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    4312 020 31 Search Results

    4312 020 31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC4312F Rochester Electronics LLC MC4312F - 4-Bit Shift Register Visit Rochester Electronics LLC Buy
    4312RV-245XGLD Coilcraft Inc General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT Visit Coilcraft Inc
    4312RV-245XGLB Coilcraft Inc General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT Visit Coilcraft Inc
    4312RV-404XGLB Coilcraft Inc General Purpose Inductor, 400uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT Visit Coilcraft Inc
    4312RV-725X Coilcraft Inc RFID transponder coil, SMT, RoHS Visit Coilcraft Inc
    SF Impression Pixel

    4312 020 31 Price and Stock

    Wurth Elektronik 613020243121

    Headers & Wire Housings WR-PHD 2.54mm Socket Header
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 613020243121 463
    • 1 $1.6
    • 10 $1.47
    • 100 $1.2
    • 1000 $1.03
    • 10000 $0.918
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    Mill-Max Mfg Corp 324-43-120-41-002000

    IC & Component Sockets 20P SINGLE IN LINE SKT 4 LEVEL WRAPOST
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    Mouser Electronics 324-43-120-41-002000 93
    • 1 $15.8
    • 10 $13.88
    • 100 $13.88
    • 1000 $11.14
    • 10000 $11.14
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    HARTING Technology Group 21340304312020

    Sensor Cables / Actuator Cables M5 A-cod 3-pol st/st m/f PUR 2.0M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 21340304312020 10
    • 1 $70.87
    • 10 $55.11
    • 100 $51.52
    • 1000 $51.52
    • 10000 $51.52
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    TDK Corporation B84312C0020H103

    Power Line Filters EMP-Kommunik.-filter 20x0.1A 100V
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    Mouser Electronics B84312C0020H103
    • 1 $3896.19
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    • 100 $3896.19
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    • 10000 $3896.19
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    TDK Corporation B84312F0020B003

    Power Line Filters 2x01A 100V 2-LINE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics B84312F0020B003
    • 1 $527.23
    • 10 $527.23
    • 100 $527.23
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    Find more 4312 020 31 price and stock on Findchips.com

    4312 020 31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4c6 toroids

    Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
    Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96


    Original     		PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE APX bb53^31 DOEIMB D ll BLV75/12 T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF BLV75/12 OT-119)

    transistor itt 975

    Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz


    OCR Scan     		PDF BLX15 transistor itt 975 BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640

    MS-18273-2

    Abstract: M24308/4-312
    Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST DF DO R E VIS IO N S LTR DESCRIPTION REV PER ECO—1 0 —0 0 1 1 7 0 T H E C O N N E C T O R D E S C R I B E D IN T H I S DOC U ME N T W I U L MAT E WI TH


    OCR Scan     		PDF 31MAR2000 MS-18273-2 M24308/4-312

    PR37 RESISTOR

    Abstract: PR37 resistors
    Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents


    OCR Scan     		PDF BLW96 PR37 RESISTOR PR37 resistors

    philips blx15

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:


    OCR Scan     		PDF BLX15 7Z67664 philips blx15

    Untitled

    Abstract: No abstract text available
    Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features


    OCR Scan     		PDF D03TD32 BLV38

    transistor c 1974

    Abstract: No abstract text available
    Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.


    OCR Scan     		PDF 001370a BLW60 0D13720 transistor c 1974

    4312 020 36640

    Abstract: ferroxcube wideband hf choke
    Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF bbS3T31 BLX39 juF/10 /zF/35 4312 020 36640 ferroxcube wideband hf choke

    Philips 2222 capacitor

    Abstract: philips capacitor philips capacitor 2222
    Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222

    ferroxcube 4322 020 97171

    Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
    Text: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion


    OCR Scan     		PDF BLF175 OT123 bb53131 BLF175 MCA25S ferroxcube 4322 020 97171 philips ferroxcube 4c6 D1 Marking SOT123 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322

    BLF177

    Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
    Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244

    2N3866

    Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
    Text: • bb53^31 N AflER 0Q2T7Ö1 b02 * A P X PHILIPS/DISCRETE bTE 2N3866 2N4427 P SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N o verlay transistors in T O -3 9 m etal envelopes w ith the c o lle c to r connected to the case. T he devices are p rim a rily intended fo r class-A, B o r C am plifiers, frequency m u ltip lie r and o sc illa to r circuits.


    OCR Scan     		PDF bb53131 0Q217Ã 2N3866 2N4427 bb53T31 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides


    OCR Scan     		PDF BLW50F E13S1

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested


    OCR Scan     		PDF BLX13 147nH 118nH bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 002A730 BFS23A 175MHz 00Bfl73t>

    Untitled

    Abstract: No abstract text available
    Text: i i N AHER P H I L IPS/DISCRETE b^E D bbS3T31 A 003^023 7TA BLV37 IAPX VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in VH F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain


    OCR Scan     		PDF bbS3T31 BLV37

    4312 020 36640

    Abstract: transistor R1Z BLW97 lt5331 ferroxcube wideband hf choke
    Text: N AMER PH I L I P S / D I S C R E T E b^E T> • bbSS^! 0aE^S27 ÔTM * A P X BLW97 JL H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and m ilita ry transm itting equipment in the h.f. band.


    OCR Scan     		PDF BLW97 OT-121 4312 020 36640 transistor R1Z BLW97 lt5331 ferroxcube wideband hf choke

    2N3927

    Abstract: No abstract text available
    Text: bTE D • 2N3924 2N3926 2N3927 bb53*131 003*1766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter


    OCR Scan     		PDF 2N3924 2N3926 2N3927 bb53T31 7Z08I91 7Z08189 7Z08185 2N3927

    58W SOT

    Abstract: BLW85 ZL18
    Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bbS3T31 BLW85 7Z77540 7Z77541 58W SOT BLW85 ZL18

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


    OCR Scan     		PDF bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbSB'lBl 0 0 2 ^ 6 M b M T l * A P X Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.


    OCR Scan     		PDF BLF145 bb53T31 002T85M

    itt 2222

    Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
    Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF 003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors