42N170 Search Results

42N170 Price and Stock

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IXYS Corporation IXBH42N170 IGBT 1700V 80A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH42N170	Tube	972		1	1 $22.76 10 $22.76 100 $18.872 1000 $15.09757 10000 $15.09757	Buy Now
Mouser Electronics	IXBH42N170		1,184			1 $22.51 10 $21.18 100 $18.32 1000 $15.1 10000 $15.1	Buy Now
Newark	IXBH42N170	Bulk			1	1 $29.6 10 $27.3 100 $23.31 1000 $23.31 10000 $23.31	Buy Now
TTI	IXBH42N170	Tube	300		30	1 - 10 - 100 $15.99 1000 $15.99 10000 $15.99	Buy Now
TME	IXBH42N170		2		1	1 $29.62 10 $23.52 100 $21.85 1000 $21.85 10000 $21.85	Buy Now

New Advantage Corporation	IXBH42N170		60		1	1 - 10 - 100 $20.73 1000 $20.73 10000 $20.73	Buy Now
IXYS Corporation IXBH42N170A IGBT 1700V 42A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH42N170A	Tube	146		1	1 $25.29 10 $25.29 100 $20.96933 1000 $16.77551 10000 $16.77551	Buy Now
Mouser Electronics	IXBH42N170A		250			1 $25.29 10 $23.73 100 $20.6 1000 $19.03 10000 $19.03	Buy Now
TTI	IXBH42N170A	Tube			300	1 - 10 - 100 - 1000 $19.03 10000 $19.03	Buy Now
TME	IXBH42N170A		60		1	1 $26.84 10 $22.52 100 $21.74 1000 $21.74 10000 $21.74	Buy Now
New Advantage Corporation	IXBH42N170A		48		1	1 - 10 $44.42 100 $41.46 1000 $41.46 10000 $41.46	Buy Now
IXYS Corporation IXBT42N170 IGBT 1700V 80A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBT42N170	Tube			1	1 $27.78 10 $20.27 100 $17.0089 1000 $17.0089 10000 $17.0089	Buy Now
Mouser Electronics	IXBT42N170					1 $27.43 10 $20.27 100 $17 1000 $17 10000 $17	Get Quote
TTI	IXBT42N170	Tube			300	1 - 10 - 100 - 1000 $18.63 10000 $18.63	Buy Now
TME	IXBT42N170				1	1 $31.17 10 $24.74 100 $23.07 1000 $23.07 10000 $23.07	Get Quote
IXYS Corporation IXBR42N170 IGBT 1700V 57A 200W ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBR42N170	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXBR42N170					1 - 10 - 100 $26.29 1000 $23.75 10000 $23.75	Get Quote
IXYS Corporation IXBN42N170A IGBT MOD 1700V 42A 312W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBN42N170A	Tube			300	1 - 10 - 100 - 1000 $28.59177 10000 $28.59177	Buy Now
Mouser Electronics	IXBN42N170A					1 - 10 - 100 - 1000 $30.71 10000 $30.71	Get Quote
Bristol Electronics	IXBN42N170A		178			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXBN42N170A	Tube			300	1 - 10 - 100 - 1000 $31.81 10000 $31.81	Buy Now
TME	IXBN42N170A		4		1	1 $41.71 10 $34.94 100 $34.94 1000 $34.94 10000 $34.94	Buy Now

New Advantage Corporation	IXBN42N170A		16		1	1 - 10 $68.63 100 $64.06 1000 $64.06 10000 $64.06	Buy Now

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42N170 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C9014 Abstract: 42N170 84ae Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE sat = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V	Original	PDF	42N170 C9014 42N170 84ae
42N170 Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	42N170 42N170 O-268 O-247
Untitled Abstract: No abstract text available Text: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	42N170A O-268 O-247) 728B1
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	42N170 O-247
Untitled Abstract: No abstract text available Text: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	PDF	42N170A 42N170A O-268 O-247 O-268 O-247) 728B1
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	42N170 42N170 O-268 O-247 O-247)
Untitled Abstract: No abstract text available Text: Advance Technical Information IXBN 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	42N170A 728B1
Untitled Abstract: No abstract text available Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	PDF	42N170A O-268 O-247) 728B1
Untitled Abstract: No abstract text available Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	42N170A 728B1
98933 Abstract: E153432 IXBN42N170A Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	42N170A 150ing 728B1 98933 E153432 IXBN42N170A
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	PDF	16N170A 16N170 42N170 40N160 9N160 15N140
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

42N170 Search Results

42N170 Price and Stock

IXYS Corporation IXBH42N170

IXYS Corporation IXBH42N170A

IXYS Corporation IXBT42N170

IXYS Corporation IXBR42N170

IXYS Corporation IXBN42N170A

42N170 Datasheets Context Search

C9014

42N170

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98933

7N60B equivalent

40N160

50N60