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    IR2130D Search Results

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    IR2130D Price and Stock

    Infineon Technologies AG IR2130DSCS

    MOSFET and IGBT Gate Driver 3-OUT High and Low Side Non-Inverting 28-Pin MO-038AB - Bulk (Alt: IR2130DSCS)
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    Avnet Americas IR2130DSCS Bulk 50
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    Infineon Technologies AG IR2130D

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    Future Electronics IR2130D 100
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    Flip Electronics IR2130D 420
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    IR2130D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IR2130D International Rectifier 3-PHASE BRIDGE Original PDF
    IR2130D International Rectifier 3-Phase Driver Original PDF
    IR2130D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IR2130D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-60022C IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels


    Original
    PD-60022C IR2130D IR2130D MO038AB PDF

    AN ir2130

    Abstract: No abstract text available
    Text: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels


    Original
    PD-60022D IR2130D 100mA 675ns 425ns IR2130D MO-038AB AN ir2130 PDF

    ir2130 application

    Abstract: Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement IR2130D 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130
    Text: Data Sheet No. PD-6.022A IR2130D 3-PHASE BRIDGE Features nHermetic nFloatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels


    Original
    IR2130D IR2130D MO-038AB ir2130 application Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130 PDF

    IR2130D

    Abstract: 81 221
    Text: IR2130D Case Outline and dimensions 28 Pin Dip Package Conforms to JEDEC Outline MO-038AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020


    Original
    IR2130D MO-038AB IR2130D 81 221 PDF

    mosfet IRF450

    Abstract: CA50 IR2130 IR2130D IRF450 IRF820 IRF830 IRF840 MO-038
    Text: PD-60022B IR2130D 3-PHASE DRIVER Features n Hermetic n Floatingchanneldesignedforbootstrap n n n n n n operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels


    Original
    PD-60022B IR2130D IR2130D ground52-7105 mosfet IRF450 CA50 IR2130 IRF450 IRF820 IRF830 IRF840 MO-038 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Product Summary Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels


    Original
    PD-60022D IR2130D IR2130D MO-038AB PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original
    4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS PDF

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original
    DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF PDF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original
    94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original
    IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L PDF

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


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    IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX PDF

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original
    4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan
    IR2130D IR2130D PDF

    f 630

    Abstract: f630ns IR2130D f630
    Text: Other Products from IR Government and Space PICs IR2130D High Voltage Three Phase MOS Gate Driver FEATURES FUNC TIONAL BLOCK DIAGRAM • High voltage 600V operation Output driver designed to drive MOS-gated power devices — Output drive of 250mA/500mA typical source/


    OCR Scan
    IR2130D 250mA/500mA 75/35ns 10OOpF /-50V/ns 485mV 10OmV 250ns ns/400ns f 630 f630ns IR2130D f630 PDF

    IRGAC50

    Abstract: MO036AA IRGAC50U IRGAC50F
    Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)


    OCR Scan
    IR2110E IR2110E6 IR2110L IR2110L6 IR2125Z 10to20 250mA IRGAC50 MO036AA IRGAC50U IRGAC50F PDF

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


    OCR Scan
    t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12 PDF

    f630ns

    Abstract: f630 f 630
    Text: International Government and Space PICs liöRlRectifier IR 2 13 0 D High Voltage Three Phase MOS Gate Driver F U N C T IO N A L B LO C K D IA G R A M FEATU R ES • High voltage 600V operation Output driver designed to drive MOS-gated power devices — Output drive of 250mA/500mA typical source/


    OCR Scan
    250mA/500mA 75/35ns 10OOpF /-50V/ns 485mV 100mV 250ns ns/400ns IR2130D 250mA/ f630ns f630 f 630 PDF