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    CRCW120651R0FKEA Price and Stock

    Vishay Dale CRCW120651R0FKEA

    RES SMD 51 OHM 1% 1/4W 1206
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    Vishay Dale CRCW120651R0FKEAHP

    RES SMD 51 OHM 1% 3/4W 1206
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    Vishay Dale CRCW120651R0FKEAC

    RES 51 OHM 1% 1/4W 1206
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    D25/CRCW1206 100 51R 1% ET1 e3 - Tape and Reel (Alt: CRCW120651R0FKEA)
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    Vishay Intertechnologies CRCW120651R0FKEAHP

    CRCW1206-HP 100 51R 1% ET1 E3 - Tape and Reel (Alt: CRCW120651R0FKEAHP)
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    CRCW120651R0FKEA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW120651R0FKEA Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 51 OHM 1% 1/4W 1206 Original PDF
    CRCW120651R0FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES 51 OHM 1% 1/4W 1206 Original PDF
    CRCW120651R0FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 51 OHM 1% 3/4W 1206 Original PDF

    CRCW120651R0FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4012036-FS T1G4012036-FS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		MRF7S35120HS MRF7S35120HSR3 PDF

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS b0912 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS TQGaN25 PDF

    ATC100B3R3

    Abstract: AN1955 MRF7S35120HSR3 Header MTTF
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF PDF

    ATC600S10

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10 PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500 PDF

    ATC600S3R0

    Abstract: ATC600S0R3 ATC600S0R2 37C0064
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064 PDF

    ATC600S2R7BT250XT

    Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT PDF

    CRCW060333R0FKEA

    Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
    Text: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer


    Original     		PDF

    ATC600S0R

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS ATC600S0R PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FL T1G6003028-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1


    Original     		T1G6003028-FL T1G6003028-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1


    Original     		T1G6003028-FS T1G6003028-FS PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4012036-FL T1G4012036-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FL T2G6003028-FL TQGaN25 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4012036-FS T1G4012036-FS PDF