WFF13N50
Abstract: LT 939
Text: WFF13N50 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 0.48 Ω )@VGS=10V • Gate Charge (Typical 43nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ { Symbol ■ 2. Drain
|
Original
|
PDF
|
WFF13N50
O-220F
O-220F(
WFF13N50
LT 939
|
SMK1265
Abstract: SMK1265F 12A 650V MOSFET 43nC
Text: SMK1265F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=43nC(Typ.) Low RDS(on) : RDS(on)=0.8Ω(Max.) D G Ordering Information
|
Original
|
PDF
|
SMK1265F
SMK1265
O-220F-3L
SDB20D45
KSD-T0O039-002
SMK1265
SMK1265F
12A 650V MOSFET
43nC
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
14N50
14N50
O-263
QW-R502-720
|
13N50c
Abstract: No abstract text available
Text: QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQB13N50C/FQI13N50C
13N50C
FQB13N50CTM
O-263
FQB13N50C
FQB13N50CTM
com/pf/FQ/FQB13N50C
07-Dec-2009
13N50c
|
Untitled
Abstract: No abstract text available
Text: DS1876 SFP Controller with Dual LDD Interface General Description The DS1876 controls and monitors all functions for dual transmitter modules. The memory map is based on SFF-8472. The DS1876 supports APC and modulation control and eye safety functionality for two laser
|
Original
|
PDF
|
DS1876
DS1876
SFF-8472.
SFF-8472
|
ltxp
Abstract: No abstract text available
Text: 19-5153; Rev 0; 2/10 SFP Controller with Dual LDD Interface The DS1876 controls and monitors all functions for dual transmitter modules. The memory map is based on SFF-8472. The DS1876 supports APC and modulation control and eye safety functionality for two laser
|
Original
|
PDF
|
DS1876
SFF-8472.
SFF-8472
ltxp
|
pin diagram for IC 1619
Abstract: LTHC LT1619 LT1698 MBRD835 dc dc 5 v sepic converter MARKING 16B DIODE msop ltc1624 cross reference 100 20L A1 diode ER11/5
Text: LT1619 Low Voltage Current Mode PWM Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1619 is a fixed frequency PWM controller for implementing current mode DC/DC converters with minimum external parts. The LT1619 operates with input
|
Original
|
PDF
|
LT1619
LT1619
300kHz
LTC1871
50kHz
MSOP-10
LTC1872
OT-23
550kHz
LT1946
pin diagram for IC 1619
LTHC
LT1698
MBRD835
dc dc 5 v sepic converter
MARKING 16B DIODE msop
ltc1624 cross reference
100 20L A1 diode
ER11/5
|
Untitled
Abstract: No abstract text available
Text: 19-5188; Rev 1; 4/10 SFP Controller for Dual Rx Interface The DS1877 controls and monitors all functions for SFF, SFP, and SFP+ modules including all SFF-8472 functionality. The device supports all LOS functions for two receivers, and continually monitors for LOS of either
|
Original
|
PDF
|
DS1877
SFF-8472
DS1877T+
-40NC
DS1877
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
|
Original
|
PDF
|
UF640
UF640
UF640L
UF640G
QW-R502-066
|
IRF6678
Abstract: IRF6678TR1
Text: PD - 96979F IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Dual Sided Cooling Compatible
|
Original
|
PDF
|
96979F
IRF6678
IRF6678
IRF6678TR1
|
UF640L-TA3-T
Abstract: PN channel MOSFET 10A UF640 UF640-TA3-T UF640-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
|
Original
|
PDF
|
UF640
UF640
O-220
O-220F
UF640L
UF640L-TA3-T
PN channel MOSFET 10A
UF640-TA3-T
UF640-TF3-T
|
Untitled
Abstract: No abstract text available
Text: PD - 96979F IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V l Dual Sided Cooling Compatible
|
Original
|
PDF
|
96979F
IRF6678
|
IRF6678
Abstract: IRF6678TR1
Text: PD - 96979F IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Dual Sided Cooling Compatible
|
Original
|
PDF
|
96979F
IRF6678
IRF6678
IRF6678TR1
|
MOSFET 500V 15A
Abstract: FQA13N50CF F109
Text: FRFET FQA13N50CF 500V N-Channel MOSFET Features Description • • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQA13N50CF
MOSFET 500V 15A
FQA13N50CF
F109
|
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
|
Original
|
PDF
|
UF640
O-252
O-263
UF640
O-220
O-220F
O-220F2
QW-R502-066
|
13n50g
Abstract: 13N50
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
13N50
O-220
13N50
O-220F
QW-R502-362
13n50g
|
Untitled
Abstract: No abstract text available
Text: FRFET FQA13N50CF 500V N-Channel MOSFET Features Description • • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQA13N50CF
FQA13N50CF
|
T1435N
Abstract: No abstract text available
Text: DS3911 Temperature-Controlled, Nonvolatile, I2C Quad DAC General Description Features The DS3911 is a quad, 10-bit delta-sigma output, nonvolatile NV controller that features an on-chip temperature sensor and associated analog-to-digital converter (ADC).
|
Original
|
PDF
|
DS3911
10-bit
-40NC
100NC
400kHz.
T1435N
|
Untitled
Abstract: No abstract text available
Text: DS1876 SFP Controller with Dual LDD Interface General Description The DS1876 controls and monitors all functions for dual transmitter modules. The memory map is based on SFF-8472. The DS1876 supports APC and modulation control and eye safety functionality for two laser
|
Original
|
PDF
|
DS1876
SFF-8472.
SFF-8472
|
FDS6676S
Abstract: FDS6676
Text: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDS6676S
FDS6676S
FDS6676
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
|
Original
|
PDF
|
UF640V
18OHM,
UF640V
QW-R502-916,
|
IRF6678
Abstract: IRF6678TR1
Text: PD - 96979B IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2
|
Original
|
PDF
|
96979B
IRF6678
IRF6678
IRF6678TR1
|
F63TNR
Abstract: F852 FDS6576 FDS9953A L86Z CBVK741B019 F011
Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
PDF
|
FDS6576
F63TNR
F852
FDS6576
FDS9953A
L86Z
CBVK741B019
F011
|
Untitled
Abstract: No abstract text available
Text: LM K04000,LM K04001, LM K04002,LM K04010, LMK04011,LMK04031 ,LMK04033 LM K04000 Family Low-Noise C lock Jitter C leaner with Cascaded PLLs J b T exa s ÌN STR U M ENTS Literature Number: SNOSAZ8J t LMK04000 Family Sem iconductor Low-Noise Clock Jitter Cleaner with Cascaded PLLs
|
OCR Scan
|
PDF
|
K04000
K04001,
K04002
K04010,
LMK04011
LMK04031
LMK04033
LMK04000
|
