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Cornell Dubilier Electronics Inc 476KXM050M CAP ALUM 47UF 20% 50V RADIAL TH
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DigiKey	476KXM050M	Bulk	60,000		1	1 $0.31 10 $0.179 100 $0.1126 1000 $0.07739 10000 $0.06311	Buy Now
Mouser Electronics	476KXM050M		5,905			1 $0.33 10 $0.175 100 $0.105 1000 $0.081 10000 $0.061	Buy Now
Cornell Dubilier Electronics Inc 476KXM050MSA ELECTROLYTIC/IC
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DigiKey	476KXM050MSA	Bulk			60,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	476KXM050MSA					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	476KXM050MSA	Bulk			60,000	1 - 10 - 100 - 1000 $0.076 10000 $0.076	Buy Now
IBS Electronics	476KXM050MSA				30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Cornell Dubilier Electronics Inc 476KXM050MST Aluminum Electrolytic Capacitors - Radial Leaded
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Mouser Electronics	476KXM050MST					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Illinois Capacitor Inc 476KXM050M Aluminum Electrolytic Capacitor - 47uF ±20% - 50WVDC - +105°C
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Onlinecomponents.com	476KXM050M					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Illinois Capacitor Inc 476KXM050MSA ALUMINUM ELECTROLYTIC CAPACITOR
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Richardson RFPD	476KXM050MSA				60,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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476KXM050M Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
476KXM050M		Illinois Capacitor	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 47UF 20% 50V THRU HOLE		Original	PDF

476KXM050M Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	PDF	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
mosfet j172 Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	PDF	MRF7S35120HS MRF7S35120HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	PDF	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6
NIPPON CAPACITORS Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	PDF	MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Untitled Abstract: No abstract text available Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	PDF	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6
ATC100B390JT500XT Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	PDF	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Untitled Abstract: No abstract text available Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Bypass – Coupling – Filtering – De-coupling Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Leakage Current	Original	PDF	1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x31 128KXM025M 109KXM010M
Untitled Abstract: No abstract text available Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Bypass – Coupling – Filtering – De-coupling -55°C to +105°C	Original	PDF	1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x30 128KXM025M 109KXM010M
MRF6VP11KH Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	PDF	MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101
109KXM6R3M Abstract: 228KXM6R3M Text: +105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors KXM For switching regulators and extended life applications FEATURES • High Ripple Current ■ High Frequency ■ Extended Life ■ Voltage Range: 6.3 WVDC to 100 WVDC ■ Capacitance Range: .47 µF to 15000 µF	Original	PDF	120Hz, 18x35 478KXM010MQV 16x25 18x40 159KXM010M 16x31 109KXM6R3M 228KXM6R3M
transistor j241 Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
C4532X7RIH685K Abstract: ATC600F1R0BT250XT AN1955 J373 Text: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	PDF	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6 C4532X7RIH685K ATC600F1R0BT250XT AN1955 J373
ATC100B3R3 Abstract: AN1955 MRF7S35120HSR3 Header MTTF Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	PDF	MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF

ATC100B151J Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	PDF	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays	Original	PDF	APRIL2008 CD-1242-183-10S CD-1242-183-20S CD-1242-183-30S CD-402-802-10S CD-402-802-20S CD-402-802-30S CD-102-103-10S CD-102-103-20S CD-102-103-30S SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	PDF	MRF7S35015HS MRF7S35015HSR3
Untitled Abstract: No abstract text available Text: +105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors KXM For switching regulators and extended life applications FEATURES • High Ripple Current ■ High Frequency ■ Extended Life ■ Voltage Range: 6.3 WVDC to 100 WVDC ■ Capacitance Range: .47 µF to 15000 µF	Original	PDF	120Hz, 109KXM6R3M 16x31 128KXM025M 109KXM010M 18x35 128KXM035M 109KXM016M 18x40
J161 mosfet transistor Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	PDF	MRF7S35015HS MRF7S35015HSR3 J161 mosfet transistor 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	PDF	MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
A03TK Abstract: TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	PDF	MRF6VP21KH MRF6VP21KHR6 A03TK TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227
Untitled Abstract: No abstract text available Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Bypass – Coupling – Filtering – De-coupling -55°C to +105°C	Original	PDF	1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x30 128KXM025M 109KXM010M
TUI-lf-9 Abstract: ATC700B392JT50X Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched	Original	PDF	MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X
Untitled Abstract: No abstract text available Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Bypass – Coupling – Filtering – De-coupling Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Leakage Current	Original	PDF	1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x31 128KXM025M 109KXM010M

476KXM050M Search Results

476KXM050M Price and Stock

Cornell Dubilier Electronics Inc 476KXM050M

Cornell Dubilier Electronics Inc 476KXM050MSA

Cornell Dubilier Electronics Inc 476KXM050MST

Illinois Capacitor Inc 476KXM050M

Illinois Capacitor Inc 476KXM050MSA

476KXM050M Datasheets (1)

476KXM050M Datasheets Context Search

G2225X7R225KT3AB

mosfet j172

Untitled

Untitled

NIPPON CAPACITORS

Untitled

ATC100B390JT500XT

Untitled

Untitled

MRF6VP11KH

109KXM6R3M

transistor j241

C4532X7RIH685K

ATC100B3R3

ATC100B151J

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

Untitled

Untitled

J161 mosfet transistor

A114

A03TK

Untitled

TUI-lf-9

Untitled