Untitled
Abstract: No abstract text available
Text: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC640
4U55452
DD14SST
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Untitled
Abstract: No abstract text available
Text: I . . I P D -2 .3 5 3 B International I R Rectifier p r e l im in a r y SCHOTTKY RECTIFIER 30 Amp Desciption/Features Major Ratings and Characteristics Characteristics If a v Rectangular waveform V rrm Ifs m @ tp = 8.3ms sine \£ @ 30Apk, T j = 125°C
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30Apk,
22GQ100
4A554S2
22GQ100
O-254AA
MIL-PRF-19500
California90245,
RH89BB,
Liguria49
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2130D
IR2130D
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1SS90
Abstract: No abstract text available
Text: Bulletin 127135 rev.C 09/97 International iORRectifier irk u /V 71 ,91 s e rie s THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features 75 A 95 A • Electrically Isolated: DBC b a s e p la te ■ 3 5 0 0 V RMS is o la tin g v o lta g e ■ S ta n d a rd JE D E C p a c k a g e
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irku/v71
3500VRMSisolating
E78996
40ohms
S54S5
1SS90
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IRFY340
Abstract: irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120
Text: IOR I RFY Series Devices IRFY Series Data Sheet The IRFY Data Sheet de scrib es 12 devices, 8 N -C hannel and 4 P -C hannel, all con tain ed in the T O -257A B package. T his data sheet is arra ng ed to show com m on ta b u la r and gra ph ical inform ation
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O-257AB
IRFY9140
IRFY9240
IRFY044
IRFY120
IRFY130
IRFY140
IRFY240
IRFY340
IRFY430
IRFY340
irfv120
IRFY044
IRFY120
IRFY130
IRFY140
IRFY240
IRFY430
IRFY440
IRFY9120
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Untitled
Abstract: No abstract text available
Text: PD - 9.1370B International IGR Rectifier IRL3705N PRELIMINARY HEXFET Power M OSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSS = 55V
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1370B
IRL3705N
43SS4S2
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IR2130 3 phase
Abstract: No abstract text available
Text: International IÖR Rectifier Data Sheet No. PD-6.019F IR2130 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2130
0-20V
IR2130
IRF830)
IRF820)
IRF840)
IR2130 3 phase
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