Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K 41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de
|
OCR Scan
|
DDlSb30
KM41C4002B
41C4002B
41C4002B-6
110ns
41C4002B-7
130ns
41C4002B-8
150ns
R55-only
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
|
OCR Scan
|
KM41C4002A
130ns
150ns
100ns
180ns
18-LEAD
20-LEAD
|
PDF
|
samsung pram
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K 41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
|
OCR Scan
|
KM41C4002
150ns
100ns
180ns
GD10203
T-46-23-15
20-LEAD
samsung pram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: • - • • • • • • • • • • tRAC tCAC tRC K M 4 1C4002- 8 [ 80ns 20ns 1 50ns KM 41C 4002-10 ' 100ns 25ns
|
OCR Scan
|
KM41C4002
200ns
20-LEAD
|
PDF
|
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
|
OCR Scan
|
41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications
|
OCR Scan
|
M41C4002
100ns
150ns
180ns
41C4002
KM41C4002
20-LEAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 2 is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. Its design is optimized for high perform ance applications
|
OCR Scan
|
KM41C4002
41C4002-
150ns
20-LEAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCAC tR C 41C4002C-5 50ns 13ns 90ns 41C4002C-6 60ns 15ns 110ns 41C4002C-7 70ns 20ns 130ns 41C4002C-8 80ns 20ns 150ns
|
OCR Scan
|
KM41C4002C
KM41C4002C-5
KM41C4002C-6
110ns
KM41C4002C-7
130ns
KM41C4002C-8
150ns
cycles/16ms
KM41C4002C
|
PDF
|
c4002c
Abstract: No abstract text available
Text: 41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 1 bit S ta tic C o lu m n M o d e C M O S D R A M s . S ta tic C o lu m n M o d e o ffe rs high s p e e d ra n d o m o r s e q u e n tia l a c c e s s o f m e m o ry c e lls w ith in th e s a m e ro w . A c c e s s tim e -5 , -6, -7 o r -8 an d
|
OCR Scan
|
KM41C4002C
Q0E01LL
c4002c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4002A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
|
OCR Scan
|
KM41C4002A
41C4002A
20-LEAD
|
PDF
|
41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
|
OCR Scan
|
KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C 4002A is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
|
OCR Scan
|
KM41C4002A
130ns
100ns
180ns
18-LEAD
20-LEAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 41C4002A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4002A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
|
OCR Scan
|
KM41C4002A
100ns
130ns
150ns
180ns
41C4002A
18-LEAD
20-LEAD
|
PDF
|