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    44N50 Search Results

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    44N50 Price and Stock

    onsemi FDH44N50

    MOSFET N-CH 500V 44A TO247-3
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    DigiKey FDH44N50 Tube 1,909 1
    • 1 $9.25
    • 10 $9.25
    • 100 $7.38767
    • 1000 $5.83229
    • 10000 $4.91857
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    Avnet Americas FDH44N50 Tube 30 Weeks 450
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    • 1000 $5.62056
    • 10000 $5.1586
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    Mouser Electronics FDH44N50
    • 1 $9.31
    • 10 $9.25
    • 100 $6.83
    • 1000 $6.11
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    TME FDH44N50 1
    • 1 $9.95
    • 10 $7.92
    • 100 $7.11
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    Richardson RFPD FDH44N50 450
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    Avnet Asia FDH44N50 30 Weeks 450
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    Chip1Stop FDH44N50 Tube 30
    • 1 $9.1
    • 10 $6.49
    • 100 $6.06
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    Littelfuse Inc IXFR44N50P

    MOSFET N-CH 500V 24A ISOPLUS247
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    DigiKey IXFR44N50P Tube 289 1
    • 1 $10.3
    • 10 $10.3
    • 100 $8.63567
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    Littelfuse Inc IXFH44N50Q3

    MOSFET N-CH 500V 44A TO247AD
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    DigiKey IXFH44N50Q3 Tube 204 1
    • 1 $14.39
    • 10 $14.39
    • 100 $12.06
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    Littelfuse Inc IXFH44N50P

    MOSFET N-CH 500V 44A TO247AD
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    DigiKey IXFH44N50P Tube 16 1
    • 1 $11.4
    • 10 $11.4
    • 100 $9.229
    • 1000 $7.87169
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    IXYS Corporation IXFN44N50

    MOSFET N-CH 500V 44A SOT-227B
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    DigiKey IXFN44N50 Tube 10
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    • 10 $20.613
    • 100 $20.613
    • 1000 $20.613
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    Mouser Electronics IXFN44N50
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    Find more 44N50 price and stock on Findchips.com

    44N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    123B16

    Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM


    Original     		PDF 44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q

    44N50

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 44N50P 405B2 44N50

    44N50P

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247

    48N50

    Abstract: 48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS on 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 44N50Q 48N50Q 44N50 48N50 OT-227 E153432 48N50 48N50Q 44N50

    48N50Q

    Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q

    44N50

    Abstract: 48N50 48N50Q ixys ixfk 44n50
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


    Original     		PDF 48N50Q 44N50Q 247TM 44N50 48N50 ixys ixfk 44n50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:

    44n50

    Abstract: 44N50P IXFH44N50P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2 IXFH44N50P 44n50 44N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P O-247 O-264 IXFH44N50P 03-21-06-B

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM


    Original     		PDF 44N50P 03-21-06-B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50


    Original     		PDF 44N50 48N50 48N50 O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50


    Original     		PDF 44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS Test Conditions TO-264 AA IXFK Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50


    Original     		PDF O-264 44N50 48N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


    Original     		PDF 44N50Q 48N50Q 227TM 728B1 123B1 728B1

    IXFH44N50P

    Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		PDF 44N50P O-247 IXFH44N50P 03-21-06-B 44n50p ixfh 44n50p C4455 IXFK44N50P

    48N50Q

    Abstract: IXFN48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


    Original     		PDF 44N50Q 48N50Q 227TM IXFN48N50Q 44N50Q: 48N50Q: 48N50Q 44N50

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


    Original     		PDF 48N50Q 44N50Q 247TM O-264 44N50 48N50

    48N50

    Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513
    Text: IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 VDSS ID25 RDS on IXFK/FN 44N50 500 V 44 A 0.12 Ω IXFK/FN 48N50 500 V 48 A 0.10 Ω TM HiPerFET Power MOSFET N-Channel Enhancement Mode TO-264 Packages Avalanche Rated, High dv/dt, Low trr (trr ≤ 250) ns


    Original     		PDF 44N50/50S 48N50/50S 44N50 48N50 44N50 48N50 O-264 SMD-264 TAB 429 H ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerRFTM Power MOSFETs ISOPLUS247TM F-Class: MegaHertz Switching IXFR 44N50F VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 44N50F 247TM E153432

    44N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2 44N50P

    ot 409

    Abstract: SMD-264 K44N50
    Text: nixYS ix f k / ix f n 44N50 IXFK/IXFN 48N50 trr Symbol Test Conditions v DSS Tj = 25°Cto150°C 500 500 V VDGR T,J = 2 5°C to 150°C; RG „S= 1 Mi2 500 500 V VGS vGSM Continuous d20 ±20 V Transient ±30 ±30 V ^D25 Tc =25°C 44N50 48N50 44 48 44 48 A A


    OCR Scan     		PDF 44N50 48N50 48N50 Cto150 OT-227 E153432 ot 409 SMD-264 K44N50

    ixys ixfk 44n50

    Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
    Text: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns


    OCR Scan     		PDF 44N50/50S 48N50/50S 44N50 48N50 48N50 ixys ixfk 44n50 DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 SMD-264