4218165
Abstract: PD4218165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165L, 4218165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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Original
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PD42S18165L,
4218165L
16-BIT,
4218165L
PD42S18165L
50-pin
42-pin
4218165
PD4218165
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PDF
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NEC 4218165-60
Abstract: 4218165-60 4218165 PD4218165 4218165LE
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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Original
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PD42S18165,
16-BIT,
PD42S18165
50-pin
42-pin
NEC 4218165-60
4218165-60
4218165
PD4218165
4218165LE
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PDF
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4218165
Abstract: PD42S18165 4218165-60 PD4-2S18165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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Original
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PD42S18165,
16-BIT,
PD42S18165
50-pin
42-pin
PD42S18165G5,
4218165
4218165-60
PD4-2S18165
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PDF
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Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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Original
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M10339EJ3V0UM00
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PDF
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hilti te 24
Abstract: hilti te 17 GO 440 104 esm 433 rac
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO
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OCR Scan
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42S18165L
16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L,
4218165L
50-pin
42-pin
1R35-207-3
hilti te 24
hilti te 17
GO 440
104 esm 433 rac
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000F32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The M C -421000F32 is a 1,048,576 words by 32 bits dynam ic RAM m odule on which 2 pieces of 16 M DRAM: iiPD 4218165 are assembled. This m odule provides high density and large quantities of memory in a small space w ithout utilizing the surfacemounting technology on the printed circuit board.
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OCR Scan
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MC-421000F32
32-BIT
-421000F32
MC-421000F32-60
MC-421000F32-70
b427525
M72B-50A46
b427S2S
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PDF
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NEC 4218165-60
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S18165, 4218165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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uPD42S18165
uPD4218165
16-BIT,
PD42S18165,
PD42S18165
50-pin
42-pin
PD42S18165-50,
IPD42S18165-60,
NEC 4218165-60
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PDF
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NEC 4218165-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / / ¿ P D 4 2 S 18 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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OCR Scan
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16-BIT,
uPD42S18165
uPD4218165
42S18165
PD42S18165,
50-pin
42-pin
/iPD42S16165-50,
juPD42S18185-60
/PD42S18165-70,
NEC 4218165-60
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PDF
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D42S18165
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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16-BIT,
uPD42S18165
uPD4218165
/jPD42S18165
/iPD42S18165,
50-pin
42-pin
016lg
PD42S18165,
D42S18165
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUI' //P D 4 2 S 18 16 5 L, 4 2 18 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE D e s c rip tio n The ¿iPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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OCR Scan
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16-BIT,
uPD42S18165L
uPD4218165L
iiPD42S18165L
PD42S18
4218165L
50-pin
42-pin
IR35-207-3
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PDF
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I1244
Abstract: D42S18165 LH 446
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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OCR Scan
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16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L
iiPD42S18165L,
4218165L
50-pin
42-pin
1PD42S18165L-A60,
4218165L-A60
I1244
D42S18165
LH 446
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PDF
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PD42S18165
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT U P D 42S 18165L , 4218165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /xPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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18165L
4218165L
16-BIT,
uPD42S18165L
uPD4218165L
/xPD42S18165L
/xPD42S18165L,
4218165L
50-pin
42-pin
PD42S18165
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PDF
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NEC 4218165-60
Abstract: 4218165
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 42 S 18 16 5 , 4 2 18 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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16-BIT,
PD42S18165,
PD42S18165
50-pin
42-pin
uPD42S18165-50sses
NEC 4218165-60
4218165
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 18 16 5 L, 4 2 18 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S18165L, 4218165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.
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OCR Scan
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16-BIT,
PD42S18165L,
4218165L
PD42S18165L
50-pin
42-pin
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PDF
|
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LM316
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MEC mPD42S18165, 4218165 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynamic RAMs w ith optional hyper page
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OCR Scan
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uPD42S18165
16-BIT,
PD42S18165,
jiPD42S18165,
50-pin
42-pin
HPD42S18165-60,
HPD42S18165-70,
/JPD42S1
S50G5-60-7JF4
LM316
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT / / P D 42 S 18165 L , 4218165 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The jiP D 4 2S 18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
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OCR Scan
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16-BIT,
uPD42S18165L
uPD4218165L
PD42S18165L
iPD42S18165L,
4218165L
50-pin
42-pin
//PD42S18165L-A60,
421B74
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIM IN A RY DATA SH EET MOS INTEGRATED CIRCUIT mPD42S18165L, 4218165L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/W RITE MODE Description The /iPD42S18165L, 4218165L are 1 048576 words by 16 bits CMOS dynam ic RAM s w ith optional hyper page
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OCR Scan
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uPD42S18165L
4218165L
16-BIT,
/iPD42S18165L,
4218165L
50-pin
42-pin
fiPD42S
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PDF
|
b427SES
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT >IEC MPD42S18165,4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /j PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynam ic RAMs w ith optional hyper page
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OCR Scan
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PD42S18165
16-BIT,
PD42S18165,
/iPD42S18165,
50-pin
42-pin
fiPD42S
iPD42S
42S18165
P42LE-400A
b427SES
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD42S18165L, 4218165L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ftPD42S18165L, 4218165L are 1 048 576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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OCR Scan
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juPD42S18165L
4218165L
16-BIT,
ftPD42S18165L,
4218165L
/iPD42S18165L,
50-pin
42-pin
fiPD42S18165L-A70,
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PDF
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NEC 4218165-60
Abstract: PD42S18165-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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uPD42S18165
uPD4218165
16-BIT,
luPD42S18165
/rPD42S18165
42S18165.
50-pin
42-pin
PP42S18165,
IR35-207-3
NEC 4218165-60
PD42S18165-60
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PDF
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PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
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OCR Scan
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M10339EJ3V0UM00
PJ 1169
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PDF
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1000FA
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-421000FA64 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-421000FA64 is a 1,048,576 words by 64 bits dynamic RAM module on which 4 pieces of 16 M DRAM: /4218165 are assembled.
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OCR Scan
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MC-421000FA64
64-BIT
MC-421000FA64
1000FA
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PDF
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IPD42S18165-60
Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode
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OCR Scan
|
16-BIT,
uPD42S18165
uPD4218165
fiPD42S18165
PD42S18165,
50-pin
42-pin
iPD42S18165-60,
PD42S18165-70,
043lg
IPD42S18165-60
tfk 014
PD42S18165
HV Tr 3
TFK 227
PD4218165
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PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-421000FA64 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The M C -4 21000FA64 is a 1,048,576 words by 64 bits dynam ic RAM m odule on w hich 4 pieces of 16 M DRAM: ¿/4218165 are assembled.
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OCR Scan
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MC-421000FA64
64-BIT
MC-421000FA64
uPD4218165
bM2752S
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PDF
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