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    Phoenix Contact 1424100 (ALTERNATE: SAC-4P- 1,5-PUR/M12FRS PESH)

    Cable Assembly, Single Ended, M8 Female, 4 Conductor, 1.5m, M12 Power Series | Phoenix Contact 1424100
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    RS 1424100 (ALTERNATE: SAC-4P- 1,5-PUR/M12FRS PESH) Bulk 1
    • 1 $48.74
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    • 100 $48.74
    • 1000 $48.74
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    424100A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SIMM 30-pin

    Abstract: No abstract text available
    Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­


    OCR Scan     		MC-424100A8 304-word uPD424100 30-Pin MC-424100A8 SIMM 30-pin PDF

    nec 424100

    Abstract: 424100 nec v70 LA80 pd424100
    Text: N E C Electronics Inc. JIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CMOS RAM Description Features .Erf W The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		uPD424100 uPD424100A/L uPD42S4100A/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-AXX 42S4100L-Axx pPD424100, nec 424100 424100 nec v70 LA80 pd424100 PDF

    nec 424100

    Abstract: No abstract text available
    Text: M ié W W NEC Electronics Inc. JLIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CM O S RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		JLIPD424100, 24100A/L, 42S4100A/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-AXX 42S4100L-Axx 1PD424100, nec 424100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ­


    OCR Scan     		MC-424100A9 MC-424100A9 304-word 30-Pin PD424100 83IH-6815B PDF

    30-pin simm memory dynamic

    Abstract: No abstract text available
    Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­


    OCR Scan     		MC-424100A8 304-word pPD424100 16-ms MC-424100A8 83IH-6815B 30-pin simm memory dynamic PDF

    adret

    Abstract: 42S41 424100 CSR BLE m07b
    Text: £ Q E L E C T R O N I C S I N C b l E D • b 4 B V S 2 S 0 0 3 3 S 7 b DSG H N E C E NEC Electronics Inc. /JPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit D yn am ic C M O S R A M Description Features T \ l Md W T he devices listed below are fast-page dynam ic RAMs


    OCR Scan     		uPD424100 uPD424100A/L uPD42S4100A/L 42S4100A/L b427SE5 fiPD424100, 4241OOA/L, adret 42S41 424100 CSR BLE m07b PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC Electronics Inc. MC-424000A9, -424100A 9 4,194,304 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C -424000A 9 and the MC-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o p e ra te from a single + 5 -v o lt power supply.


    OCR Scan     		MC-424000A9, -424100A -424000A MC-424100A9 304-word 30-Pin /JPD424100 -424100A9 PDF

    424100A

    Abstract: No abstract text available
    Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ­


    OCR Scan     		MC-424100A9 304-word fiPD424100 16-ms MC-424100A9 424100A PDF

    MC-424000A9BA

    Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
    Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor


    OCR Scan     		MC-424000A9, -424100A9 MC-424000A9 C-424100A9 304-word PD424100 dur005 30-Pin MC-424000A9BA) C-424000A9BA MC-424000A9BA C-424000A9BA simm 30-pin 9-bit PDF

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K PDF

    MN12261

    Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
    Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating


    OCR Scan     		N1224 16-DIP 18-DIP SO-18D 14-DlP MN12261 MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram PDF

    A/M29F010B(45/70/90/MT352/CG/sigma asc 333

    Abstract: No abstract text available
    Text: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		HIPD424100, 4241OOA/L, 42S41OOA/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-Axx 42S4100L-Axx A/M29F010B(45/70/90/MT352/CG/sigma asc 333 PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    N42C

    Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
    Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A


    OCR Scan     		N41256A 1256A N41257A-08 256/4ms 6-P-0300A QFJ018-P-R290 ZIP016-P-0300 DIP016-P-0300A N42C N41C MN41256a N4146 4141-00 41410 TSOP044-P0400A N4141 PDF