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    44SOP FLASH MEMORY Search Results

    44SOP FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy

    44SOP FLASH MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lh28f320bjd

    Abstract: AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11
    Text: June/18/2002 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		PDF June/18/2002 LH28F640BFHE-PBTLZF LRS1393 LRS1395 LRS1827 LRS1B09 LRS1B11 LRS1B121 AF9834 Y-1000 lh28f320bjd AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY 8M AND 16M DENSITIES • 8M AND 16M FLASH MEMORY WITH 120ns AND 150ns ACCESS TIMES • PLEASE CONTACT FLINT FOR DETAILS OF THE 16M PARTS 8M AND 16M FLASH MEMORY • • • • • New Product Access Voltage Icc Part Number Size Format ns V mA max


    Original     		PDF 120ns 150ns PD29F008L PD29F800L 44SOP 512Kx16 40TSOP

    lh28f800bvhe-tv85

    Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
    Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V


    Original     		PDF LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SAHT-85 LH28F008SAN-85 LH28F008SAN-12 44SOP LH28F008SCHT-L85 LH28F008SCT-L85 lh28f800bvhe-tv85 LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide

    lh28f320bjd

    Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
    Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		PDF November/1/2003 LH28F008BJ LH28F008BJT-TTLxx LH28F008BJT-BTLxx 40TSOP LHF00L02 LHF00L03 lh28f320bjd HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723

    MX29LV160D

    Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
    Text: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2


    Original     		PDF MX29LV400C/800C/160D/320D S29AL004D/008D/016D/032D MX29LV160D S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D

    ce 2752

    Abstract: ST23L3210 44-TSOPII 44TSOP X6760
    Text: ST Sitronix ST23L3210 32-Mbit 4M x 8 / 2M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L3210 is a wide range operation, 32M-bit, Read Only Memory. It is organized as 4M x 8 bits (byte mode) or Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode)


    Original     		PDF ST23L3210 32-Mbit ST23L3210 32M-bit, 150ns 48TSOP-I 12x20 2002-Sep-13 ce 2752 44-TSOPII 44TSOP X6760

    msm5232

    Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
    Text: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites


    Original     		PDF 99J595RB msm5232 d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit

    MSP55lv512

    Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
    Text: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．


    Original     		PDF AF9723/23B TEF808-50CF-01 FF804 50CARD AF9845/45B/45C FAT12FAT16 1GBit128MByte Am27C400 Am29DL16xCB TE003-48BG-07D MSP55lv512 MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A

    A3 3308

    Abstract: ST23L6410 Sitronix
    Text: ST Sitronix ST23L6410 64-Mbit 8M x 8 / 4M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L6410 is a wide range operation, 64M-bit, Read Only Memory. It is organized as 8M x 8 bits (byte mode) or Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode)


    Original     		PDF ST23L6410 64-Mbit ST23L6410 64M-bit, 150ns 2002-Sep-13 48TSOP-I A3 3308 Sitronix

    28F002-T

    Abstract: No abstract text available
    Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		PDF 28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T

    MX29LV320E

    Abstract: MX29LV320D BOTTON Macronix Macronix International AN060 MX29LV32 22A8h
    Text: APPLICATION NOTE Migrating to MX29LV320E from MX29LV320D 1. Introduction This application note describes the major differences between MX29LV320E and MX29LV320D. All the information in this document is based on the latest datasheet of the MX29LV320E and it


    Original     		PDF MX29LV320E MX29LV320D MX29LV320D. MX29LV320E 44-SOP 48-TSOP 12x20mm) MX29LV320D BOTTON Macronix Macronix International AN060 MX29LV32 22A8h

    AC23C16200B

    Abstract: flash memory 5v 16M-bit 48 TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Description The AC23C16200B high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 AC23C16200B AC23C16200B 48TSOP-I 44TSOP-II. 100/120ns 48TSOP-I flash memory 5v 16M-bit 48 TSOP

    Untitled

    Abstract: No abstract text available
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23C16202 HY23C16202 42pin 100/120ns 44TSOP-II

    Untitled

    Abstract: No abstract text available
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF HY23V16202 1MX16/2MX8 HY23V16202 42pin 100/120ns 44TSOP-II 48TSOP-I

    HY23V16202

    Abstract: HY23V16202D HY23V16202S HY23V16202T 48TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II HY23V16202D HY23V16202S HY23V16202T 48TSOP

    16202

    Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II 16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP

    Untitled

    Abstract: No abstract text available
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23C16202 HY23C16202 42pin 100/120ns 44TSOP-II

    LH28F

    Abstract: bt12 bl70
    Text: FLASH MEMORY j _ ☆ New product • FLASH MEMORIES ★ Underdevelopment ♦ Features • Smart voltage technology provides the most flexible voltage solution (from 3.3 V single to 5 V single, and to the dual voltage-3.3 V/5 V, 3.3 V/12 V, 5 V/12 V for wider application from battery operated PDAs to industrial


    OCR Scan     		PDF

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


    OCR Scan     		PDF LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85

    lh537

    Abstract: 42DIP lh533200 LH535g
    Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H


    OCR Scan     		PDF LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85


    OCR Scan     		PDF LH28F008SAT/R/N-85 LH28F008SAT/R/N-12 LH28F008SAT/R/B-KF85 LH28F008SAT/R/B-KF12 40TSOP /44SO 40TSO /42FB

    lh5s4

    Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
    Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply


    OCR Scan     		PDF LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    lh5s4axx

    Abstract: sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin
    Text: LH53F4600 4M Mask ROM SHARP LH53F4600 • Description Flash Memory Compatible pinout 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53F4600N User’s No. : LH-5S4ZXX is a CMOS 4Mbit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be


    OCR Scan     		PDF LH53F4600 LH53F4600N 16-bit lh5s4axx sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin