Untitled
Abstract: No abstract text available
Text: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II
|
Original
|
FTS512K8L
--32-Pin
FTS512512K8L
Oct-05
Nov-06
Dec-06
May-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
|
Original
|
P4C1256
--28-Pin
--32-Pin
144-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
|
Original
|
F59D2G81A
250us
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II
|
Original
|
P4C1048L
32-Pin
P4C1048L
AM129
SRAM129
Oct-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin LCC 350 mil x 550 mil
|
Original
|
P4C1256
--28-Pin
--32-Pin
144-bit
32Kx8.
P4C1256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
|
Original
|
FT61256
--28-Pin
--32-Pin
144-bit
|
PDF
|
Esmt
Abstract: F59D2G81A
Text: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
|
Original
|
F59D2G81A
4bit/512Byte
Esmt
F59D2G81A
|
PDF
|
vvq1000
Abstract: AXT100-FC26-3 AXT100-FC26-1 VVQ1000-50A-C6 VVQ1000-50A-C4 electrical wiring vvq1000 51a c6 45T1 45TI VVQ1000-51A-C4
Text: 2-144 V A LV E S SERIES SY & SX Valves S TA C K I N G T Y P E M A N I F O L D – B A S E M O U N T E D T Y P E DIN R A I L M O U N T E D . P R E - W I R E D T Y P E S E R I E S SY A N D SX N u m b e r o f s t a t i o n s c a n b e i n c re a s e d o n D I N r a i l
|
Original
|
24vDC
12vDC
AXT100-FC26-1
AXT100-FC26-2
AXT100-FC26-3
vvq1000
AXT100-FC26-3
AXT100-FC26-1
VVQ1000-50A-C6
VVQ1000-50A-C4
electrical wiring
vvq1000 51a c6
45T1
45TI
VVQ1000-51A-C4
|
PDF
|
P4C1048L
Abstract: 45cw P600
Text: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II
|
Original
|
P4C1048L
--32-Pin
P4C1048L
SRAM129
SRAM129
Oct-05
45cw
P600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
|
Original
|
F59D4G81A
250us
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin SOP —28-Pin LCC 350 mil x 550 mil
|
Original
|
P4C1256
--28-Pin
--32-Pin
144-bit
32Kx8.
|
PDF
|
1519B
Abstract: P4C1256 P4C1256L
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
|
Original
|
P4C1256
--28-Pin
--32-Pin
P4C1256
loc00
1519B
P4C1256L
|
PDF
|
aeg t1580
Abstract: T1580 KA287
Text: 0029426 A E G CORP fll | D02C] 45ti 0QDba22 fi T 1580 N Typenreihe/Type range T1580N 3000 Elektrische Eigenschaften Electrical properties Höchszulässige Werte U d r m i U flR u Periodische Vorwärts und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
|
OCR Scan
|
T1580
T1580N
14/figure
16/figure
18/figure
aeg t1580
KA287
|
PDF
|
aeg t270n
Abstract: ST 084C aeg t270 T270 T270N
Text: 0 0 2 9 4 2 6 A E G 'CORP fil DE | QD2c]45ti 00DblS3 4 T 270 N Typenreihe/Type ränge T270 N 2000 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, U rrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
|
OCR Scan
|
T270N
125oC
aeg t270n
ST 084C
aeg t270
T270
T270N
|
PDF
|
|
|
HCB1075
Abstract: HCB1065
Text: SMT Power Inductor Features • Low profile, SMD type. ■ High current. ■ Magnetically shielded. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
HCB1065
HCB1068
HCB1070acteristics
HCB1065B-121
HCB1065Bâ
HCB1068Aâ
HCB1070-
HCB1075Aâ
HCB1078A-151
HCB1075
|
PDF
|
SILM830
Abstract: No abstract text available
Text: SMT Power Inductor SILM8XX Type Features • Low profile, SMD type. ■ ■ ■ ■ Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
100KHz
SILM845
SILM855
SILM830
|
PDF
|
45TI
Abstract: No abstract text available
Text: SMT Power Inductor SIQ74X Type Features • ■ ■ ■ ■ High current 10A, 1.4uH , SMD type. Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
SIQ74X
100KHzl0
SIQ74B
SI074A
SIQ74A
45TI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WS57C49C HIGH SPEED 8Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *ACC = 2 5 n s — — Up to 200 mA t CS = 1 2 n s • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V
|
OCR Scan
|
WS57C49C
P-45D
-45JI
-45TI
-45TM
-55FM
-55TM
-70TM
|
PDF
|
SK373A
Abstract: No abstract text available
Text: SMT Power Inductor SIQ73X Type Features • ■ ■ ■ ■ High current 9.0A, 0.45uH , SMD type. Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
SIQ73X
i00KHz
SI073A
SK373A
SI073C
SIQ73C
|
PDF
|
57C191C
Abstract: A921A 57c291 57c191
Text: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time “ ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 m A
|
OCR Scan
|
WS57C191
C/291
Am27S191/291
N82S191
/291C
-883C
-883C
57C191C
A921A
57c291
57c191
|
PDF
|
MATRA MHS 80c51
Abstract: MHS 80C31 MATRA MHS 80c31 80C51-12 80C31 TEMIC 80c51t 80C51-36 80C51-30 ANM031
Text: Tem ic 80C31/80C51 MATRA MHS CMOS 0 to 42 MHz Single-Chip 8 Bit Microcontroller Description MHS’s 80C31 and 80C51 are high performance SCMOS versions of the 8031/8051 NMOS single chip 8 bit |J.C. The fully static design of the MHS 80C31/80C51 allows to reduce system power consumption by bringing the
|
OCR Scan
|
80c31/80c51
80C31
80C51
80C51C
80C51T
MATRA MHS 80c51
MHS 80C31
MATRA MHS 80c31
80C51-12
80C31 TEMIC
80C51-36
80C51-30
ANM031
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMT Power Inductor SISH811 Type Features • Hight current 3.5A, 10uH , SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
SISH811
SISH811-2R2
SISH811
SISH811-4R7
SISH811-331
SISH811-471
SISH811-681
SISH811-102
105including
|
PDF
|
13005
Abstract: HMP1340 13005 A HMP1345 13005 applications
Text: SMT Power Inductor Features • Low profile, SMD type. ■ ■ ■ ■ ■ High current. Magnetically shielded. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters
|
OCR Scan
|
HMP1335~
HMP1348S
HMP1335-
HMP1340-
13005
HMP1340
13005 A
HMP1345
13005 applications
|
PDF
|
AT27C010 15DC
Abstract: AT270010L-70DM
Text: AT27C010/L Features • • • e e e e e e e Fast Read Access Time - 45 ns Low Power CMOS Operation 100 ^A max. Standby 25 mA max. A ctive at 5 MHz AT27C010L 40 mA max. A ctive at 5 MHz (AT27C01Q) W ide Selection o f JEDEC Standard Peckages 32-Lead OO&mil PEHP andC erdip
|
OCR Scan
|
AT27C010/L
AT27C010L)
AT27C01Q)
32-Lead
32-Pad
AT27C010/L
bi27C010L-20KM
AT27C010L-20LM
AT27C010L-20DM/883
AT27C010 15DC
AT270010L-70DM
|
PDF
|
