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    485MHZ Search Results

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    485MHZ Price and Stock

    Renesas Electronics Corporation FXTC-HE73PR-148.5 MHZ

    XTAL OSC TCXO 148.5000MHZ HCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FXTC-HE73PR-148.5 MHZ
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    RXD Technologies MP33-1.0485MHZ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MP33-1.0485MHZ 165 2
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    • 10 $2.184
    • 100 $1.5681
    • 1000 $1.4559
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    TE Connectivity FG24008

    Antennas OMNI,FG,2400-2485MHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI FG24008 Each 6
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    • 10 $76.81
    • 100 $65.47
    • 1000 $65.47
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    Vishay Intertechnologies IHLP1616BZERR10M0H

    Power Inductors - SMD .10uH 20% High Freq, DC/DC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IHLP1616BZERR10M0H Reel 4,000
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    Abracon Corporation ASEMPLV-148.5MHZ-XYPD

    MEMS CLOCK OSCILLATOR 148.500MHZ LVDS Tube (Alt: ASEMPLV-148.5MHZ-XYPD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus ASEMPLV-148.5MHZ-XYPD 113 Weeks 110
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    485MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    485MHz

    Abstract: JXWBLB-T-BP-485-5
    Text: JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-485-5/T-4CS 1 JXWBLB-T-BP-485-5/T-4CS 485MHz Cavity Band Pass Filter Technical Specification 485 Center Frequency f0 ( MHz) 5 3dB Bandwidth(MHz)


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    PDF JXWBLB-T-BP-485-5/T-4CS 485MHz 10-2000Hz -40dB -60dB JXWBLB-T-BP-485-5

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


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    PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


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    PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120

    toko a50

    Abstract: 1820-2000 WBC1-1TL DC1027A LT5568
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Up or Downconverting Applications Noise Figure: 9.3dB Typical at 900MHz Output Conversion Gain: 2.4dB Typical IIP3: 9dBm Typical at ICC = 10mA Adjustable Supply Current: 4mA to 13.4mA


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    PDF LT5560 01MHz 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm LT5537 toko a50 1820-2000 WBC1-1TL DC1027A LT5568

    TN4-26011

    Abstract: crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


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    PDF MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps TN4-26011 crystal oscillator 850mhz N04 U1 MICRF505 MICRF506 TSX-10A differential feed loop antenna

    437MHz

    Abstract: 447MHZ MA08247 TB0205A 4514
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C


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    PDF 70MHz MA08247 TB0205A 10dB/Div -30dB TB0205A 437MHz 447MHZ MA08247 4514

    Untitled

    Abstract: No abstract text available
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


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    PDF MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps

    DF765S32B

    Abstract: No abstract text available
    Text: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: DF765S32B www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. DF765S32B 2. TEST CONDITION 2-1 TYPICAL CONDITION


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    PDF DF765S32B DF765S32B

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    TDA5340

    Abstract: trimble multi Track target automotive keyless go nxp Biphase mark code trx 434 433 mhz schematic antenna PG-TSSOP-28
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF TDA5340 PG-TSSOP-28 SP000803722 PG-TSSOP-28 TDA5340 trimble multi Track target automotive keyless go nxp Biphase mark code trx 434 433 mhz schematic antenna

    automotive keyless go nxp

    Abstract: AT24C32C aurix tda5340 ic 40110 be down counter
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.0, 17.02.2012 Wireless Sense & Control Edition 17.02.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF TDA5340 TDA5340 automotive keyless go nxp AT24C32C aurix ic 40110 be down counter

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    WBC1-1TL

    Abstract: marking LCBX LCBX DC1027A LT5560 HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5560 is a low power, high performance broadband active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only


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    PDF LT5560 01MHz LT5560 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm WBC1-1TL marking LCBX LCBX DC1027A HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1

    TB0205A

    Abstract: 437MHz 447MHZ 4527 footprint dimension
    Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date:


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    PDF 453MHz TB0205A FR-71S03-01 10dB/Div -30dB TB0205A 437MHz 447MHZ 4527 footprint dimension

    GRM1882C1H

    Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz


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    PDF AN-UHF-087-A RD01MUS2 450-527MHz RD01MUS2: RD01MUS2 GRM1882C1H GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A

    TA1113A

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 475MHz Part No: MP03079 Model: TA1113A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage: 5V


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    PDF 475MHz MP03079 TA1113A 485MHz) 300MHz 380MHz 445MHz 50lewood TA1113A

    RD07MUS2B

    Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


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    PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2

    Untitled

    Abstract: No abstract text available
    Text: S m a r t L E W I S TM T R X TDA5340 High Sensitivity Multi-Channel Transceiver Data Sheet Revision 1.2, 13.06.2012 Wireless Sense & Control Edition 13.06.2012 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original
    PDF TDA5340 PG-TSSOP-28 SP000803722 PG-TSSOP-28

    Untitled

    Abstract: No abstract text available
    Text: MICRF507 470MHz to 510MHz Low-Power FSK Transceiver with +10dBm Power Amplifier General Description The MICRF507 is a fully-integrated FSK transceiver with +10dBm power amplifier and transmit/receive switch. The device is targeted at automated meter reading AMR


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    PDF MICRF507 470MHz 510MHz 10dBm MICRF507 510MHz. 20kbps 200kbps

    BB132

    Abstract: BB133 BB134 ILA5737D
    Text: ILA5737D Low-power high-frequency triple metric waves, microwaves mixer-oscillator for video equipment IC ILA5737D is monolithic microcircuit, low-power high-frequency triple (metric waves, microwaves) mixer-oscillator for video equipment used in TV tuners and videotape recorder


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    PDF ILA5737D ILA5737D IL5737D BB132 BB133 BB134

    7107 GP

    Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier


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    PDF AN-UHF-096-A RD07MUS2B 450-527MHz RD07MUS2B: 083YH-G" RD07MUS2B 527MHz 250mA 527MHz) 10ohm 7107 GP Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line

    RD07MUS2B

    Abstract: RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


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    PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2

    Untitled

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 452.70MHz Part No: MA08247 Model: TB0205A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40°C to 85°C


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    PDF 70MHz MA08247 TB0205A 10dB/Div -30dB TB0205A

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V