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    4211 NPN Search Results

    4211 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    4211 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4211 npn

    Abstract: TO220-7 package 4211 P-TO220-7-1 GPT05108 Q67000-A8118 TLE4211
    Text: Intelligent Double Low-Side Switch 2 x 2 A TLE 4211 Bipolar IC Features ● ● ● ● ● ● ● ● ● Double low-side switch, 2 x 2 A Power limitation Overtemperature shutdown Status monitoring Shorted-load protection Reverse polarity protection Integrated clamp Z-Diodes


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    PDF P-TO220-7-1 Q67000-A8118 GPT05108 4211 npn TO220-7 package 4211 P-TO220-7-1 GPT05108 Q67000-A8118 TLE4211

    transistor k 4213

    Abstract: k 4213 4213 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216
    Text: Composite Transistors UP04210/4211/4213/4214/4215/4216 Silicon NPN epitaxial planar transistor 4 • Features 1 5˚ 2 3 0.50 (0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


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    PDF UP04210/4211/4213/4214/4215/4216 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216 transistor k 4213 k 4213 4213 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    TLE 4214 dip-8

    Abstract: tle 4214 TLE 4214 8 pin TO220-7 package 4211 npn smd z5 transistor Q67000-A8118 Q67000-A9062 Q67000-A9094 Q67000-A9108
    Text: TLE 4211 Intelligent Double Low-Side Switch 2 x 2 A Bipolar IC Features ● ● ● ● ● ● ● ● ● Double low-side switch, 2 x 2 A Power limitation Overtemperature shutdown Status monitoring Shorted-load protection Reverse polarity protection Integrated clamp Z-Diodes


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    PDF P-TO220-7-1 Q67000-A8118 TLE 4214 dip-8 tle 4214 TLE 4214 8 pin TO220-7 package 4211 npn smd z5 transistor Q67000-A8118 Q67000-A9062 Q67000-A9094 Q67000-A9108

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


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    Untitled

    Abstract: No abstract text available
    Text: Pow er Transistor A rrays PU3211, PU 4211, PU4511 PU3211, PU4211, PU4511 Package Dimensions PU3211 Silicon NPN Epitaxial Planar Type 20.5 ma x. = I E o E Power Amplifier, Switching Complementary Pair with PU3111, PU4111, PU4411 oo 0.8±0.25j 1 1 40 -0 5 + 0.15


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    PDF PU3211, PU4511 PU4211, PU3211 PU3111, PU4111, PU4411 PU3211:

    l738

    Abstract: No abstract text available
    Text: SIEMENS Intelligent Double Low-Side Switch 2 x TLE 4211 2A Bipolar IC Features • Double low-side switch, 2 x 2 A • Power limitation • Overtemperature shutdown • Status monitoring VPT05108 • Shorted-load protection • Reverse polarity protection


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    PDF VPT05108 P-T0220-7-1 Q67000-A8118 clamp211 AET00202 220nF AEA002C5 AED00220 AED00221 l738

    Untitled

    Abstract: No abstract text available
    Text: SI EMENS Intelligent Double Low-Side Switch 2 x 2 A TLE 4211 B ipolar IC Features • • • • • • • • • Double low-side switch, 2 x 2 A Power limitation Overtemperature shutdown Status monitoring Shorted-load protection Reverse polarity protection


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    PDF Q67000-A8118 P-T0220-7-1

    fu06

    Abstract: TLE4211
    Text: SIEMENS Intelligent Double Low-Side Switch 2 x 2A TLE 4211 Bipolar IC Features • • • • • • • • • Double low-side switch, 2 x 2 A Power limitation Overtemperature shutdown Status monitoring Shorted-load protection Reverse polarity protection


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    PDF Q67000-A8118 P-T0220-7-1 TLE4211 fu06 TLE4211

    TRANSISTOR SMD DK QC

    Abstract: SMD DK QC Wiring Diagram siemens t05 package transistor pin configuration transistor SMD t05 2S74 AED00219 AET0020Z Q67000-A8118 ks SIEMENS
    Text: SIEM ENS Intelligent Double Low-Side Switch 2 x 2 A TLE 4211 Bipolar IC Features • • • • • • • • • Double low-side switch, 2 x 2 A Power limitation Overtemperature shutdown Status monitoring Shorted-load protection Reverse polarity protection


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    PDF Q67000-A8118 P-T0220-7-1 voltage50 aaa5b05 0235bGS 00S2SÃ TRANSISTOR SMD DK QC SMD DK QC Wiring Diagram siemens t05 package transistor pin configuration transistor SMD t05 2S74 AED00219 AET0020Z ks SIEMENS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Intelligent Double Low-Side Switch 2 x 2 A TLE 4211 B ip o la r IC F eatures • D ouble low -side sw itch, 2 x 2 A • Pow er lim itation • O ve rte m p e ra tu re shutdow n • S tatus m onitoring • S h o rted -lo a d protection • R everse p o la rity protection


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    PDF VPT05108 AEA00205 0C220

    PU3211

    Abstract: PU3111 PU4111 PU4211 PU4411 PU4511
    Text: Power Transistor Arrays P U 3 2 1 1 , P U 4 2 1 PU3211, PU4211, PU4511 , 1 Package Dim ensions P 1 1 4 5 1 1 Unit! mm PU3211 Silicon NPN Epitaxial Planar Type 4.2max.> 20.5 max. £ o Power Amplifier, Switching Complementary Pair with P U 3.111, PU41 l i , P U 4 4 1 1


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    PDF PU3211, PU4211, PU4511 PU3111, PU4111, PU4411 PU3211: PU3211 PU3111 PU4111 PU4211 PU4411 PU4511

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PU3214, PU4214, PU4514 Silicon NPN Epitaxial Planar Type PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m 4.2max. 20.5max. I-h - n E o Power Amplifier, Switching Complementary Pair with PU3114, PU4114, PU4414 0.8+0.25IF


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    PDF PU3214, PU4214, PU4514 PU3214 PU3114, PU4114, PU4414

    tesla potentiometer

    Abstract: sy320 service Tesla B 100 TESLA AM -piezofilter say 30 t197 transistoren von tesla service-mitteilungen sy 200
    Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K U N D F E R N S E H E N ¡ B f t j |r a d i o JANUAR «fl SEITE 1976 1 1-6 -teievision 1 MITTEILUNG AUS DSM VEB STERN-RADIO SONNEBERG KOMBINAT STERN-RADIO BERLIN nach den gültigen Unterlagen


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    PDF 211/BC tesla potentiometer sy320 service Tesla B 100 TESLA AM -piezofilter say 30 t197 transistoren von tesla service-mitteilungen sy 200

    2n3055

    Abstract: 2N3238 2N4211 2N3667 2N3055 TO-3 2N3235 2N3236 2N3239 2N3240 2N5412
    Text: E L E C T R O N IC S , IN C . COLLECTOR CURRENT = V C E O s u s V o lts D e v ic e N o C áse v CBO V o lts 2N 3055 JA N 2N 3055 JT X 2N 3055 2N 3235 2N 3236 2N 3238 2N 3239 2N 3240 2N 3667 2N 5412 2N 5881 2N 5882 2N 6253 2N 6254 2N 6470 2N6471 2N 6472


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N4211 2N3055 TO-3

    2N1050A

    Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
    Text: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A


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    PDF 000D12S MIL-S-l9500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1050A T 3036 2n1048 2N1049

    M5207L05

    Abstract: M5207L01/M5207L05
    Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5 2 0 7 L is a variable gm-type VCA Voltage Control Amplifier IC designed for linear controlled electronic volume control. The IC offers capability of controlling each channel


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    PDF M5207L01 /M5207L05 M5207L01 M5207L05 M5207L05 M5207L01/M5207L05

    M5207L01

    Abstract: transistor M152 5207L05 5207L01 transistor KT 209 M MITSUBISHI GATE ARRAY m5241 M5207L MS207L01 M5207L05
    Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5207L is a variable gm-type VCA Voltage Control Am plifier IC designed fo r linear controlled electronic volume control. The IC o ffe rs capability o f controlling each channel


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    PDF M5207L01 /M5207L05 5207L M5207L01 5207L05 transistor M152 5207L05 5207L01 transistor KT 209 M MITSUBISHI GATE ARRAY m5241 M5207L MS207L01 M5207L05

    MA164

    Abstract: MA373 7400 fan-in MA154 T-42-11-05
    Text: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays


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    PDF 7----T-42-U-05 50L15/35L12 50L15/35L12 MA167 MA170 MA183 CA94039 MA164 MA373 7400 fan-in MA154 T-42-11-05

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


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    PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204

    2n1478

    Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150


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    PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2n1478 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886

    Untitled

    Abstract: No abstract text available
    Text: X T L i n C A LT1186 B T E C H N O LO G Y D A C P ro g r a m m a b le C C F L S w itc h in g R e g u la to r Bits-to-Nits F€OTUR€S • Wide Battery Input Range: 4.5V to 30V ■ Grounded Lamp or Floating Lamp Configurations ■ Open Lamp Protection


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    PDF LT1186 63kHz, LT1172 100kHz LT1173 24kHz, LT1182 200kHz LT1183

    LT 543 common cathode

    Abstract: Royer oscillator circuit diagram Royer oscillator overload Royer converter Royer oscillator royer converter application note TO-250AA LT 543 IC pin diagram royer 103 chip resistor Rohm
    Text: X T L i n e A LT1186 B TECHNOLOGY D A C Prog ram m ab le C C FL Sw itching Regulator Bits-to-Nits FcnTuncs • ■ ■ ■ ■ ■ Wide Battery Input Range: 4.5V to 30V Grounded Lamp or Floating Lamp Configurations Open Lamp Protection Precision 50|jA Full-Scale DAC Programming Current


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    PDF 50jjA LT1107 63kHz, LT1172 100kHz LT1173 24kHz, LT1182 200kHz LT1183 LT 543 common cathode Royer oscillator circuit diagram Royer oscillator overload Royer converter Royer oscillator royer converter application note TO-250AA LT 543 IC pin diagram royer 103 chip resistor Rohm

    n4448

    Abstract: 1N4448F
    Text: ERICSSON ^ October 1998 PBL 386 40/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 40/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.


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    PDF 2x900 1522-PBL S-164 n4448 1N4448F