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    SEMIKRON SEMIX452GB126HDS

    Igbt Module, Dual, 1.2Kv, 455A; Dc Collector Current:455A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:-; Junction Temperature, Tj Max:125°C; Igbt Termination:Stud; Operating Temperature Max:125°C Rohs Compliant: Yes |Semikron SEMIX452GB126HDS
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    Untitled

    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 167   ()*-


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    PDF 452GB126HDs 452GB126HDs 452GAL126HDs 452GAR126HDs

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    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 156   ()*-       # '(00  2) "   30 * 4(0 " 700 " 9 (0  .  '() * '0 =   () * 4?) "   30 * (@0 " 700 " '?00 " 700 " A 20 , B ')0


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    PDF 452GB126HDs 452GAL126HDs 452GAR126HDs ESD52GB126HDs

    semix igbt GAL

    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,23 5 7       &' )       #   &' .+ (   *  8%2",89 :   Values Units *&+ /0+ 11+ 4+ 6 &+ ; /+ <<< = *'+ *&'  " "  ( /+ 


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    PDF 452GB126HDs 452GAL126HDs 452GAR126HDs gat452GB126HDs semix igbt GAL

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    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 167   ()*-       # '(00  230 "   40 * 550 " 800 " : (0  .  '() * '0 >   () * 5)0 "   40 * (20 " 800 " '@00 " 800 " A 20 , B ')0


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    PDF 452GB126HDs 452GAL126HDs 452GAR126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,23 5 7       &' )       #   &' .+ (   *  8%2",89 :   Values Units *&+ /0+ 11+ 4+ 6 &+ ; /+ <<< = *'+ *&'  " "  ( /+ 


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    PDF 452GB126HDs 15-06-20452GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 452GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 167   ()*-       # '(00  230 "   40 * 550 " 800 " : (0  .  '() * '0 >   () * 5)0 "   40 * (20 " 800 " '@00 " 800 " A 20 , B ')0


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    PDF 452GB126HDs 452GAL126HDs 452GAR126HDs

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


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    PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c