47DBM
Abstract: No abstract text available
Text: News Release ⎜ www.linear.com 50Ohm IF Gain Block Provides 47dBm OIP3, 15.5dB Gain Consumes only 450mW MILPITAS, CA – September 18, 2012 – Linear Technology announces the LTC6431-15, a 15.5dB gain block that achieves high dynamic range in a 50Ohm environment from 20MHz to
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50Ohm
47dBm
450mW
LTC6431-15,
20MHz
240MHz,
44dBm.
450mW.
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Untitled
Abstract: No abstract text available
Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2450KE
450mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: MA02203AD 3.6V 450mW RF Power Amplifier IC for DECT Applications Features DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) N/C N/C +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C •= •= •= •= •=
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MA02203AD
450mW
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UTC 225
Abstract: MMBT9015G MMBT9014
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ORDERING INFORMATION Ordering Number Lead Free
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MMBT9015
450mW)
MMBT9014
MMBT9015L-x-AE3-R
MMBT9015G-x-AE3-R
OT-23
QW-R206-023
UTC 225
MMBT9015G
MMBT9014
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015 ORDERING INFORMATION Ordering Number Package Lead Free
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450mW)
9014L-x-T92-B
9014G-x-T92-B
9014L-x-T92-K
9014G-x-T92-K
QW-R201-031
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transistor D2012
Abstract: No abstract text available
Text: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D2012UK
450mW
transistor D2012
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SS9014
Abstract: SS9015
Text: SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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SS9014
450mW)
SS9015
SS9014
SS9015
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
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MMBT9014
450mW)
MMBT9015
OT-23
100mA,
QW-R206-022
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L
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MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
OT-23
QW-R206-022
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song chuan 835
Abstract: 835L 835L-1A-C 835NL 8a 250v t85 R9552647 835-1A 835NL-1A-F-C 835L-1A-F-C song chuan
Text: SONG CHUAN 835 Features ϭ Miniature 12A 125VAC, 10A 250VAC/30VDC PCB Relay. ϭ UL/CUL, CSA, TUV, VDE approved. ϭ 450mW and 200mW coil are available. ϭ Optional for high CTI 250 plastic material E version and VDE approved type. ϭ Comply with RoHS-Directive 2002/95/EC.
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125VAC,
250VAC/30VDC
450mW
200mW
2002/95/EC.
35-1A-C
35-1A-V
35-1A-S
35-1A-F-C
35-1A-F-V
song chuan 835
835L
835L-1A-C
835NL
8a 250v t85
R9552647
835-1A
835NL-1A-F-C
835L-1A-F-C
song chuan
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NTE1530
Abstract: No abstract text available
Text: NTE1530 Integrated Circuit Audio Power Amp w/ALC, 450mW Description: The NTE1530 is a silicon monolithic integrated circuit designed for audio power amplifier applications at a 6 volt power supply. This device contains a high gain low noise preamplifier, an automatic level control ALC and a high
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NTE1530
450mW
NTE1530
14-Lead
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Untitled
Abstract: No abstract text available
Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2305
450mW
R1102B
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powernetix PNTX
Abstract: PowerNetix 980 nm pump PNTX-9000 GR-468-CORE DSAUD0057759.txt HI1060 Defense/980 nm pump
Text: PowerNetix 980 nm Pump Laser 9000 Series Datasheet Cooled, Single Mode, 14-pin Butterfly Package Description EM4’ PowerNetix Uniline (9000 Series) single mode, cooled 980 nm pump laser delivering up to 450mW of fiber-coupled power. The module is packaged using a unique, patent pending technology called
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14-pin
450mW
pntx-9000
powernetix PNTX
PowerNetix
980 nm pump
GR-468-CORE
DSAUD0057759.txt
HI1060
Defense/980 nm pump
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SS9014
Abstract: SS9015
Text: SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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SS9014
450mW)
SS9015
SS9014
SS9015
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MMBT9014
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Lead Free
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
MMBT9014
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RH-12
Abstract: No abstract text available
Text: RH SERIES INDUSTRIAL RELAYS 14.5 .571 DIMENSIONS The RH series is a small size relay with a 10A capacity. This relay also offers operating power of 250mW and a nominal power rating of 450mW. 0.2(.008) UL & CUL File #E223388 10 Amps small size relay. 1A (SPST-NO), 1C (SPDT) arrangements.
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250mW
450mW.
E223388
250mW.
120VAC
28VDC
RH-12
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ 24 X 24-Bit CMOS Multiplier ADSP-1024A FEATURES 24 x 24-Bit Parallel Multiplication 95ns Multiply Time 450mW Power Dissipation with TTL-Compatible CM OS Technology Twos-Complement Data Format Rounding Options at Three Positions Left-Shifts of 0, 1, or 2 Bits on Output
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24-Bit
ADSP-1024A
450mW
84-Pin
ADSP-1024
LS283
F273D
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Untitled
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol
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SS9014
450mW
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Untitled
Abstract: No abstract text available
Text: y MN774 MICRO NETWORKS /¿P-COM PATIBLE 8/iSec, 12-Bit A /D C O N V E R T E R DESCRIPTION • Complete, 8^sec, 12-Bit A/D Converter with Internal: Clock Reference Control Logic • HI-774A Pin and Function Compatible: Faster 9/xsec over Temp. Lower Power (450mW max)
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MN774
12-Bit
HI-774A
450mW
16-Bit
100kHz
MN376
28-Pin
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SS9014
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage
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SS9014
450mW)
SS9015
SS9014
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Untitled
Abstract: No abstract text available
Text: PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOWLEVEL&LOWNOISE • High total power dissipation PT=450mW • High hFE and good linearity • Complementary to PJ2N9015 TO-92 B ♦ A B SO L U T E M A X IM U M R A T IN G S (Ta= 25 °C) Symbol Rating
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PJ2N9014
450mW)
PJ2N9015
OT-23
1000F
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Untitled
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE • High total power dissipation. PT=450mW • High Iife and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage
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SS9014
450mW)
SS9015
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Paradigm 41024
Abstract: No abstract text available
Text: PARADIGM TECHNOLOGY INC pa r a d em 50E D PAT 1 Megabit Static RAM 128K x 8-Bit PD M 41024H Features Description □ High speed access times Com'l: 20,25,35 and 45ns M il: 20,2 5 ,3 5 ,45, and 55ns □ Low power operation - PDM41024H Active: 450mW typ. Standby: 200 mW (typ.)
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PDM41024H
450mW
MIL-STD883,
41024H
PDM41024
41Q24H-7
PDM41024
Paradigm 41024
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ADE2
Abstract: ADSP-1024 ADSP1024 1024a
Text: ANALOG DEVICES FEATURES 24 x 24-Bit Parallel Multiplication 95ns Multiply Tima 450mW Power Dissipation with TTL-Compatible CM OS Technology Twos-Complement Data Format Rounding Options at Three Positions Left-Shift« of 0,1, or 2 Bits on Output Overflow and Normalization Status Flags
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24-Bit
450mW
84-Pin
ADSP-1024
ADSP-1024A
SP-1024A
32-Bit
ADE2
ADSP1024
1024a
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