K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WBG08U1M
K9KAG08U0M
K9NCG08U5M
K9XXG08XXM
100ns)
K9WBG08U1M-PCB0
K9NCG08U5M-PCB0
K9NCG08U5M
Samsung K9NCG08U5M
K9F8G08U0M
K9KAG08U0M-PCB0
k9wbg08
K9KAG08U0M-P
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Untitled
Abstract: No abstract text available
Text: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
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TH58BVG3S0HBAI6
TH58BVG3S0HBAI6
4096blocks.
4224-byte
4224-bytes
2013-09-20C
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Untitled
Abstract: No abstract text available
Text: TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
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TH58BYG3S0HBAI4
TH58BYG3S0HBAI4
4096blocks.
4224-byte
4224-bytes
2013-09-20C
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nand64
Abstract: No abstract text available
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3FGA
64-Gbit
4224-byte
nand64
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NAND64GW3FGA
Abstract: NAND64G 64Gbit NUMonyx NAND64G
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3FGA
64-Gbit
4224-byte
NAND64GW3FGA
NAND64G
64Gbit
NUMonyx NAND64G
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C7478
Abstract: No abstract text available
Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2B
4224-byte
C7478
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NAND16GW3F4A
Abstract: 16G nand
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
16G nand
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Untitled
Abstract: No abstract text available
Text: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
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TC58BYG2S0HBAI6
TC58BYG2S0HBAI6
2048blocks.
4224-byte
4224-bytes
2013-07-05C
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PDF
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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hy27uf082g2b
Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
Text: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
256Mx8bit)
hy27uf082g2b
hy27uf082G
hy27uf082
hy27uf082G2
HY27UF082G2B-F
hynix nand
hynix nand PROGRAMMING
hynix nand flash 2gb
52-ULGA
hynix nand edc spare area code
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Untitled
Abstract: No abstract text available
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3FGA
64-Gbit
4224-byte
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K9HCG08U1M-PCB0
Abstract: K9LBG08U0M K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m
Text: K9MDG08U5M K9LBG08U0M K9HCG08U1M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9MDG08U5M
K9LBG08U0M
K9HCG08U1M
K9XXG08UXM
4224Byte
100ns)
K9HCG08U1M-PCB0
K9lbG08U0M-PCB0
K9MDG08U5M-PCB0
K9GAG08U
k9lbg08
K9GAG08
K9HCG08U1M
K9MDG08U5M
samsung k9lbg08u0m
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NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
transistor sr61
NAND08GW3F
NAND16GW3F2A
A20-A32
transistor SR60
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16G nand
Abstract: No abstract text available
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
16-Gbit
16G nand
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Untitled
Abstract: No abstract text available
Text: TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
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TC58BVG2S0HBAI4
TC58BVG2S0HBAI4
2048blocks.
4224-byte
4224-bytes
2013-07-05C
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PDF
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HY27UF084G2B
Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
Text: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
512Mx8bit)
HY27UF084G2B
HY27UF084
hynix nand HY27UF084G2B datasheet
HY27UF(08/16)4G2B Series
hynix nand
hynix nand 4G
hynix nand flash 2gb
HY27UF084G2
hynix nand HY27UF084G2B
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NAND16GW3F4A
Abstract: No abstract text available
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
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64Gbit
Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3D4A
64-Gbit
4224-byte
64Gbit
NAND64GW3D4A
bad block management in mlc nand
JESD97
package tsop48
NUMonyx NAND64G
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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NAND32G
Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
NAND32G
32-Gbit
nand32
NAND32GW3D4A
JESD97
NAND16GW3D2A
package tsop48
16 GBit flash
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32Gbit
Abstract: 16 GBit flash 32G nand flash nand32 NAND32G
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
32Gbit
16 GBit flash
32G nand flash
nand32
NAND32G
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Untitled
Abstract: No abstract text available
Text: TC58BYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
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TC58BYG2S0HBAI4
TC58BYG2S0HBAI4
2048blocks.
4224-byte
4224-bytes
2013-07-05C
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PDF
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Untitled
Abstract: No abstract text available
Text: TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
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TC58BVG2S0HBAI6
TC58BVG2S0HBAI6
2048blocks.
4224-byte
4224-bytes
2013-07-05C
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PDF
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Untitled
Abstract: No abstract text available
Text: TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
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TH58BVG3S0HBAI4
TH58BVG3S0HBAI4
4096blocks.
4224-byte
4224-bytes
2013-09-20C
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PDF
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