Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: ^PD42S18160L are assembled.

4218160-60

Abstract: 4218160 IC-3217 4218160G5 UPD42S18160LE-60 PD42S18160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

hilti te 24

Abstract: hilti te 17 GO 440 104 esm 433 rac
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

4218165

Abstract: PD42S18165 4218165-60 PD4-2S18165
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

4218160-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /IPD42S 1 8 1 6 0 ,4218160 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynam ic RAMs. The fast page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode

M1314

Abstract: PD42S18160 4218160LE-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s

b427SES

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT >IEC PD42S18165,4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /j PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynam ic RAMs w ith optional hyper page

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /PD42S18160L are assembled.

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

upb426c

Contextual Info: O 1- ' mPB406/406-1/406-2 mPB426/426-1/426-2 NEC NEC Electronics US.A. Ina 1024 W ORD B Y 4-BIT 4096-BIT BIPOLAR T T L PROM M icrocom puter Division i\à " it D escrip tio n ^ The/U.PB406 and /xPB 426 are high-speed, electrically pro­ gram m able, fully decoded 4096-bit T T L read-only m em o­

8080AF

Abstract: UPD8080A 4218160 UPD8080AF A10C UPD8080AF-1 PD8080AF UPD8080AF-2
Contextual Info: /¿PD8080AF mPD8080AF-2 ^fiPD8080AF-1 NEC NEC Electronics U.S.A. Inc. Microcomputer Division /XPD8080AF 8-BIT N-CHANNEL MICROPROCESSOR FAMILY DESCRIPTION T h e / jP D 8 0 8 0 A F is a c o m p le te 8 -b it p aralle l processor fo r use in general purpose d ig ita l c o m p u te r system s. I t is fa b ric a te d on a single LS I c h ip using N -c h a n n e l silicon

UPD5101L

Abstract: 5101L PD5101L PD5101 d5101l 5101L-1
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m P D 51 o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

nec 444 ram

Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there­

mPB8224

Abstract: B8224 4218160 8224d upb8224 ESI 0018 PD42S18160 pb8228 MPB8224C
Contextual Info: NEC vvjiPB8224 NEC Electronics USA. Inc. Microcomputer Division CLOCK GENERATOR AND DRIVER FOR 8080A PRO CESSO RS DESCRIPTION The jP B8224 is a single chip clock generator and driver fo r 8080A processors. The clock frequency is determined by a user specified crystal and is capable of

drc Rotary encoder

Abstract: UPC157C
Contextual Info: Preliminary Application Note TM V850E/MS1 32-/16-Bit Single-Chip Microcontrollers Hardware PPD703100 PPD703101 PPD703102 PPD70F3102 Document No. U14214EJ1V0AN00 1st edition Date Published August 1999 N CP(K) Printed in Japan 1999 [MEMO] 2 Preliminary Application Note U14214EJ1V0AN00

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features