B4781
Abstract: C4739 din 4766
Text: C4700 Series EURO CASSETES 1 2 0 0 - 2 5 0 0 W AT T A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • • DC input 10 - 800 V AC input 1 or 3-phase, 47 - 400 Hz or with PFC, 47 - 65 Hz DC output 5-400V
|
Original
|
PDF
|
C4700
EN61373
B4781
C4739
din 4766
|
mosfet 1200V 40A
Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
Text: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA
|
Original
|
PDF
|
IRGPS40B120UD
Super-247
20KHz
Super-247TM
5M-1994.
O-274AA
mosfet 1200V 40A
MOSFET 40A 600V
ir igbt 1200V 40A
DIODE 2800
igbt 1200V 40A short circuit
igbt 40A 600V
4772 mosfet driver
Diode 1200V 40A
IGBT 600V 40A
IGBT 600V 40A diode
|
ir igbt 1200V 40A
Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package
|
Original
|
PDF
|
IRGPS40B120U
Super-247
20KHz
Super-247TM
5M-1994.
O-274AA
ir igbt 1200V 40A
igbt 1200V 40A short circuit
on 4772
200uH
HF40D120ACE
IRGPS40B120U
1200v fet
Super-247 Package
|
Diode BFM
Abstract: TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator
Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
|
Original
|
PDF
|
10Gb/s
EML10WCA
EML10
STM-64/OC-192
100GHz
953Gb/s,
TL9000
ISO9001
FM15040
Diode BFM
TR-NWT-000870
EML10WCA
EML11
dfb activation energy
nrz optical modulator
|
5252 F
Abstract: transistor 1547 b Hytrel* 4056 Bookham Technology 5252 F led k 1535 transistor 1548 b 5252 S GB 4056 D bookham tunable LASER
Text: Data sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option This laser module employs the Bookham Technology gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed WDM 2.5 Gb/s long distance optical
|
Original
|
PDF
|
4x100GHz
14-pin
5252 F
transistor 1547 b
Hytrel* 4056
Bookham Technology
5252 F led
k 1535
transistor 1548 b
5252 S
GB 4056 D
bookham tunable LASER
|
dfb activation energy
Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
|
Original
|
PDF
|
10Gb/s
EML10WCB
EML10WCB
STM-64/OC-192
100GHz
953Gb/s,
EML10
21CFR
ISO14001
TL9000
dfb activation energy
10Gb CDR
5252 S
diode 5817 specifications
TR-NWT-000870
AN0140
EML11
GR-468
Diode BFM
|
GB 4056 D
Abstract: No abstract text available
Text: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option LC25T This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed
|
Original
|
PDF
|
4x100GHz
LC25T
14-pin
1510nm
BH13089
GB 4056 D
|
TR-NWT-000870
Abstract: 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11
Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
|
Original
|
PDF
|
10Gb/s
EML10WCA
EML10
STM-64/OC-192
100GHz
953Gb/s,
21CFR
ISO14001
TL9000
TR-NWT-000870
10Gb CDR
DFB laser drivers
k 1535
5252 S
diode 5817 specifications
direct pm modulation circuit
stm 64 laser diode 1550 nm
EML10WCA
EML11
|
Untitled
Abstract: No abstract text available
Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the
|
Original
|
PDF
|
10Gb/s
EML10WCB
EML10WCB
STM-64/OC-192
100GHz
709Gb/s,
EML10
21CFR
ISO14001
TL9000
|
5252 F 4-pin
Abstract: k 1535 5252 S bookham tunable LASER diode 5817 specifications direct pm modulation circuit LC25T bookham dr1670 wdm laser wavelength drift tunable laser diode
Text: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option LC25T This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed
|
Original
|
PDF
|
4x100GHz
LC25T
14-pin
1510nm
ISO14001
TL9000
ISO9001
FM15040
BH13089
5252 F 4-pin
k 1535
5252 S
bookham tunable LASER
diode 5817 specifications
direct pm modulation circuit
LC25T
bookham dr1670
wdm laser wavelength drift
tunable laser diode
|
cambasic
Abstract: BEST BIOS PROGRAMMING AND DATA FOR EEPROM octagon Octagon Systems 386SX manual LED 6030 nec floppy circuit 16C550 386SX IEC1000
Text: PC MICROCONTROLLERS TABLE OF CONTENTS INTRODUCTION TO THE 6000 SERIES .3–2 60X0 COMMON FEATURES .3–3 60X0 I/O COMPARISON CHART .3–3
|
Original
|
PDF
|
|
NXP 4772
Abstract: No abstract text available
Text: 6 OP 1 SS IP4770/71/72CZ16 VGA/video interface with integrated buffers, ESD protection and integrated termination resistors Rev. 2 — 19 May 2011 Product data sheet 1. General description The IP4770CZ16, IP4771CZ16, IP4772CZ16 is connected between the VGA/DVI
|
Original
|
PDF
|
IP4770/71/72CZ16
IP4770CZ16,
IP4771CZ16,
IP4772CZ16
IP4770
72CZ16
NXP 4772
|
AN9405
Abstract: HCA10008 HIP4081A MS-013-AC
Text: HCA10008 Data Sheet 80V/2.5A Peak, High Frequency Full Bridge FET Driver The HCA10008 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC package. The HCA10008 can drive every possible switch combination except those which would cause a shoot
|
Original
|
PDF
|
HCA10008
HCA10008
HCA10008s
AN9405
HIP4081A
MS-013-AC
|
NXP 4772
Abstract: IP4770 IP4770CZ16 IP4771CZ16 IP4772CZ16 SSOP16 dvi to vga circuit
Text: SS OP 16 IP4770/71/72CZ16 VGA/video interface with integrated buffers, ESD protection and integrated termination resistors Rev. 2 — 19 May 2011 Product data sheet 1. General description The IP4770CZ16, IP4771CZ16, IP4772CZ16 is connected between the VGA/DVI
|
Original
|
PDF
|
IP4770/71/72CZ16
IP4770CZ16,
IP4771CZ16,
IP4772CZ16
IP4770
72CZ16
NXP 4772
IP4770CZ16
IP4771CZ16
SSOP16
dvi to vga circuit
|
|
|
1N4770
Abstract: No abstract text available
Text: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol
|
OCR Scan
|
PDF
|
|
zener diode 9,1v 0.5 w
Abstract: 1N4772 IN4768 1n4770a 1N4771 1N4771A 9.1 zener diode 1N4770 IN4770 1N4773A
Text: lîîK ^ K 'I Mìcrosemi Corp. 1N 4765 thru 1 N 4774A 9.1 VOLT TEMPERATURE COMPENSATED ZENER REFEREN CE DIODES • ZENER VOLTAGE 9.1V . TEMPERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0 .0 0 0 5 % / °C M A X IM U M FIA T IN G S Ï-M - O perating T em perature: —65°C to + 1 7 5 °C
|
OCR Scan
|
PDF
|
1N4765
1N4774A
1N4765
1N4765A
1N4766
1N4766A
375-inches
zener diode 9,1v 0.5 w
1N4772
IN4768
1n4770a
1N4771
1N4771A
9.1 zener diode
1N4770
IN4770
1N4773A
|
Untitled
Abstract: No abstract text available
Text: 1N4765 thru 1N4774A M icm em i Corp. h Tbß 'äröde egpaftS': i / SA NTA ANA, CA SCOTTSDALE. A 1 For more information call: 602 941-6300 9-1 VOLT FEATURES . COMPENSATED ZEN EH VOLTAGE 9.1 V ± 5% ZENER REFERENCE DIODES • T EM P ER A TU R E CO EFFICIEN T RANGE: 0 .0 1 % /°C TO 0 .0 0 0 5 % / ° C
|
OCR Scan
|
PDF
|
1N4765
1N4774A
RH4774A.
G003flMfl
1N4765
|
N4770A
Abstract: N4774 zener diode 1n 4767a zener diode JEDEC 1N
Text: 1N4765 9.1 VOLT NOMINAL ZENER VOLTAGE + 5% •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N4774A LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED -1 DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O » ra tin g Tem perature: -65' C to + 175:,C
|
OCR Scan
|
PDF
|
1N4765
1N4774A
500mW
1N4765
N4770A
N4774
zener diode 1n
4767a
zener diode JEDEC 1N
|
Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios
|
OCR Scan
|
PDF
|
|
RFP70N06
Abstract: TA49007 RFG70N06 fp70n06 70n06 4772 DIODE TC1501
Text: ill H R F G 70N 06 F P 7 0 N O fi a r r is S E M I C O N D U C T O R ^ N-Channel Enhancement-Mode Power Field-Effect Transistors August 1992 Features • Packages TO-22QAB TOP VIEW 70A,60V • r DS on = 0.014£2 • UIS Rating Curve (Single Pulse) DRAIN (FLANGE)
|
OCR Scan
|
PDF
|
O-22QAB
O-247
RFG70N06
RFP70N06
11e-12
91e-3
26e-3
07e-6
12e-9
18e-8)
TA49007
fp70n06
70n06
4772 DIODE
TC1501
|
TLV2362
Abstract: TLV2362ID TLV2362IDR TLV2362IP TLV2362IPWLE TLV2362Y t994
Text: TLV2362, TLV2362Y HIGH-PERFORMANCE, LOW-VOLTAGE DUAL OPERATIONAL AMPLIFIERS SLO S126A- APRIL 1993 - REVISED AUGUST 1994 D, P, OR PW PACKAGE TOP VIEW Low Supply Voltage Operation V qq s + 1 V Min Wide Output Voltage Swing +2.4 V Typ at VCc± = ±2.5 V, RL = 10 k£2
|
OCR Scan
|
PDF
|
TLV2362,
TLV2362Y
SLOS126A-
TLV2362
100pF
TLV2362ID
TLV2362IDR
TLV2362IP
TLV2362IPWLE
t994
|
in4740
Abstract: IN4770 1N4717 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 CHARACTERISTICS DIODE 1n4732
Text: ' SO'O 01 2 0 0 .0 I Zener Voltage Tolerance No Suffix = 1 0 % Suffix A — 5 % No Suffix = 1 0 % Suffix A - 5 % C Max. Zener Impedance @ In Ohms 0 6 001 001 7 6 .0 69.0 5 8 .0 5 3 .0 4 9 .0 6 4 .0 4 5 .0 4 1 .0 3 7 .0 1 0 .0 1 4 .0 1 6 .0 4 5 .0 5 0 .0 6 0 .0
|
OCR Scan
|
PDF
|
1N47141231
1N47151231
1N4716123'
1N4717
1N4728
1N4729
1N4730
DO-41
1N4731
1N4732
in4740
IN4770
1N4730
1N4733
CHARACTERISTICS DIODE 1n4732
|
7N20E
Abstract: P7N20E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 7N 20E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS on = 0.70 OHMS
|
OCR Scan
|
PDF
|
MTP7N20E
7N20E
P7N20E
|
ion chamber
Abstract: SM110 pn2222a fairchild circuit for piezoelectric sensor fire alarm using zener ion metal detector smoke detector schematic schematic 4772 mosfet driver ion chamber smoke
Text: designed for . . • a SMI 10 micropower smoke detector circuit BENEFITS • Smoke Detector Systems High Impedance Sensor Trip Point Detector • Streamlines U L Approval of Smoke Detector System o U L C om ponent Recognized o A llo w s Systems to Meet 1 Year Life
|
OCR Scan
|
PDF
|
|
