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    TC58BYG2S0HBAI6 Search Results

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    TC58BYG2S0HBAI6 Price and Stock

    KIOXIA TC58BYG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58BYG2S0HBAI6 Tray 297 1
    • 1 $5.07
    • 10 $4.501
    • 100 $4.0425
    • 1000 $3.61868
    • 10000 $3.54311
    		Buy Now
    Mouser Electronics TC58BYG2S0HBAI6
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.61
    • 10000 $3.54
    		Get Quote

    TC58BYG2S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58BYG2S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 67VFBGA Original PDF

    TC58BYG2S0HBAI6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.


    Original     		TC58BYG2S0HBAI6 TC58BYG2S0HBAI6 2048blocks. 4224-byte 4224-bytes 2013-07-05C PDF