MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps PDF

    DF765S32B

    Abstract: No abstract text available
    Text: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: DF765S32B www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. DF765S32B 2. TEST CONDITION 2-1 TYPICAL CONDITION


    Original     		DF765S32B DF765S32B PDF

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 PDF

    TDA5340

    Abstract: trimble multi Track target automotive keyless go nxp Biphase mark code trx 434 433 mhz schematic antenna PG-TSSOP-28
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		TDA5340 PG-TSSOP-28 SP000803722 PG-TSSOP-28 TDA5340 trimble multi Track target automotive keyless go nxp Biphase mark code trx 434 433 mhz schematic antenna PDF

    automotive keyless go nxp

    Abstract: AT24C32C aurix tda5340 ic 40110 be down counter
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.0, 17.02.2012 Wireless Sense & Control Edition 17.02.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		TDA5340 TDA5340 automotive keyless go nxp AT24C32C aurix ic 40110 be down counter PDF

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 PDF

    WBC1-1TL

    Abstract: marking LCBX LCBX DC1027A LT5560 HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5560 is a low power, high performance broadband active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only


    Original     		LT5560 01MHz LT5560 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm WBC1-1TL marking LCBX LCBX DC1027A HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1 PDF

    TB0205A

    Abstract: 437MHz 447MHZ 4527 footprint dimension
    Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date:


    Original     		453MHz TB0205A FR-71S03-01 10dB/Div -30dB TB0205A 437MHz 447MHZ 4527 footprint dimension PDF

    GRM1882C1H

    Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz


    Original     		AN-UHF-087-A RD01MUS2 450-527MHz RD01MUS2: RD01MUS2 GRM1882C1H GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A PDF

    TA1113A

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 475MHz Part No: MP03079 Model: TA1113A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage: 5V


    Original     		475MHz MP03079 TA1113A 485MHz) 300MHz 380MHz 445MHz 50lewood TA1113A PDF

    RD07MUS2B

    Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		TDA5340 PG-TSSOP-28 SP000803722 PG-TSSOP-28 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully-integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


    Original     		MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps PDF

    BB132

    Abstract: BB133 BB134 ILA5737D
    Text: ILA5737D Low-power high-frequency triple metric waves, microwaves mixer-oscillator for video equipment IC ILA5737D is monolithic microcircuit, low-power high-frequency triple (metric waves, microwaves) mixer-oscillator for video equipment used in TV tuners and videotape recorder


    Original     		ILA5737D ILA5737D IL5737D BB132 BB133 BB134 PDF

    7107 GP

    Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier


    Original     		AN-UHF-096-A RD07MUS2B 450-527MHz RD07MUS2B: 083YH-G" RD07MUS2B 527MHz 250mA 527MHz) 10ohm 7107 GP Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line PDF

    RD07MUS2B

    Abstract: RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C


    Original     		70MHz MA08247 TB0205A 10dB/Div -30dB TB0205A PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V PDF